The invention relates to a
processing method for single-
cut corrosion slices of a
monocrystalline silicon wafer. The
processing method comprises the following steps: 1, controlling the double-sided removal rate of the
silicon wafer to be 20 plus (minus) 2 microns; 2, preparing
acid corrosion resistant liquid consisting of the following components in percentage by weight: 9.03-12.41% of
hydrofluoric acid, 39.9-42.0% of
nitric acid, 19.2-23.1% of
acetic acid, which are mixed by adding deionized water; 3, adding
ammonia water to the
acid corrosion resistant liquid as the additive, wherein the adding amount of the
ammonia water is 1.08-2.48% of the total amount of the
acid corrosion resistant liquid; 4, controlling the surface gloss of the corroded
silicon wafer to 2-4Gs; 5, blowing
nitrogen gas at the
nitrogen gas position of 50-150 mm in an acid
corrosion process, wherein the flow rate of the
nitrogen gas is 100-300L / min, the pressure of the
nitrogen gas is 80-300Pa, and the
nitrogen gas blowing lasts in the whole process; 6, enabling the circulation volume of the acid
corrosion resistant liquid to 300L, and enabling the
discharge volume of the acid
corrosion resistant liquid to 1-2L and the compensation amount of the acid
corrosion resistant liquid to 0.3-1L after corroding 50 slices every time. The
processing method is adopted to replace slice
grinding and corroding to prepare the single-
cut corrosion slices of the
monocrystalline silicon wafer, so that the processing processes from the chamfering to the
grinding are saved, the yield is increased, and the cost is greatly reduced. Therefore, the processing method achieves the purpose of replacing slice
grinding and corroding to prepare the single-
cut corrosion slices of
monocrystalline silicon wafer.