Split gate flash memory unit and making method thereof
A flash memory cell and manufacturing method technology, applied in the field of semiconductor technology, can solve the problems of device miniaturization limitation, high programming voltage of split-gate flash memory cells, etc., and achieve the effects of low power consumption, overcoming short channel effect, and low programming voltage
Active Publication Date: 2012-07-18
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
[0005] However, the programming voltage of existing split-gate flash memory cells is relatively high, and the miniaturization of devices is limited
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[0033] It can be seen from the background art that the programming voltage of the existing split-gate flash memory cell is relatively high, and the miniaturization of the device is limited. The inventors of the present invention found that the existing split-gate flash memory unit uses polysilicon as the storage medium, which uses the same polysilicon as the general gate, so it can be well compatible with the traditional process, but due to its conductivity, in order to ensure The data retention of the storage device must ensure that there are no oxide defects, so the thickness of the tunneling layer cannot be further thinned (generally greater than 70 angstroms), which is not conducive to the reduction of the operating voltage, resulting in limited device size reduction . After further research, the inventor provides a split-gate flash memory unit and a manufacturing method thereof in the present invention.
[0034] figure 2 It is a schematic flow chart of the method for m...
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The invention relates to a making method of a split gate flash memory unit, which comprises the following steps of: providing a substrate, wherein the substrate comprises at least two first zones and a second zone positioned between the first zones, and a tunneling layer, a nano crystal layer, a barrier layer and a control gate are formed on the surface of each first zone substrate; forming a groove in a second zone substrate; forming an isolated dielectric layer on the surface of the groove, and forming a word line filled in the groove, wherein the thickness of the word line is greater than the depth of the groove; and forming a source zone and a drain zone on both sides where the control gate and the word line are opposite. Accordingly, the invention also provides the split gate flash memory unit formed by the method. The split gate flash memory unit and the making method of the split gate flash memory unit in the invention adopt localization separated charges for storing data so as to be beneficial to realizing the miniaturization of devices. Furthermore, the split gate flash memory unit and the making method of the split gate flash memory unit in the invention can reduce programming voltage, reduce power consumption and overcome a short channeling effect.
Description
technical field [0001] The invention relates to the field of semiconductor technology, in particular to a split-gate flash memory unit and a manufacturing method thereof. Background technique [0002] In the current semiconductor industry, integrated circuit products can be mainly divided into three types: analog circuits, digital circuits and digital / analog hybrid circuits, among which storage devices are an important type of digital circuits. Among storage devices, the development of flash memory (flash memory for short) is particularly rapid in recent years. The main feature of flash memory is that it can keep stored information for a long time without power on; and it has the advantages of high integration, fast access speed, easy erasing and rewriting, etc., so it has been widely used in many fields such as microcomputer and automatic control. a wide range of applications. [0003] The standard physical structure of flash memory is called a flash cell (bit). The stru...
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IPC IPC(8): H01L21/8247H01L27/115H01L29/49H01L29/06H01L29/10G11C16/04H10B69/00
Inventor 曹子贵
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP