Nano stamping photoresist surface modifier

A surface modifier and nano-imprint technology, which is applied in the direction of photosensitive materials and coatings for opto-mechanical equipment, can solve the problem of reducing the adhesion of photoresist to the substrate, high surface energy, and difficult demolding and other problems to achieve the effect of expanding the range of imprintable materials, increasing the yield of imprinting, and increasing the scope of application

Active Publication Date: 2012-07-25
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Pure organic materials have good adhesion to the substrate, but the surface energy is high, and it is difficult to release the mold after imprinting, which will cause a high defect rate of the imprinted image and easily damage the template; using silicone materials instead of pure organic materials can achieve better Good release effect, however, silicone materials will generate solid silica particles under oxygen sweeping, and the silicone host material reduces the adhesion to photoresist and silicon wafer while reducing the upper surface tension ; As a photoresist material, fluoropolymer can reduce the surface tension of photoresist better, but it will cause a decrease in the etching selectivity of photoresist, and also reduce the adhesion of photoresist to the substrate
At the same time, in order to meet the film formation and adhesion to the substrate, the use of silicone or fluoropolymer-based photoresist materials can only reduce the surface energy to a large value, which is difficult for large-area high-resolution structures. Difficult to get a satisfactory demoulding effect

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Weigh 35g of methyl ethyl ketone, 40g of cyclohexanone, 5g of diacetone alcohol, 18g of perfluoroacrylate, 1.5g of fatty alcohol polyoxyethylene ether, 2,2-diethoxyacetophenone, 1-hydroxycyclohexylstyrene 0.3 g of a mixture of ketone, p-cymenyl-2-hydroxydimethylacetone-1, benzophenone and 2-thioxanthone chloride, and 0.2 g of a mixture of benzophenone and benzotriazole. Add the above-mentioned substances into a beaker in turn, heat and stir, stabilize at 30-40°C for half an hour, and filter through a filter with a pore size of 0.2μm to obtain the surface treatment agent. The above operations are all carried out under dark conditions.

Embodiment 2

[0029] Weigh respectively ethyl lactate 50g, ethylene glycol ether 20g, perfluoroacrylate 12g, perfluoroepoxy resin 17g, polyoxyethylene alkylamine 2.0g, 2,4 dimethylthioxanthone, 9, 0.5 g of 10-phenanthrenequinone and dimethylammonia-p-oxazetidinone mixture, 0.5 g of benzotriazole, aromatic salicylate and benzoate mixture. Put several substances into the beaker in turn, heat and stir, stabilize at 30-40°C for half an hour, and filter through a 0.2μm pore size filter to obtain the surface treatment agent. The above operations are all carried out under dark conditions.

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PUM

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Abstract

The invention relates to a nano stamping photoresist surface modifier and belongs to the technical field of photoresist materials of a semiconductor manufacturing technology. The surface modifier comprises the following components in percentage by weight: 65-85% of organic micromolecule solvent, 10-30% of full fluorine UV (ultraviolet) curing resin, 0.5-5% of surfactant, 0.1-0.5% of photo-initiator and 0.1-0.5% of stabilizer. According to the proportion, the components are placed into a container in turn, the components are heated and uniformly stirred, the mixture is stabilized for half a hour at 30-40 DEG C, and the stabilized mixture is filtered by a filter with the aperture of 0.2Mum, so as to obtain a surface treating agent. The surface treating agent is sprayed on a stamping photoresist surface so as to be used as the surface treating agent. The surface treating agent can be used for effectively reducing the surface energy of a photoresist, so as to smoothly demould, reduce the defects and protect a template.

Description

technical field [0001] The invention relates to a nano-imprint photoresist surface modifier, which belongs to the field of semiconductor manufacturing technology photoresist materials. Background technique [0002] Nanoimprint lithography is a new lithography technology, which is considered to be the next-generation lithography technology that may be used in the manufacture of large-scale integrated circuits due to its high-resolution and low-cost characteristics. As the key material of nanoimprint lithography technology, nanoimprint photoresist has been widely studied because its performance directly affects the resolution, fidelity, defect rate and etching selectivity of the pattern transfer process. . At this stage, there are mainly two types of photoresist for thermal embossing and UV nanoimprinting photoresist. Since this technology uses a mechanical contact lithography method, demoulding after imprinting is a key problem it faces. [0003] After searching the existin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D4/02G03F7/11
Inventor 张剑平赵彬王金合任鑫施利毅
Owner SHANGHAI UNIV
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