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Multi-element substrate, graphene capable of continuously adjusting layer number based on multi-element substrate and preparation method

A graphene and substrate technology, applied in the field of graphene material preparation, can solve problems such as undeveloped graphene films

Active Publication Date: 2015-01-21
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, to date, an ideal substrate for graphene thin films that can be fabricated in large areas with good uniformity and a controllable number of layers has not been developed in the art.

Method used

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  • Multi-element substrate, graphene capable of continuously adjusting layer number based on multi-element substrate and preparation method
  • Multi-element substrate, graphene capable of continuously adjusting layer number based on multi-element substrate and preparation method
  • Multi-element substrate, graphene capable of continuously adjusting layer number based on multi-element substrate and preparation method

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Experimental program
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preparation example Construction

[0042] Preparation of novel multi-component substrates

[0043] The method for preparing the multi-component substrate is the following method a or method b:

[0044] Method a: In low-carbon-soluble metal M1, or alloy M1 of low-soluble carbon metal M1 and high-soluble carbon metal M2 1-x +M2 x (x1-x +M2 x (x>0.5) film to obtain the multi-component substrate;

[0045] Method b: preparing a layer of low-carbon-soluble metal M1, or an alloy M1 of low-carbon-soluble metal M1 and high-carbon-soluble metal M2 on a non-metallic substrate 1-x +M2 x (x1-x +M2 x (x>0.5) film to obtain the multi-component substrate.

[0046] In the above method a and method b, the metal M1 is Cu, and the metal M2 includes Ru, Ti, Zr, Nb, Ta, Fe, Co, Ni, V, Rh, Pd, Co, lr, Pt, Mo , W, Zn and other metals at least one.

[0047] In said method a, said metal M1 or alloy M1 1-x +M2 x (x1-x +M2 x (x>0.5) The number of layers of the film is one or more layers, preferably one layer, and the thickness ...

Embodiment 1

[0078]Ni films were deposited on 25 μm Cu foil substrates by magnetron sputtering. Using high-purity Ni (99.99%) as the target material, the background vacuum pumped to 3.0×10 -4 Pa, using argon with a purity of 99.99% as the working gas, the working pressure is maintained at 0.8Pa; using room temperature sputtering, the distance between the target and the substrate is set to 7cm; using radio frequency magnetron sputtering, the sputtering power is 70W, the deposition time For 40 minutes, the total thickness of the prepared film was 0.6 μm.

[0079] Put the Cu foil / Ni thin film binary substrate prepared above into the chemical vapor deposition reaction chamber, seal it, check the air tightness, and put it in the protective atmosphere Ar+H 2 Exhaust down, then heat until the reaction temperature is 650°C, 750°C, 850°C, 950°C, 1000°C respectively, after 10 minutes of constant temperature, introduce carbon source CH 4 , hydrogen and protective gas, the gas flow rate is 2 sccm, a...

Embodiment 2

[0088] Ni films were deposited on 25 μm Cu foil substrates by magnetron sputtering. With high-purity Co (99.99%) as the target material, the background vacuum pumped to 3.0×10 -4 Pa, with argon with a purity of 99.99% as the working gas, the working pressure is maintained at 0.8Pa, room temperature sputtering is used, the distance between the target and the substrate is set to 7cm, radio frequency magnetron sputtering is used, the sputtering power is 80W, and the deposition The time is 20 minutes, and the total thickness of the prepared polycrystalline Ni film is 0.2 μm.

[0089] Put the Cu foil / Ni film binary substrate prepared above into the chemical vapor deposition reaction chamber, seal it, check the air tightness, and heat it at room temperature for 25 minutes in hydrogen (flow rate is 400sccm) and argon (flow rate is 500sccm) After reaching 900°C, keep the temperature for 20 minutes for annealing, and then raise the temperature to 1000°C for 5 minutes, and then pass th...

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Abstract

The invention relates to a multi-element substrate, graphene capable of continuously adjusting layer number based on the multi-element substrate and a preparation method, and provides the multi-element substrate of graphene capable of continuously adjusting the layer number, which comprises a metal substrate, the metal substrate is low-solubility carbon metal M1, or an alloy M11-x+M2x of the low-solubility carbon metal M1 and a high-solubility carbon metal M2, in the formula, 0<x<0.5; a magnetron sputtering method or a pulse laser deposition method are used for covering a metal film on the metal substrate, the metal film is at least one layer of high-solubility carbon metal M2, or the alloy M11-x+M2x of the low-solubility carbon metal M1 and a high-solubility carbon metal M2, in the formula, 1>x>0.5; wherein M1 is Cu, M2 is selected from Ru, Ti, Zr, Nb, Ta, Fe, Co, Ni, V, Rh, Pd, Co, lr, Pt, Mo, W, Zn or the combination. The invention also provides the graphene capable of continuously adjusting the layer number based on the multi-element substrate and preparation method thereof.

Description

technical field [0001] The invention belongs to the technical field of preparation of graphene materials, and relates to a novel multi-element substrate for graphene with continuously adjustable layer number and graphene with continuously adjustable layer number based on the multi-element substrate. The present invention also relates to the use of dual or multi-element substrates covered with one or more layers of high-dissolution carbon metal or alloy thin films on low-dissolution carbon metals or alloys to prepare continuously regulated layers at different reaction temperatures through kinetic control A method for high-quality graphene. Background technique [0002] Graphene has atomic-scale thickness, excellent electrical properties, excellent chemical stability and thermodynamic stability, these properties make graphene have important application prospects in future nanoelectronics, and has become the current condensed matter physics and materials science research hotsp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/44C23C14/16C23C16/26H01L21/02
Inventor 万冬云黄富强林天全毕辉谢晓明江绵恒
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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