Processing method for single-cut corrosion slices of monocrystalline silicon wafer
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A processing method and technology for corroding sheets, which are applied in chemical instruments and methods, crystal growth, post-processing details, etc., can solve the problems that the corroded sheets are difficult to meet customer requirements, there are line marks on the surface, and the geometric parameters are large, so as to eliminate the need for pouring Corner to grinding, reduced debris rate, uniform response effect
Inactive Publication Date: 2013-04-03
TIANJIN ZHONGHUAN ADVANCED MATERIAL TECH
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[0004] However, if the conventional acid etching or alkali etching process and related technologies publicly reported in the prior art are used for corrosion processing, the surface of the obtained corrosion sheet is difficult to meet the cu
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[0026] Embodiment 1: 5 inch zone melt doping P Crystal-oriented silicon wafer, resistivity 0.0034±12%Ω.cm, thickness 203μm. Take the following process:
[0027] 1) Control the removal of silicon wafers on both sides to 20±2μm.
[0028] 2) According to the product specifications of the silicon wafer, the acid etching solution is prepared according to the concentration percentage of the following components: HF: HNO 3 : CH 3 COOH=9.03%: 39.9%: 23.1%, the remaining components are deionized water.
[0029] 3) Add ammonia water as an additive to the acid etching solution, and the ammonia water is 2% of the total acid etching solution.
[0030] 4) The surface gloss of the etched silicon wafer is controlled at 3Gs.
[0031] 5) During the acid etching process, select ten different positions within the range of 50~150mm for nitrogen to blow nitrogen into the acid etching bath. The comparison of the results is shown in figure 1 .
[0032] 6) Select the appropriate process for corrosion: keep th...
Example Embodiment
[0036] Example 2: 5 inch zone melt doping P Crystal-oriented silicon wafer, resistivity 0.0034±12%Ω.cm, thickness 203μm. The process steps are as follows:
[0037] 1) Control the removal of silicon wafers on both sides to 20±2μm.
[0038] 2) According to the product specifications of the silicon wafer, the acid etching solution is prepared according to the concentration percentage of the following components: HF: HNO 3 : CH 3 COOH=9.03%: 39.9%: 23.1%, the remaining components are deionized water.
[0039] 3) Add ammonia water as an additive to the acid etching solution, and the ammonia water is 2% of the total acid etching solution.
[0040] 4) The surface gloss of the etched silicon wafer is controlled at 3Gs.
[0041] 5) Select the appropriate process for corrosion: keep the temperature of the acid etching solution at 35℃; the self-rotating speed is 50rpm and the public rotating speed is 10rpm; the circulation volume of the acid etching solution is 300L; the nitrogen position is 117...
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Abstract
The invention relates to a processing method for single-cut corrosion slices of a monocrystalline silicon wafer. The processing method comprises the following steps: 1, controlling the double-sided removal rate of the silicon wafer to be 20 plus (minus) 2 microns; 2, preparing acid corrosion resistant liquid consisting of the following components in percentage by weight: 9.03-12.41% of hydrofluoric acid, 39.9-42.0% of nitric acid, 19.2-23.1% of acetic acid, which are mixed by adding deionized water; 3, adding ammonia water to the acid corrosion resistant liquid as the additive, wherein the adding amount of the ammonia water is 1.08-2.48% of the total amount of the acid corrosion resistant liquid; 4, controlling the surface gloss of the corroded silicon wafer to 2-4Gs; 5, blowing nitrogen gas at the nitrogen gas position of 50-150 mm in an acid corrosion process, wherein the flow rate of the nitrogen gas is 100-300L/min, the pressure of the nitrogen gas is 80-300Pa, and the nitrogen gas blowing lasts in the whole process; 6, enabling the circulation volume of the acid corrosion resistant liquid to 300L, and enabling the discharge volume of the acid corrosion resistant liquid to 1-2L and the compensation amount of the acid corrosion resistant liquid to 0.3-1L after corroding 50 slices every time. The processing method is adopted to replace slice grinding and corroding to prepare the single-cut corrosion slices of the monocrystalline silicon wafer, so that the processing processes from the chamfering to the grinding are saved, the yield is increased, and the cost is greatly reduced. Therefore, the processing method achieves the purpose of replacing slice grinding and corroding to prepare the single-cut corrosion slices of monocrystalline silicon wafer.
Description
technical field [0001] The invention relates to a surface processing technology of a single-crystal silicon wafer, in particular to a processing method for a single-cut etching wafer of a single-crystal silicon wafer. Background technique [0002] As the base material of semiconductor device manufacturers—the main processing flow of polished single crystal silicon wafers includes: single crystal growth→rolling→slicing→chamfering→grinding→corrosion→back damage→back sealing→edge removal→polishing→cleaning→ packaging etc. Polishing sheets have better surface flatness, smaller roughness and high reflectivity, but polishing sheets have higher requirements on processing equipment, processing environment, cleaning methods, and purity of chemical auxiliary materials, so the cost will also be higher. In recent years, with the rapid development of the semiconductor industry and fierce market competition, in order to reduce the cost of semiconductor raw materials, more and more semico...
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