Mono-crystalline silicon piece texturing alcohol-free additives and using method thereof

A single crystal silicon wafer and additive technology, applied in chemical instruments and methods, crystal growth, post-processing details, etc., can solve the problems of unsatisfactory texturing effect, poor texturing stability, and large pyramid size, etc. The effect of reducing consumption costs, reducing waste liquid treatment costs, and inexpensive equipment

Active Publication Date: 2012-12-26
广东中诚阳能科技有限公司
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The texturing effect of this kind of texturing liquid is not very ideal, there are problems such as large pyramid size, generally 10-15 μm, large amount of silicon chip corrosion, and poor texturing stability.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mono-crystalline silicon piece texturing alcohol-free additives and using method thereof
  • Mono-crystalline silicon piece texturing alcohol-free additives and using method thereof
  • Mono-crystalline silicon piece texturing alcohol-free additives and using method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The following examples illustrate the non-alcoholic additive for texturing monocrystalline silicon wafers and its application method in the present invention with detailed specific implementation methods, but the present invention is not limited to the following examples. Table 1 shows the composition and dosage of the non-alcoholic additive for texturing monocrystalline silicon wafers, and Table 2 shows the conditions and effects of using the non-alcoholic additive for texturing monocrystalline silicon wafers.

[0020] Table 1 Composition and dosage of alcohol-free additives for monocrystalline silicon wafer texturing

[0021] Example 1 Example 2 Example 3 Example 4 Example 5 Diisopropanolamine / g —— —— 10 20 25 Triisopropanolamine / g 20 30 —— 20 —— Sodium Benzoate / g 8 10 5 8 6 water / g 100 100 100 100 100

[0022] Table 2 The use conditions and effects of alcohol-free additives for monocrystalline silicon w...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
reflectanceaaaaaaaaaa
Login to view more

Abstract

The invention discloses mono-crystalline silicon piece texturing alcohol-free additives and a using method of the mono-crystalline silicon piece texturing alcohol-free additives. The mono-crystalline silicon piece texturing alcohol-free additives are composed of at least one of tri-isopropanol amine and di-isopropanol amine, sodium benzoate and water, the mass ratio of the three components is 10-40: 5-10: 100. According to the using method of the alcohol-free additives, the three components are added into sodium hydroxide aqueous solutions with the weight percentage of 1-3% according to the mass ration of 10-40: 5-10:100 to obtain alcohol-free texturing liquid, the mass ratio between the total weight of the three components and the sodium hydroxide aqueous solutions is 0.1-10:100, a mono-crystalline silicon piece is immersed into the alcohol-free texturing liquid for texturing, the texturing temperature is 75-85 DEG C, and the texturing temperature is 12-18 minutes. By means of the alcohol-free additives and the using method of the alcohol-free additives, the chemical oxygen demand (COD) value of the texturing liquid is reduced, liquid waste disposal cost is reduced, the size of pyramids of a texturing surface is thin and small and reaches 1-3 micrometers, the pyramids are distributed evenly, and reflectivity of the silicon piece is smaller than 11%.

Description

technical field [0001] The invention relates to an alcohol-free additive for making texturing of single crystal silicon wafers and a method for using the same. Background technique [0002] The textured surface of a single crystal silicon wafer is usually formed by corroding the surface of the silicon wafer with an alkaline etching solution (such as sodium hydroxide, potassium hydroxide, etc.). Alkaline etching solution has different etching rates on different crystal planes of silicon wafers, the (111) crystal plane is etched slowly, and the (100) crystal plane is etched quickly. Therefore, when the silicon wafer is etched with an alkaline etching solution, a pyramidal structure will be formed on the surface of the silicon wafer due to this anisotropic property. [0003] Texturing additives refer to the addition of chemical additives that are beneficial to the reaction results and product performance during the texturing process of monocrystalline silicon solar cells. [...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C23F1/14
Inventor 陈俊雄林栩谢晓锋
Owner 广东中诚阳能科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap