Composite structure based on metamaterials and semiconductor low dimension quantum materials and application thereof
A composite structure and semiconductor technology, applied in optical demodulation, instrumentation, optics, etc., can solve problems such as all-optical switches and all-optical wavelength converters that have not yet been discovered, and achieve broad application range, large extinction ratio, and small response time Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0033] Example 1. Composite structure based on metamaterials and semiconductor low-dimensional quantum materials
[0034] see figure 1 , which is an embodiment of the composite structure of the present invention based on metamaterials and semiconductor low-dimensional quantum materials, which can be used for all-optical switches and all-optical wavelength conversion.
[0035] The composite structure is composed of substrate 1, buffer layer 2, semiconductor low-dimensional quantum material 3, semiconductor interlayer material 4, and metamaterial 5 arranged from bottom to top ( figure 1 ). Among them: metamaterial 5 is a periodically arranged metal wire array, a periodically arranged metal split resonator ring array or a fishnet structure; and semiconductor low-dimensional quantum material 3 refers to semiconductor quantum wells, quantum wires, and quantum dots. Between the metamaterial 5 and the semiconductor low-dimensional quantum material 3 is a very thin semiconductor i...
Embodiment 2
[0042] Example 2. Preparation of a composite structure based on metamaterials and semiconductor low-dimensional quantum materials
[0043] The following briefly gives a production figure 1 The shown process flow based on the composite structure of metamaterials and semiconductor low-dimensional quantum materials:
[0044] (1) Using metal organic chemical vapor deposition (MOCVD) equipment on the InP substrate to epitaxially grow a 1-1.5-micron thick InP buffer layer and 1-3 cycles of InGaAsP / InP low-dimensional quantum materials from bottom to top ( Well material is In 0.85 Ga 0.15 As 0.65 P 0.35 , thickness of 10 nanometers; barrier region material InP thickness of 11 nanometers), 5 nanometers - 50 nanometers thick InP interlayer material.
[0045] (2) Next, on the InP interlayer material, use an electron beam exposure machine to write the SRR array pattern.
[0046] (3) Deposit gold with a thickness of 30 nanometers using electron beam evaporation equipment.
[0047]...
Embodiment 3
[0050] Example 3. An all-optical switch based on a composite structure of metamaterials and semiconductor low-dimensional quantum materials
[0051] On the basis of the composite structure based on metamaterials and semiconductor low-dimensional quantum materials described in Example 1, adding control light 6 and working light 7 can be used as an all-optical switch, such as Figure 4 shown. Both the control light 6 and the working light 7 are vertically incident from the side of the metamaterial 5 , and they pass through each component of the composite structure in turn, and are transmitted from the side of the substrate 1 . Output light refers to transmitted light.
[0052] The all-optical switch involves two beams of incident light, one of which is the control light 6 and the other is the working light 7; the on or off of the control light 6 determines the on and off state of the output working light 7. The photon energy E1 of the working light 7 is smaller than the photon...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
length | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com