Improved method for preparing silicon nitride anti-reflecting film of crystalline silicon solar cell

A technology of solar cells and anti-reflection films, applied in circuits, electrical components, gaseous chemical plating, etc., can solve the problems of insufficient passivation effect and anti-reflection effect, poor compactness of SiNx, etc., and improve the photoelectric conversion efficiency. , improve uniformity and density, and improve the effect of absorption

Inactive Publication Date: 2013-01-09
CHANGSHA UNIVERSITY OF SCIENCE AND TECHNOLOGY
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Problems solved by technology

However, due to the high deposition rate of the traditional preparation method, the SiN x The

Method used

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  • Improved method for preparing silicon nitride anti-reflecting film of crystalline silicon solar cell
  • Improved method for preparing silicon nitride anti-reflecting film of crystalline silicon solar cell
  • Improved method for preparing silicon nitride anti-reflecting film of crystalline silicon solar cell

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Example Embodiment

[0020] Select the original polysilicon wafer with a resistivity of 0.5-6 and a crystal plane of (100). The specific process engineering is as follows:

[0021] 1. Wafer pretreatment:

[0022] (1) Chemical cleaning removes the surface damage of the silicon wafer and forms anti-reflective corrosion pits;

[0023] (2) The liquid phosphorus source diffuses to form a PN junction;

[0024] (3) Plasma etching removes the PN junction at the edge of the silicon wafer;

[0025] (4) The second cleaning removes the phosphorous silicate glass on the surface of the silicon wafer;

[0026] 2. Deposit SiN by plasma enhanced chemical vapor deposition (PECVD) x Anti-reflection coating, the coating process is:

[0027] The furnace tube is heated to a certain temperature, the graphite boat filled with silicon wafers is placed in the furnace tube, heated to the preset temperature, the cavity is evacuated, and a certain flow of NH is introduced 3 Pre-deposit the silicon wafer for 3 minutes, and pass in NH acco...

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Abstract

The invention belongs to the technical field of crystalline silicon solar cells and particularly relates to an improved method for preparing a silicon nitride anti-reflecting film of a crystalline silicon solar cell. In a traditional preparation method, the SiNx anti-reflecting film is prepared by means of a plasma enhanced chemical vapor deposition (PECVD) method, the compactness and the uniformity of the SiNx anti-reflecting film are poor due to high deposition rate, and the passivation effect and the anti-reflecting effect are not the best. The method uses SiH4 and NH3 as main reaction gas, N2 serving as a dispersing agent and side reaction gas is slowly and evenly fed in the deposition process, and the SiNx anti-reflecting film is prepared by means of the PECVD method. The silicon nitride anti-reflecting film prepared by means of the method is even, good in compactness and good in passivation effect and anti-reflecting effect. Compared with a traditional process without using the N2, the SiNx anti-reflecting film prepared by means of the method can effectively improve photoelectric conversion efficiency of the crystalline silicon solar cell by 0.2%.

Description

technical field [0001] The invention relates to the technology of crystalline silicon solar cells in the field of photovoltaic utilization of solar energy, in particular to an improved preparation method of an antireflection film for solar cells. Background technique [0002] With the continuous development of economy and society, energy crisis and environmental pollution have become serious challenges to the survival and development of all human beings. In recent years, crystalline silicon solar cells have developed rapidly and have become one of the most important ways for human beings to utilize solar energy. [0003] In the solar cell manufacturing process, the production of anti-reflection film is very important. At present, anti-reflection coatings mainly include TiO 2 , SiO 2 、SiN x Three kinds, of which TiO 2 The refractive index is 2.4, which has a good anti-reflection effect for crystalline silicon solar cells, but TiO 2 No hydrogen passivation; SiO 2 It has...

Claims

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Application Information

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IPC IPC(8): C23C16/34H01L31/18H01L31/0216
CPCY02P70/50
Inventor 周艺欧衍聪何文红黄岳文郭长春肖斌
Owner CHANGSHA UNIVERSITY OF SCIENCE AND TECHNOLOGY
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