Method for preparing organic thin-film solar cells
A technology of solar cells and organic thin films, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of difficult product shape, uneven thickness, waste of raw materials, etc., to improve energy conversion efficiency, improve energy conversion efficiency, and improve effective The effect of transmission
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Embodiment 1
[0023] Step 1, on the substrate that has been treated, a mixed aqueous solution of poly(3,4-ethylenedioxythiophene) and poly(styrenesulfonate) with a concentration of 0.3% is brushed, wherein poly(3,4- The mass ratio of ethylene dioxythiophene) and poly(styrene sulfonate) is 1:1.6. Brushing rate 0.5cm / s, 80 o Bake at C for 1 hour to obtain a hole transport layer with a thickness of 30 nm.
[0024] Step 2, poly(3-hexylthiophene) (P3HT), one of the polythiophene derivatives, and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), one of the fullerene derivatives, were : 0.8 ratio mixed to prepare a concentration of 5mg / ml chloroform solution. Brush the mixed solution of P3HT and PCBM prepared above on the conductive substrate covered with the hole transport layer, the brushing rate is 0.5cm / s, dry under an inert atmosphere, remove excess chloroform, and obtain a 60nm thick power generation layer film .
[0025] Step 3, put the above-mentioned substrate into a vacuum sputterin...
Embodiment 2
[0028] Step 1, on the substrate that has been treated, a mixed aqueous solution of poly(3,4-ethylenedioxythiophene) and poly(styrenesulfonate) with a concentration of 0.8% is brushed, wherein poly(3,4- The mass ratio of ethylene dioxythiophene) and poly(styrene sulfonate) is 1:1.6. Brushing rate 0.5cm / s, 90 o Bake at C for 1 hour to obtain a hole transport layer with a thickness of 35 nm.
[0029] Step 2, poly(3-hexylthiophene) (P3HT), one of the polythiophene derivatives, and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), one of the fullerene derivatives, were : 0.9 ratio mixed to prepare a concentration of 8mg / ml chloroform solution. Brush the mixed solution of P3HT and PCBM prepared above on the conductive substrate covered with the hole transport layer, the brushing speed is 0.5cm / s, and it is heated to 60°C under an inert atmosphere. o C, removing excess chloroform to obtain an 80nm thick power generation layer film.
[0030] Step 3, put the above-mentioned substr...
Embodiment 3
[0033] Step 1, on the substrate that has been treated, a mixed aqueous solution of poly(3,4-ethylenedioxythiophene) and poly(styrenesulfonate) with a concentration of 1.0% is brushed, wherein poly(3,4- The mass ratio of ethylene dioxythiophene) and poly(styrene sulfonate) is 1:1.6. Brushing rate 1cm / s 100 o Bake at C for half an hour to obtain a hole transport layer with a thickness of 50 nm.
[0034] Step 2, poly(3-hexylthiophene) (P3HT), one of the polythiophene derivatives, and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), one of the fullerene derivatives, were : 1 ratio to prepare a chloroform solution with a concentration of 10mg / ml. Brush the mixed solution of P3HT and PCBM prepared above on the conductive substrate covered with the hole transport layer, the brushing speed is 1cm / s, and it is heated to 60°C under an inert atmosphere. o C, removing excess chloroform to obtain a 100nm thick power generation layer film.
[0035] Step 3, put the above-mentioned subs...
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