Method of improving light current of silicon thin film solar cell
A solar cell, silicon thin film technology, applied in circuits, electrical components, sustainable manufacturing/processing, etc., can solve the problems of carrier surface recombination, difficult control, complex process, etc., to improve photocurrent, low cost, flexible matching effect
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[0014] Such as figure 1 , using transparent conductive glass (1) as the substrate, depositing the copper island film in the magnetron sputtering vacuum chamber, the specific process parameters are as follows: the background vacuum is 5*10 -4 Pa or higher, the purity of the copper target is above 99.99%, the gas is argon with a purity of 99.999%, the deposition pressure is between 0.8Pa-3Pa, the substrate temperature is 150°C-200°C, and the deposition time is 10S-30S. The film thickness is 15nm-30nm. In-situ annealing is carried out on the prepared copper island film in the same vacuum chamber, the annealing temperature is maintained at 300°C-400°C, and the annealing time is 1.5-3 hours to form a copper nanoparticle array (2), the size of which is between 15- Between 30nm, its shape can be spherical, ellipsoidal, cylindrical or prismatic, and the particle distance can be increased by prolonging the annealing time as required. Vacuum for 10-20 minutes after annealing to make t...
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