Deposition method of salicide bolck film

Abstract

The invention relates to a deposition method of a salicide bolck (SAB) film, comprising the following steps: providing a substrate; depositing a silica film on the substrate with a sub atmosphere chemical vapor deposition method; performing ultraviolet irradiation to the silica film formed by deposition; and taking out the substrate. According to the deposition method of the metal silicide barrier layer film provided by the invention, residual Si-H bonds in the film are removed to enhance performance of the film; hydrogen content of the film is lower; film density is higher; quality of the film is better; and crafting windows of subsequent SAB etching are increased.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a method for depositing a metal silicide barrier film. Background technique [0002] Sub Atmospheric Chemical Vapor Deposition (SACVD) is a widely used chemical vapor deposition technology, which uses ozone and tetraethylsilane (TEOS) as the reaction starting gas. Under certain temperature conditions, the thermal chemical reaction is usually carried out at 300-500 ° C. Since the reaction pressure is generally 50-600 torr, which is slightly lower than atmospheric pressure, it is called sub-atmospheric chemical vapor deposition. [0003] During the reaction process, SACVD does not need to use plasma to dissociate the reaction gas, but to generate silicon dioxide through the reaction of active oxygen atoms in ozone and silicon in TEOS. Therefore, the silicon dioxide film prepared by the SACVD method has no plasma-induced damage (Plasma Induced Damage, PID) to the substrate...

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Problems solved by technology

[0005] However, due to the low temperature of SACVD relative to the thermal oxygen reaction of the furnace tube during the deposition process and the lack of plasma bombardment, the film will contain a certain amount of H, the quality of the film is relatively poor, and the wet etching rate is fast

When the film is etched in the subsequent SAB dry and wet methods, it is relatively difficult to control

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