CVD (Chemical Vapor Deposition) SiC/SiO2 gradient antioxidant composite coating and preparation method thereof
A composite coating and gradient coating technology, applied in coatings, metal material coating processes, gaseous chemical plating, etc., can solve the problem of not providing long-term anti-oxidation protection, slow SiC oxidation rate, and inability to form oxygen barrier films and other problems, to achieve good controllability and designability, excellent anti-oxidation performance, and low stress.
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Embodiment 1
[0036] SiC / SiC~SiO 2 / SiO 2 Preparation of composite coating
[0037] After the graphite substrate was polished with No. 600 SiC sandpaper, it was cleaned with distilled water and absolute ethanol in sequence, and then dried in an oven at 100°C for 12 hours before use.
[0038] (1) Preparation of SiC coating
[0039] Place the surface-treated graphite substrate in a chemical vapor deposition furnace with CH 3 SiCl 3 -H 2 -Ar system preparation, where CH 3 SiCl 3 (MTS) is the Si source, the water bath is kept at a constant temperature of 30-35°C, and the 2 Bubble the carrier gas into the CVD furnace. The deposition temperature is 1100° C., the deposition pressure is 700 Pa, and the deposition time is 1 h.
[0040] (2)SiC~SiO 2 Coating Preparation
[0041] Maintain process parameter and process condition in step (1), pass into carbon dioxide gas, keep CO 2 / H 2 The flow ratio is 0.47, the deposition time is 10h, and SiC~SiO is prepared by deposition 2 coating.
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Embodiment 2
[0047] SiC / SiC-SiO 2 / SiO 2 Preparation of composite coating
[0048] After the base material was polished with No. 600 SiC sandpaper, it was ultrasonically cleaned with distilled water and absolute ethanol in turn, and then dried in an oven at 100°C for 12 hours before use.
[0049] (1) Preparation of SiC coating
[0050] Place the surface-treated substrate material in a chemical vapor deposition furnace with CH 3 SiCl 3 -H 2 -Ar system preparation, where CH 3 SiCl 3 (MTS) is the Si source, the water bath maintains a constant temperature of 34.5 ° C, and the H 2 Bubble the carrier gas into the CVD furnace. The deposition temperature is 900° C., the deposition pressure is 10 kPa, and the deposition time is 10 h.
[0051] (2) SiC-SiO 2 Coating preparation
[0052] Keep process parameters and process conditions in step (1), feed carbon dioxide gas, and gradually CO 2 / H 2 The flow ratio was increased from 0.32 to 1.28, the deposition time was 10h, and SiC-SiO was pr...
Embodiment 3
[0057] SiC / SiC-SiO 2 / SiC~SiO 2 / SiC-SiO 2 / SiO 2 Preparation of composite coating
[0058] After the base material was polished with No. 600 SiC sandpaper, it was ultrasonically cleaned with distilled water and absolute ethanol in turn, and then dried in an oven at 100°C for 12 hours before use.
[0059] (1) Preparation of SiC coating
[0060] Place the surface-treated substrate material in a chemical vapor deposition furnace with CH 3 SiCl 3 -H 2 Ar system preparation, where CH 3 SiCl 3 (MTS) is the Si source, the water bath maintains a constant temperature of 30.5 ° C, and the H 2 Bubble the carrier gas into the CVD furnace. The deposition temperature is 1300° C., the deposition pressure is 700 Pa, and the deposition time is 4 hours.
[0061] (2) SiC-SiO 2 Coating Preparation
[0062] Keep process parameters and process conditions in step (1), feed carbon dioxide gas, and gradually CO 2 / H 2 The flow ratio was changed from 1.28 to 0.32, the deposition time wa...
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