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Photovoltaic cell with three layers of antireflective films in composite structures and composite coating method thereof

A technology of anti-reflection film and photovoltaic cell, which is applied in the direction of circuits, electrical components, sustainable manufacturing/processing, etc. It can solve the problems of narrow anti-reflection spectrum bandwidth, difficulty in improving photoelectric conversion efficiency of solar photovoltaic cells, and difficulty in improving photoelectric conversion efficiency. , to achieve the effect of expanding the anti-reflection spectral bandwidth, improving the photoelectric conversion efficiency, and overcoming the narrow anti-reflection spectral bandwidth

Active Publication Date: 2013-04-03
RISEN ENERGY
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Problems solved by technology

The prior art adopts plasma-enhanced chemical vapor deposition method PECVD to combine nitrogen and silicon to form a silicon nitride film for reducing reflection on the surface of the silicon wafer; the silicon nitride anti-reflection film of the prior art is a single-layer film, Due to the narrow bandwidth of the anti-reflection spectrum of the single-layer film, it only has an anti-reflection effect on certain spectrum bands of sunlight radiation, while more than 35% of the sunlight in other spectrum bands is reflected by the surface of the silicon wafer of the battery, resulting in solar photovoltaic cells. It is difficult to improve the photoelectric conversion efficiency because it cannot fully absorb sunlight radiation energy in other bands; therefore, the existing technology has the problems and shortcomings of narrow anti-reflection spectrum bandwidth and difficult improvement of photoelectric conversion efficiency

Method used

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  • Photovoltaic cell with three layers of antireflective films in composite structures and composite coating method thereof
  • Photovoltaic cell with three layers of antireflective films in composite structures and composite coating method thereof
  • Photovoltaic cell with three layers of antireflective films in composite structures and composite coating method thereof

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Embodiment

[0043] conditions, equipment

[0044] Ambient air pressure: one atmosphere;

[0045] Ambient temperature: room temperature;

[0046] Preparation equipment: PECVD deposition furnace;

[0047] Process flow: into the furnace, nitrogen filling, vacuuming, pre-deposition, vacuuming, coating the first layer of film, coating the second layer of film, coating the third layer of film;

[0048] Step 1, into the furnace;

[0049] Insert the silicon wafer 4 after surface texturing, diffusion junction, dephosphorous silicon glass, and plasma etching into the graphite boat, then put the graphite boat together with the silicon wafer 4 into the PECVD deposition furnace, and close the furnace door;

[0050] Step 2, Nitrogen filling;

[0051] Open the nitrogen valve and exhaust valve of the PECVD furnace, feed nitrogen into the PECVD furnace, and replace and remove the air in the PECVD furnace by nitrogen, so that the PECVD furnace is in a nitrogen atmosphere; after that, close the exhaust va...

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Abstract

The invention discloses a photovoltaic cell with three layers of antireflective films in composite structures and a composite coating method thereof. Three layers of silicon nitride antireflective films in composites structures are coated on the surface of a silicon chip of the photovoltaic cell from inside to outside, thicknesses and refractive indexes are 10nm, 2.3; 22nm, 2.16; and 50nm, 2.0 respectively. Through refraction synthesis of composite film layers, the absorption bandwidth of the silicon chip to sunshine of each frequency spectrum band is expanded, reflection is reduced maximally to improve the photoelectric conversion efficiency of the photovoltaic cell, the defects that the antireflection spectral bandwidth is narrow and the photoelectric conversion efficiency is difficult to improve in the prior art are overcome, the antireflection spectral bandwidth is expanded and the photoelectric conversion efficiency is improved through the three layers of the silicon nitride antireflective films in composites structures.

Description

technical field [0001] The present invention relates to a solar photovoltaic cell, specifically refers to a photovoltaic cell of a three-layer composite structure antireflection film deposited on the surface of a solar photovoltaic cell and a silicon nitride antireflection film for reducing surface reflection and improving photoelectric conversion efficiency and its composite coating method. Background technique [0002] In order to reduce the surface reflection and improve the photoelectric conversion efficiency of the solar photovoltaic cell, it is necessary to deposit a silicon nitride anti-reflection film on the surface of the silicon wafer. The prior art adopts plasma-enhanced chemical vapor deposition method PECVD to combine nitrogen and silicon to form a silicon nitride film for reducing reflection on the surface of the silicon wafer; the silicon nitride anti-reflection film of the prior art is a single-layer film, Due to the narrow bandwidth of the anti-reflection s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/205
CPCY02P70/50
Inventor 林海峰高慧慧曾学仁陈国标唐坤友石金中
Owner RISEN ENERGY
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