High-density silica back sealing process for heavily-doped-phosphorous monocrystalline silicon wafer

Abstract

The invention relates to a high-density silica back sealing process for a heavily-doped-phosphorous monocrystalline silicon wafer. The process comprises the following steps of: 1. preparing a silica film through a back sealing machine by adopting APCVD (Atmospheric Pressure Chemical Vapor Deposition); 2. annealing a wafer with silica by using a thermal annealing process during the manufacturing of a semiconductor; and 3. removing an oxidation layer from the facade and the edge of the wafer by using a method of removing an oxidation film in a scratch grinding manner or a manual film pasting manner. According to the invention, a monocrystalline silicon wafer back sealing material traditionally deposited by adopting CVD (Chemical Vapor Deposition) is enhanced by using the thermal annealing process during the manufacturing of the semiconductor, so that the compactness of the traditional CVD back sealing process is improved, and the requirement of an epitaxial process of a thick layer of the heavily-doped-phosphorous monocrystalline silicon wafer is satisfied. General-purpose equipment manufactured by the semiconductor is adopted by the thermal annealing process, so that the structure principle is simple. The back sealing process provided by the invention has high feasibility and strong practicability, thereby being suitable for large-scale industrial production.

Description

Technical field [0001] The invention relates to a back processing technology of a semiconductor silicon wafer, in particular to a high-density silicon dioxide back-sealing process for a heavily doped phosphorous monocrystalline silicon wafer. Background technique [0002] The processing of monocrystalline silicon wafers generally mainly includes slicing, chamfering, grinding, etching, back treatment, polishing, cleaning and other processes. The back treatment process generally includes back damage treatment, back sealing treatment and edge oxide film removal treatment, etc. . Back-seal processing is an important process for monocrystalline silicon wafer processing. The quality of the back cover plays a crucial role in the epitaxial process. This is because generally speaking, epitaxially deposited silicon wafers are heavily doped Miscellaneous, at the temperature of the epitaxial growth process (about 1100°C), the dopants of heavily doped silicon wafers will diffuse out of the h...

AI Technical Summary

Problems solved by technology

In this case, the silicon dioxide film prepared by the traditional chemical vapor deposition (CVD—Chemical Vapor Deposition) method often cannot meet the requirements due to its insufficient compactness.