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Terahertz schottky diode

A diode, Schottky contact technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of increasing frequency conversion loss, reducing mixer mixing efficiency, etc., to reduce parasitic capacitance, reduce discontinuity, The effect of reducing parasitic effects

Active Publication Date: 2013-01-30
孙琦
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the high frequency in the terahertz band, many high-frequency spurious effects will appear, which will reduce the mixing efficiency of the mixer and increase the conversion loss

Method used

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  • Terahertz schottky diode
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Embodiment Construction

[0024] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions of the exemplary embodiments of the present invention are described below in conjunction with the accompanying drawings. Apparently, the described embodiments are only some of the embodiments of the present invention, not all of them. The described embodiments are for illustration only and do not limit the scope of the invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0025] For the sake of narrative, the terms "upper", "lower" and attached figure 2 The up and down directions are the same, but it does not limit the structure of the present invention.

[0026] Although words first, second, etc. are used in this application to describe various elements or constituents, these element...

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Abstract

The invention provides a terahertz schottky diode. The terahertz schottky diode comprises a gallium arsenide semiconductor substrate, and a high-concentration gallium arsenide-doped layer and a low-concentration gallium arsenide-doped layer which are formed on the gallium arsenide semiconductor substrate in sequence, an ohmic contact cathode and an ohmic contact metal which are formed on the high-concentration gallium arsenide-doped layer, a schottky contact anode formed on the low-concentration gallium arsenide-doped layer, an ohmic contact cathode pressing point formed on the ohmic contact cathode, a schottky contact anode extending pressing point formed on the ohmic contact metal, a schottky contact anode extending pressing point formed on the ohmic contact metal and an overhead electroplating bridge formed on a silicon dioxide layer and a schottky contact anode, wherein the schottky contact anode extending pressing point is connected with the schottky contact anode through theoverhead electroplating bridge. By adopting a schottky diode, the parasitic effect can be reduced, the thermion noise existing in the n+GaAs can be reduced, the discontinuity between the anode pressing point and the overhead electroplating bridge can be reduced, the series resistance of the diode can be reduced, and the integration to the peripheral circuit can be easily achieved by flip chip bonding.

Description

technical field [0001] The present invention relates to semiconductor devices, and more particularly, to terahertz Schottky diodes. Background technique [0002] Terahertz waves refer to electromagnetic radiation with a frequency in the range of 0.1 THz to 10 THz (wavelength 3 mm to 30 μm), which is located between millimeter waves and infrared radiation in the electromagnetic spectrum. The unique performance of terahertz makes it widely used in communication (broadband communication), radar, electronic countermeasures, electromagnetic weapons, astronomy, medical imaging (unmarked genetic inspection, imaging at the cellular level), nondestructive testing, security inspection (biochemical inspection) and other fields have a wide range of uses. In most terahertz application fields, the heterodyne receiver has become the main terahertz signal detection method due to its high spectral resolution, large instantaneous bandwidth, and high sensitivity; and the terahertz mixer is a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872
Inventor 王昊
Owner 孙琦
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