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Method for preparing gradient transition layer between hard film and substrate

A gradient transition and matrix technology, applied in coatings, metal material coating processes, ion implantation plating, etc., can solve the problems of deposition, target poisoning and sputtering rate reduction, unfavorable compounds, namely transition layer deposition, etc. The effect of uniform and dense, improving the bonding force and bearing capacity

Inactive Publication Date: 2012-11-14
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the deposition methods of the gradient transition layer currently used are mainly sputtering and reactive sputtering. The particles deposited into the film are mainly neutral atoms, the deposition rate is low, and the resulting thin film has poor compactness, especially the weak plasma, which is not conducive to the formation of compounds. Deposition of the transition layer
At the same time, since the sputtering target has a negative self-bias, it will cause ionized reactive components to deposit on the surface of the target, resulting in target poisoning and a decrease in the sputtering rate.

Method used

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  • Method for preparing gradient transition layer between hard film and substrate

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Embodiment 1

[0015] see figure 1 The preparation of the gradient transition layer between the hard film and the substrate adopts a deposition method combining sputtering, reactive sputtering and radio frequency or microwave chemical vapor deposition. The deposition equipment used includes at least one or two or more graphite targets and One or two or more metal targets, including at least one metal target and one graphite target; use radio frequency or DC sputtering power supply; metal targets are chromium, titanium, copper, aluminum, manganese, tungsten, molybdenum, iron, silicon , zinc, magnesium, tin, nickel, cobalt, indium, germanium, and gallium, or an alloy containing several of these elements, when two or more metal targets are used, the same or different targets can be used; sputtering The sputtering gas is argon or helium; the substrate is connected to a radio frequency or microwave power supply through the sample stage, and the radio frequency or microwave power is applied to the...

Embodiment 2

[0017] This embodiment is basically the same as Embodiment 1, and the special features are as follows:

[0018] When depositing a metal layer or a compound layer, radio frequency or microwave power is applied to the substrate; the hard film layer above the gradient transition layer is prepared by combining sputtering with radio frequency chemical vapor deposition or microwave chemical vapor deposition when depositing a gradient transition layer The multi-power source method, or any other commonly used thin film deposition method.

[0019] When depositing the metal layer or compound layer, the radio frequency or microwave power is applied continuously, or intermittently or partially.

[0020] The reactive gases that can be introduced during the deposition of the compound layer include organic compounds with a saturated vapor pressure above 0.1Pa at room temperature, compounds containing nitrogen, silicon, boron, phosphorus, sulfur, halogen, oxygen, and one or both of nitrogen ...

Embodiment 3

[0022] In this embodiment, it is a specific gradient transition layer preparation method, see figure 1 , the concrete steps of preparation are as follows:

[0023] 1) After vacuuming the equipment, introduce argon sputtering gas with a gas flow of about 20sscm. Turn on the radio frequency power supply (9), adjust the current to 0.15A, the voltage to 950V, and the self-bias to 420V to remove pollutants and oxide layers on the surface of the substrate.

[0024] 2) After 10 minutes, turn on the sputtering power supply (2), adjust the current to 0.3A, and the voltage to 430V to remove pollutants and oxide layers on the surface of the metal target.

[0025] 3) After 5 minutes, open the baffle of the metal target (1).

[0026] 4) After 5 minutes, turn on the sputtering power supply (4) and adjust the power to 80W to remove pollutants on the surface of the graphite target (3).

[0027] 5) After 5 minutes, open the baffle of the graphite target (3).

[0028] 6) After 5 minutes, ad...

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Abstract

The invention relates to a method for preparing a gradient transition layer between a hard film and a substrate. The method adopts a combination method of sputtering and radio frequency or microwave chemical vapor deposition to prepare the gradient transition layer, the adopted deposition equipment comprises one or two or more than two graphite targets and one or two or more than two metallic targets; radio frequency or direct current sputtering power supplies are adopted; the metallic targets are one type of pure metal of chromium, titanium, copper, aluminium, manganese, wolfram, molybdenum, iron, silicon, zinc, magnesium, tin, nickel, cobalt, indium, germanium and gallium or alloys which contain one or a plurality of elements of chromium, titanium, copper, aluminium, manganese, wolfram, molybdenum, iron, silicon, zinc, magnesium, tin, nickel, cobalt, indium, germanium and gallium; the sputtering gas is argon or helium; the substrate is connected with a radio frequency or microwave power supply through a sample stage, and radio frequency or microwave power is applied on the substrate during sputtering or reactive sputtering. The sputtering power supply of the metallic targets is regulated, so the current and voltage of the sputtering power supply are gradually reduced, or the sputtering or microwave power supply of the graphite targets is regulated, so the power of the sputtering or microwave power supply is gradually increased, and thus, the required gradient transition layer is obtained. The gradient transition layer which is prepared by the method can increase film and base binding force and film density, so the bearing capacity of the film is obviously improved.

Description

technical field [0001] The patent of the present invention relates to the preparation method of the gradient transition layer between the hard film and the substrate with strong film-base bonding force, high load bearing, and low friction and wear characteristics on the metal substrate. The hard film prepared by introducing this gradient transition layer can be widely used in various Surface protection and lubrication of metal materials. Background technique [0002] Hard films such as amorphous carbon-based films (diamond-like films) have low friction, low wear and excellent corrosion resistance in water or air, and are ideal self-lubricating materials for surface protection. However, due to the low bonding force between the general hard film and the metal material, the high internal stress of the film, and the lack of toughness, microcracks are prone to occur during the friction process. At the same time, there is a lack of systematic research on the film deposition method...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/06C23C16/505C23C16/515
Inventor 吴行阳黄一鸣华子恺张建华
Owner SHANGHAI UNIV