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Preparation method for silicon nitride heating body

A technology of a silicon nitride heating element and a manufacturing method, which is applied in the direction of heating element materials, can solve the problems of reducing safety and reliability, degrading the insulation performance of materials, and large grain boundary stress, so as to improve reliability and safety, Effect of eliminating material stress and promoting crystallization

Active Publication Date: 2013-05-08
JIANGSU JINSHENG CERAMIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The infiltration of carbon elements will deteriorate the insulation performance of the material, reducing safety and reliability
At the same time, due to the short hot-press sintering time and relying on mechanical pressure to strengthen the densification effect, the obtained material has a microstructure with large grain boundary stress and insufficient liquid phase crystallization, which affects the service life of the base material

Method used

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  • Preparation method for silicon nitride heating body

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Effect test

Embodiment 1）

[0022] The silicon nitride heating element in this embodiment is composed of silicon nitride heating element and a high-temperature metal heating wire arranged in the silicon nitride heating element. The metal heating wire is tungsten wire, molybdenum wire or tungsten-molybdenum alloy wire.

[0023] The manufacturing method of the above-mentioned silicon nitride heating element comprises:

[0024] Step 1. Put the silicon nitride powder and the high-temperature liquid phase sintering aid into anhydrous ethanol at a weight ratio of 0.96:0.04 to 0.80:0.20 and mix (specifically, a ball mill mixer can be used for mixing), and mix for 10-72 hours Afterwards, the formulation is made through spray granulation;

[0025] Step 2, embedding the metal heating wire in the formula and dry-pressing for molding, then further pressing for molding by cold isostatic pressing of 180-220MPa, and holding the pressure for 3-10 minutes to make a green body;

[0026] Step 3, drying after evenly coati...

Embodiment 2）

[0032] On the basis of embodiment 1, the manufacturing method of the silicon nitride heating element of the present embodiment comprises:

[0033] 92wt% silicon nitride powder, 3wt% Al 2 o 3 , 3wt% of Y 2 o 3 , 1wt% MgO, 1wt% AlN, add 99.9% absolute ethanol and mix evenly for 72 hours, then put it into an explosion-proof spray granulation tower and spray granulate to make the formula.

[0034]Pour the formula into the mold, and then embed the metal heating wire in the powder and dry press to form it. The size is 120*20*10. Then the dry-pressed blank is packaged and put into cold isostatic pressing equipment for isostatic pressing. The pressure of isostatic pressing is 200 MPa, and the holding time is 3-10 minutes. Mix high-purity absolute ethanol and boron nitride fine powder to form a thick slurry, apply a layer of uniform boron nitride isolation layer on the surface of the green body by scraping method, and dry it. A boron nitride isolation layer is also coated on the c...

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Abstract

The invention relates to a preparation method for a silicon nitride heating body. The preparation method comprises that silicon nitride powder and small amount of high-temperature liquid-phase sintering aid are arranged into absolute ethyl alcohol to be mixed, the mixture is made into a formula material through spraying granulation 10-72 hours after mixing; a metal heating wire is embedded into the formula material, the formula material is formed by drying and pressing; then the formula material is further formed by pressing through isostatic cool pressing of 180-220Mpa, pressure is maintained for 3-10 minutes, and the material is formed into a biscuit; then a boron nitride isolation layer is evenly coated on the surface of the biscuit, the biscuit is dried; the biscuit is sintered through hot pressing, sintering pressure is 20-30MPa, sintering temperature is from 1600-1900 DEG C, heat insulation time is 0.5-4 hours, and a blank is formed; and finally, the blank is arranged into a vacuum atmosphere furnace, constant temperature of 1300-1600 DEG C is kept for 10-24 hours, and then the blank is naturally cooled to room temperature. The boron nitride isolation layer is thick slurry formed by mixing the absolute ethyl alcohol with a mixture prepared by mixing the boron nitride powder and silicon nitride powder.

Description

[0001] This application is a divisional application, the application number of the original application: 201010582116.2, the application date: 2010-12-09, the name of the invention: the manufacturing method of the silicon nitride heating element. technical field [0002] The invention relates to the technical field of manufacturing methods of electric heating elements, in particular to a manufacturing method of a silicon nitride heating element. Background technique [0003] Silicon nitride is a covalently bonded ceramic, pure Si 3 N 4 The powder cannot be sintered, and a small amount of sintering aid must be added to form a liquid phase at high temperature for liquid phase sintering in order to obtain silicon nitride materials with excellent properties. Commonly used additives include: Al 2 o 3 , MgO, SiO 2 and other metal oxides, Y 2 o 3 , La 2 o 3 , CeO 2 and other rare earth oxides, as well as AlN, Mg 3 N 2 , TiN, ZrN and other nitrides. High-performance sili...

Claims

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Application Information

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IPC IPC(8): H05B3/10H05B3/18C04B35/584C04B35/622
Inventor 冯志峰
Owner JIANGSU JINSHENG CERAMIC TECH
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