Crystalline silicon solar cell antireflection film

A technology of solar cells and anti-reflection coatings, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of low photoelectric conversion efficiency and multi-reflection loss of crystalline silicon solar cells, and achieve good chemical stability, low absorption rate, The effect of good passivation effect

Inactive Publication Date: 2013-03-27
JIANGSU CHENDIAN SOLAR PHOTOELECTRIC TECH
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  • Abstract
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AI Technical Summary

Problems solved by technology

However, although the existing single-layer or double-layer coatings have been able to achieve better passivation and anti-reflection effects, their reflectivity is still very high. The reflectivity of single-layer coatings is 6.5%-7%. The reflectivity of crystalline silicon solar cells is still very low when the reflectivity is between 5.8% and 6.1%.

Method used

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  • Crystalline silicon solar cell antireflection film

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Embodiment Construction

[0020] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0021] Such as figure 1 shown. An anti-reflection film for a crystalline silicon solar cell, in which a silicon nitride oxide film layer 2, a titanium dioxide film layer 3, a silicon nitride film layer 4 and a silicon dioxide film layer 5 are sequentially deposited on the surface of a silicon wafer 1 of the solar cell. The silicon nitride oxide film layer 2 used in the present invention has a thickness of 8 nm and a refractive index of 2.16; a titanium dioxide film layer 3 has a thickness of 18 nm and a refractive index of 2.02; a silicon nitride film layer 4 has a thickness of 30 nm and a refractive index of 1.85; The silicon dioxide film layer 5 has a thickness of 45 nm and a refractive index of 1.48.

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Abstract

The invention discloses a crystalline silicon solar cell antireflection film which is characterized by comprising a silicon oxynitride film, a titanium dioxide film, a silicon nitride film and a silicon dioxide film sequentially deposited on the surface of a silicon wafer. The refractive index of the four films gradually decreases from the silicon oxynitride film to the silicon dioxide film, and the thickness of the four films gradually increases from the silicon oxynitride film to the silicon dioxide film. The titanium dioxide film has high chemical stability to most chemical substances during production of cells and is high in refractive index and low in absorption rate, the silicon nitride film has good passivating effect on the silicon wafer, the silicon dioxide film has high damage threshold and excellent optical performance, and the silicon oxynitride film has excellent characteristics of silicon nitride and silicon oxide. Consequently, the crystalline silicon solar cell antireflection film can well improve optical conversion efficiency.

Description

[0001] technical field [0002] The invention relates to an anti-reflection film structure of a solar cell, in particular to a stacked anti-reflection film structure, in particular to an anti-reflection film for a crystalline silicon solar cell. Background technique [0003] A solar cell is a device that converts solar energy into electrical energy. The conversion efficiency of a solar cell is generally defined as the ratio of the output power of the cell to the total power of sunlight incident on the surface of the cell. Sunlight will be reflected and refracted when it hits the surface of the cell. In order to improve the conversion efficiency of the cell, it is necessary to reduce the reflection loss as much as possible. The production of anti-reflection film directly affects the reflectivity of solar cells to incident light, and plays a very important role in improving the efficiency of solar cells. [0004] At present, in the large-scale production of crystalline silico...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216
Inventor 张晨张森林
Owner JIANGSU CHENDIAN SOLAR PHOTOELECTRIC TECH
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