Processing method for single-cut corrosion slices of monocrystalline silicon wafer

Abstract

The invention relates to a processing method for single-cut corrosion slices of a monocrystalline silicon wafer. The processing method comprises the following steps: 1, controlling the double-sided removal rate of the silicon wafer to be 20 plus (minus) 2 microns; 2, preparing acid corrosion resistant liquid consisting of the following components in percentage by weight: 9.03-12.41% of hydrofluoric acid, 39.9-42.0% of nitric acid, 19.2-23.1% of acetic acid, which are mixed by adding deionized water; 3, adding ammonia water to the acid corrosion resistant liquid as the additive, wherein the adding amount of the ammonia water is 1.08-2.48% of the total amount of the acid corrosion resistant liquid; 4, controlling the surface gloss of the corroded silicon wafer to 2-4Gs; 5, blowing nitrogen gas at the nitrogen gas position of 50-150 mm in an acid corrosion process, wherein the flow rate of the nitrogen gas is 100-300L / min, the pressure of the nitrogen gas is 80-300Pa, and the nitrogen gas blowing lasts in the whole process; 6, enabling the circulation volume of the acid corrosion resistant liquid to 300L, and enabling the discharge volume of the acid corrosion resistant liquid to 1-2L and the compensation amount of the acid corrosion resistant liquid to 0.3-1L after corroding 50 slices every time. The processing method is adopted to replace slice grinding and corroding to prepare the single-cut corrosion slices of the monocrystalline silicon wafer, so that the processing processes from the chamfering to the grinding are saved, the yield is increased, and the cost is greatly reduced. Therefore, the processing method achieves the purpose of replacing slice grinding and corroding to prepare the single-cut corrosion slices of monocrystalline silicon wafer.

Description

technical field [0001] The invention relates to a surface processing technology of a single-crystal silicon wafer, in particular to a processing method for a single-cut etching wafer of a single-crystal silicon wafer. Background technique [0002] As the base material of semiconductor device manufacturers—the main processing flow of polished single crystal silicon wafers includes: single crystal growth→rolling→slicing→chamfering→grinding→corrosion→back damage→back sealing→edge removal→polishing→cleaning→ packaging etc. Polishing sheets have better surface flatness, smaller roughness and high reflectivity, but polishing sheets have higher requirements on processing equipment, processing environment, cleaning methods, and purity of chemical auxiliary materials, so the cost will also be higher. In recent years, with the rapid development of the semiconductor industry and fierce market competition, in order to reduce the cost of semiconductor raw materials, more and more semico...

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Problems solved by technology

[0004] However, if the conventional acid etching or alkali etching process and related technologies publicly reported in the prior art are used for corrosion processing, the surface of the obtained corrosion sheet is difficult to meet the customer's requirements, which is usually reflected in geometric parameters such as large TTV and high fragmentation rate. High, there are lines on the surface, etc., so it is difficult to make stable processing of large quantities of products

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