Manufacturing method for double protection layers in semiconductor device
A double-layer protection and manufacturing process technology, applied in semiconductor/solid-state device manufacturing, electrical components, photosensitive material processing, etc., can solve the problems of complex process and high cost, simplify the process flow, save production costs, and save one etching the effect of the process
Active Publication Date: 2015-06-03
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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[0005] It can be seen from the above that in the existing manufacturing process, two different masks are used, that is, the masks of step (3) and step (8), and two photolithography steps (3) and (8) are used. The process of photolithography and one-time etching, that is, the etching process of step (5), is completed because two photolithography masks and two photolithography are used in this process, the process is complicated and the cost is high
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[0034] Such as image 3 As shown in FIG. 4, the manufacturing process of the double-layer protective layer in the semiconductor device of the embodiment of the present invention includes the following steps:
[0035] Step 1, such as Figure 4A As shown, a silicon chip 1 with a top layer metal pattern 2 is provided; the metal pattern 2 is used to connect with metal leads when the subsequent device is packaged, and the silicon chip 1 already includes a conventional semiconductor process Various semiconductor devices made.
[0036] Step two, such as Figure 4B As shown, the photosensitive polyimide 3 is spin-coated and baked on the silicon wafer 1; the photosensitive polyimide 3 refers to its G-line with a wavelength of 436 nanometers, a wavelength of 365 Nano I-line, KrF with a wavelength of 248 nanometers and ArF with a wavelength of 193 nanometers have photosensitivity, and the photosensitive polyimide 3 can be dissolved in commonly used Tetramethylamine hydroxide (TMAH) d...
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Abstract
The invention discloses a manufacturing method for double protection layers in a semiconductor device, which comprises the steps of providing a silicon wafer with a top medal graphics, spin-coating and baking of photosensitive polyimide, spin-coating and baking of non-photosensitive polyimide, spin-coating and baking of photoresist, using of a mask with a protective layer graph for exposure, developing and removing photoresist, non-photosensitive polyimide, and photosensitive polyimide in bottom in exposure area to form a double protective layer structure of polyimide and expose top medal wires, using photoresist stripping liquid to removing photoresist, and solidifying the non-photosensitive polyimide and photosensitive polyimide in the same time. The manufacturing method for double protection layers in the semiconductor device only includes one- time using of lithography, compared with the prior art, the process of one-time lithography and one-time etching is shortened, but also a mask is saved, manufacturing process is effectively simplified, and production cost is saved.
Description
technical field [0001] The invention relates to a manufacturing process method of a semiconductor integrated circuit, in particular to a manufacturing process method of a double-layer protective layer in a semiconductor device. Background technique [0002] In the semiconductor process, in order to reduce the erosion of various water vapor and chemical substances, electromagnetic radiation and mechanical external force damage caused by the natural environment and working environment to the semiconductor device, usually after the top metal connection is completed, one or two layers are made. Layer protection layer (also known as passivation layer or buffer layer) is used to prevent these erosion and damage, some dielectric materials (such as: silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ), silicon oxynitride (SiON), doped dielectric materials and their mutual composition) and polyimide (Polyimide) materials due to their good high temperature resistance, mechanical pr...
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IPC IPC(8): H01L21/027H01L21/02G03F7/26
Inventor 郭晓波
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP