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Flexible organic light-emitting diode and manufacturing method thereof

A technology of light-emitting diodes and diodes, which is applied in the direction of light-emitting materials, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc. Poor thermal performance and other problems, to achieve the effect of stable luminous performance, enhanced bonding force, and low surface resistance

Active Publication Date: 2012-11-21
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The anode is usually made of polymer film as the substrate, and its surface is covered with a layer of transparent conductive film such as ITO, IZO and other materials by sputtering process. However, these conductive films also have many insurmountable problems in the application of flexible OLEDs.
For example, in the process of preparing ITO thin films, the doping ratio composition of various elements such as indium (In) and (Sn) is not easy to control, which leads to the difficulty in controlling the morphology, carrier and transport properties of ITO thin films, which leads to the failure of light-emitting devices. Unstable performance
Secondly, when preparing conductive films such as ITO on flexible substrates, due to the poor heat resistance of polymer films, low-temperature sputtering technology is usually used to prepare conductive films. The prepared conductive films have high surface resistance and the combination of films and substrates The force is not strong, so that the conductive film is prone to fall off from the substrate during the repeated bending process of the flexible OLED, which affects the light-emitting stability of the OLED light-emitting device.

Method used

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  • Flexible organic light-emitting diode and manufacturing method thereof
  • Flexible organic light-emitting diode and manufacturing method thereof
  • Flexible organic light-emitting diode and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] A flexible organic light-emitting diode, which is a layered structure, and the sequence of the layered structure is: PET / UV glue / ZnS / Sm / WO 3 / m-MTDATA / NPB / Ir(ppy) 3 :CBP / TPBi / LiF / Mg-Ag.

[0048] The preparation process of the flexible organic light emitting diode is as follows:

[0049] First, put the PEN film with a thickness of 0.1 mm in deionized water containing detergent for ultrasonic cleaning. After cleaning with deionized water, use isopropanol and acetone in ultrasonic treatment, and then blow dry with nitrogen;

[0050] Then, the PEN film is placed on the glue leveler, start the glue leveler, and the speed of the glue leveler is at 1000 rpm, and a layer of UV glue with a thickness of 0.5 μm is spin-coated on the surface of the PEN film as a smooth layer. After 120 seconds, use UV light to cure to form a buffer layer;

[0051] Subsequently, in a vacuum of 5×10 -4 In the coating system of Pa, a ZnS layer with a thickness of 40nm, an Sm layer with a thickness...

Embodiment 2

[0054] A flexible organic light-emitting diode, which is a layered structure, and the sequence of the layered structure is: PET / UV glue / ZnS / Sm / V 2 o 5 / CuPc / TPD / Ir(ppy) 3 : CBP / Bphen / CsF / Ag.

[0055] The preparation process of the flexible organic light emitting diode is as follows:

[0056] First, put the PET film with a thickness of 0.175mm in deionized water containing detergent for ultrasonic cleaning, after cleaning with deionized water, use isopropanol and acetone in ultrasonic treatment, and then blow dry with nitrogen;

[0057] Secondly, the PET film is placed on the glue leveling machine, start the glue leveling machine, and the rotating speed of this glue leveling machine is at 5000 revs / min, spin-coat a layer of thickness on the surface of the PEN film and be 5 μ m UV glue as a leveling layer, the glue leveling time is 30 Seconds later, use UV light to cure to form a buffer layer;

[0058] Subsequently, in a vacuum of 5×10 -4 In the coating system of Pa, a ZnS ...

Embodiment 3

[0061] A flexible organic light-emitting diode, which is a layered structure, and the sequence of the layered structure is: PES / UV glue / ZnSe / Sm / WO 3 / m-MTDATA / TDAPB / Ir(ppy) 3 :CBP / Alq 3 / LiF / Al.

[0062] The preparation process of the flexible organic light emitting diode is as follows:

[0063] First, put the PES film with a thickness of 0.2mm in deionized water containing detergent for ultrasonic cleaning. After cleaning with deionized water, use isopropanol and acetone in ultrasonic treatment, and then blow dry with nitrogen;

[0064] Then, the PES film is placed on the glue leveler, the glue leveler is started, and the speed of the glue leveler is 4000 rpm, and a layer of UV glue with a thickness of 1 μm is spin-coated on the surface of the PEN film as a leveling layer, and the glue leveling time is 70 Seconds later, use UV light to cure to form a buffer layer;

[0065] Subsequently, in a vacuum of 5×10 -4 In the coating system of Pa, a ZnSe layer with a thickness of ...

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Abstract

The invention belongs to the field of photoelectronic devices and discloses a flexible organic light-emitting diode and a manufacturing method thereof. The flexible organic light-emitting diode is of a laminated structure and structurally sequentially comprises a substrate, an anode layer, a hole injection layer, a hole transmission layer, a light-emitting layer, an electron transmission layer, an electron injection layer and a cathode layer. The flexible organic light-emitting diode is characterized in that a buffer layer is further arranged between the substrate and the anode layer, and the anode layer is of a multi-layer compound structure. By inserting the buffer layer, the combining force between an anode and the substrate is reinforced, so that the made flexible organic light-emitting diode is good in bending performance, stable in light-emitting performance and high in light-emitting efficiency.

Description

technical field [0001] The invention relates to the field of optoelectronic devices, in particular to a flexible organic light emitting diode. The invention also relates to a preparation method of the flexible organic light emitting diode. Background technique [0002] Organic Light Emission Diode (OLED), hereinafter referred to as OLED, has the characteristics of high brightness, wide range of material selection, low driving voltage, and full-cure active light emission. It also has the advantages of high definition, wide viewing angle, and fast response speed. The development trend of mobile communication and information display in the information age, as well as the requirements of green lighting technology, are the focus of many researchers at home and abroad. [0003] Among OLED devices in the prior art, OLED devices made of glass substrates do not have the feature of bending, and the glass is fragile, which affects the application of light emitting devices. OLED devic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56C09K11/06
Inventor 周明杰王平冯小明陈吉星
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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