CVD (Chemical Vapor Deposition) SiC/SiO2 gradient antioxidant composite coating and preparation method thereof
A composite coating and gradient coating technology, applied in coatings, metal material coating processes, gaseous chemical plating, etc., can solve the problem of not providing long-term anti-oxidation protection, slow SiC oxidation rate, and inability to form oxygen barrier films and other problems, to achieve good controllability and designability, excellent anti-oxidation performance, and low stress.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0036] SiC / SiC~SiO 2 / SiO 2 Preparation of composite coating
[0037] After the graphite substrate was polished with No. 600 SiC sandpaper, it was cleaned with distilled water and absolute ethanol in sequence, and then dried in an oven at 100°C for 12 hours before use.
[0038] (1) Preparation of SiC coating
[0039] Place the surface-treated graphite substrate in a chemical vapor deposition furnace with CH 3 SiCl 3 -H 2 -Ar system preparation, where CH 3 SiCl 3 (MTS) is the Si source, the water bath maintains a constant temperature of 30-35 °C, and the H 2 Bubble the carrier gas into the CVD furnace. The deposition temperature is 1100° C., the deposition pressure is 700 Pa, and the deposition time is 1 h.
[0040] (2) SiC~SiO 2 Coating preparation
[0041] Keep the process parameters and process conditions in step (1), feed carbon dioxide gas, and keep the CO 2 / H 2 The flow ratio is 0.47, the deposition time is 10h, and SiC~SiO is prepared by deposition 2 coati...
Embodiment 2
[0047] SiC / SiC-SiO 2 / SiO 2 Preparation of composite coating
[0048] After the base material was polished with No. 600 SiC sandpaper, it was ultrasonically cleaned with distilled water and absolute ethanol in turn, and then dried in an oven at 100°C for 12 hours before use.
[0049] (1) Preparation of SiC coating
[0050] Place the surface-treated substrate material in a chemical vapor deposition furnace with CH 3 SiCl 3 -H 2 -Ar system preparation, where CH 3 SiCl 3 (MTS) was the Si source, the water bath was kept at a constant temperature of 34.5 °C, and the H 2 Bubble the carrier gas into the CVD furnace. The deposition temperature is 900°C, the deposition pressure is 10kPa, and the deposition time is 10h.
[0051] (2) SiC-SiO 2 Coating Preparation
[0052] Keep the process parameters and process conditions in step (1), feed carbon dioxide gas, and gradually reduce the CO 2 / H 2 The flow ratio was increased from 0.32 to 1.28, the deposition time was 10h, and S...
Embodiment 3
[0057] SiC / SiC-SiO 2 / SiC~SiO 2 / SiC-SiO 2 / SiO 2 Preparation of composite coating
[0058] After the base material was polished with No. 600 SiC sandpaper, it was ultrasonically cleaned with distilled water and absolute ethanol in turn, and then dried in an oven at 100°C for 12 hours before use.
[0059] (1) Preparation of SiC coating
[0060] Place the surface-treated substrate material in a chemical vapor deposition furnace with CH 3 SiCl 3 -H 2 -Ar system preparation, where CH 3 SiCl 3 (MTS) was the Si source, the water bath was kept at a constant temperature of 30.5 °C, and the H 2 Bubble the carrier gas into the CVD furnace. The deposition temperature is 1300° C., the deposition pressure is 700 Pa, and the deposition time is 4 hours.
[0061] (2) SiC-SiO 2 Coating Preparation
[0062] Keep the process parameters and process conditions in step (1), feed carbon dioxide gas, and gradually reduce the CO 2 / H 2 The flow ratio was changed from 1.28 to 0.32, the ...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com