Method for preparing gradient transition layer between hard film and substrate
A gradient transition and matrix technology, applied in coatings, metal material coating processes, ion implantation plating, etc., can solve the problems of deposition, target poisoning and sputtering rate reduction, unfavorable compounds, namely transition layer deposition, etc. The effect of uniform and dense, improving the bonding force and bearing capacity
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Embodiment 1
[0015] see figure 1 The preparation of the gradient transition layer between the hard film and the substrate adopts a deposition method combining sputtering, reactive sputtering and radio frequency or microwave chemical vapor deposition. The deposition equipment used includes at least one or two or more graphite targets and One or two or more metal targets, including at least one metal target and one graphite target; use radio frequency or DC sputtering power supply; metal targets are chromium, titanium, copper, aluminum, manganese, tungsten, molybdenum, iron, silicon , zinc, magnesium, tin, nickel, cobalt, indium, germanium, and gallium, or an alloy containing several of these elements, when two or more metal targets are used, the same or different targets can be used; sputtering The sputtering gas is argon or helium; the substrate is connected to a radio frequency or microwave power supply through the sample stage, and the radio frequency or microwave power is applied to the...
Embodiment 2
[0017] This embodiment is basically the same as Embodiment 1, and the special features are as follows:
[0018] When depositing a metal layer or a compound layer, radio frequency or microwave power is applied to the substrate; the hard film layer above the gradient transition layer is prepared by combining sputtering with radio frequency chemical vapor deposition or microwave chemical vapor deposition when depositing a gradient transition layer The multi-power source method, or any other commonly used thin film deposition method.
[0019] When depositing the metal layer or compound layer, the radio frequency or microwave power is applied continuously, or intermittently or partially.
[0020] The reactive gases that can be introduced during the deposition of the compound layer include organic compounds with a saturated vapor pressure above 0.1Pa at room temperature, compounds containing nitrogen, silicon, boron, phosphorus, sulfur, halogen, oxygen, and one or both of nitrogen ...
Embodiment 3
[0022] In this embodiment, it is a specific gradient transition layer preparation method, see figure 1 , the concrete steps of preparation are as follows:
[0023] 1) After vacuuming the equipment, introduce argon sputtering gas with a gas flow of about 20sscm. Turn on the radio frequency power supply (9), adjust the current to 0.15A, the voltage to 950V, and the self-bias to 420V to remove pollutants and oxide layers on the surface of the substrate.
[0024] 2) After 10 minutes, turn on the sputtering power supply (2), adjust the current to 0.3A, and the voltage to 430V to remove pollutants and oxide layers on the surface of the metal target.
[0025] 3) After 5 minutes, open the baffle of the metal target (1).
[0026] 4) After 5 minutes, turn on the sputtering power supply (4) and adjust the power to 80W to remove pollutants on the surface of the graphite target (3).
[0027] 5) After 5 minutes, open the baffle of the graphite target (3).
[0028] 6) After 5 minutes, ad...
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