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BiVO4/Bi2WO6 composite semiconductor material as well as hydrothermal preparation method and application thereof

A compound semiconductor and preparation process technology, applied in the field of BiVO4/Bi2WO6 compound semiconductor material and its hydrothermal preparation, can solve the problems of narrow absorption range in the visible light region, fast photogenerated carrier recombination rate, etc. The effect of controllable bulk structure and morphology and low reaction temperature

Inactive Publication Date: 2013-07-10
NANJING UNIV OF INFORMATION SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, as Bi 2 WO 6 Single system, which still has the shortcomings of narrow absorption range in the visible light region (400-460nm) and fast recombination rate of photogenerated carriers, so the solar energy utilization rate and quantum efficiency still need to be improved and improved

Method used

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  • BiVO4/Bi2WO6 composite semiconductor material as well as hydrothermal preparation method and application thereof
  • BiVO4/Bi2WO6 composite semiconductor material as well as hydrothermal preparation method and application thereof
  • BiVO4/Bi2WO6 composite semiconductor material as well as hydrothermal preparation method and application thereof

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Experimental program
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Effect test

Embodiment 1

[0029]BiVO of the present invention 4 / Bi 2 WO 6 A compound semiconductor material with a nominal composition of (1-x)BiVO 4 / xBi 2 WO 6 , where x=50mol% (x represents Bi 2 WO 6 accounted for the mole percent of the system). Its concrete preparation steps are as follows:

[0030] a) Weigh 1mmol (0.1170g) of NH 4 VO 3 Dissolve 0.2550g ammonium tungstate in 10mL 2mol / L NaOH solution to make transparent solution A;

[0031] b) Weigh 1.4553g of Bi(NO 3 ) 3 ·5H 2 O dissolved in 10mL2mol / L HNO 3 A transparent solution B is made in the solution;

[0032] c) Gradually add the above-mentioned solution A to the solution B dropwise under constant stirring to form a suspension, continue stirring for 1 hour after the addition is complete, and then adjust the pH value of the system to 5 with 2mol / L NaOH solution. Continue stirring for 2h to obtain a precursor solution;

[0033] d) Transfer the precursor solution prepared above to a stainless steel reaction kettle lined with ...

Embodiment 2

[0035] BiVO of the present invention 4 / Bi 2 WO 6 A compound semiconductor material with a nominal composition of (1-x)BiVO 4 / xBi 2 WO 6 , where x=50mol% (x represents Bi 2 WO 6 Accounting for the molar percentage of the system), its specific preparation steps are as follows:

[0036] a) Weigh 1mmol (0.1170g) of NH 4 VO 3 Dissolve 0.2550g ammonium tungstate in 10mL 2mol / L NaOH solution to make transparent solution A;

[0037] b) Weigh 1.4553g of Bi(NO 3 ) 3 ·5H 2 O dissolved in 10mL2mol / L HNO 3 A transparent solution B is made in the solution;

[0038] c) Gradually add the above-mentioned solution A into the solution B dropwise under constant stirring to form a suspension, continue stirring for 1 hour after the addition is complete, and then adjust the pH value of the system to 2 with 2mol / L NaOH solution. Continue stirring for 2h to obtain a precursor solution;

[0039] d) Transfer the precursor solution prepared above to a stainless steel reaction kettle line...

Embodiment 3

[0041] BiVO of the present invention 4 / Bi 2 WO 6 A compound semiconductor material with a nominal composition of (1-x)BiVO 4 / xBi 2 WO 6 , where x=10mol% (x represents Bi 2 WO 6 Accounting for the molar percentage of the system) its specific preparation steps are as follows:

[0042] a) Weigh 2mmol (0.2336g) NH 4 VO 3 Dissolve 0.0566g ammonium tungstate in 10mL 2mol / L NaOH solution to make transparent solution A.

[0043] b) Weigh 1.1856g of Bi(NO 3 ) 3 ·5H 2 O dissolved in 10mL2mol / L HNO 3 A transparent solution B is made in the solution;

[0044] c) Gradually add the above-mentioned solution A into the solution B dropwise under constant stirring to form a suspension, continue stirring for 1 hour after the addition is complete, and then use 2mol / L NaOH solution to adjust the pH value of the system to 3, Continue stirring for 3h to obtain a precursor solution;

[0045] d) Transfer the precursor solution prepared above to a stainless steel reaction kettle lined ...

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Abstract

The invention discloses a BiVO4 / Bi2WO6 composite semiconductor material as well as a hydrothermal preparation method and an application thereof. The nominal composition of the BiVO4 / Bi2WO6 composite semiconductor material is (1-x) BiVO4 / xBi2WO6, wherein x is 5-95mol%. The composite semiconductor material prepared by the method has the advantages of good dispersity, controlled crystal structure and morphology, large special surface area and very good adsorption effect on organic dyestuff methylene blue, high visible-light response activity, good chemical stability and the like. The preparation method has the advantages of being simple in preparation technology, easy in obtaining of raw materials, low in energy consumption and environment-friendly and beneficial to mass production.

Description

technical field [0001] The invention belongs to the technical field of new materials and environmental protection chemical industry, and relates to a BiVO 4 / Bi 2 WO 6 Compound semiconductor material and its hydrothermal preparation method. Background technique [0002] Energy crisis and environmental problems are the most serious problems in this century, especially the environmental problems caused by toxic and refractory organic pollutants (such as halogenated substances, pesticides, dyes, etc.) have become major problems affecting human survival and health. Photocatalysis has the characteristics of mild reaction conditions, strong oxidation, clean and environmentally friendly, and no secondary pollution. It has been developed rapidly, especially in sewage treatment and solar energy conversion. [0003] At present, the most widely used in the field of photocatalysis is TiO 2 base catalyst. TiO 2 Non-toxic and non-polluting, it can be sterilized by ultraviolet light...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/31C02F1/30C02F1/28C02F103/30
CPCY02W10/37
Inventor 缪菊红徐健仲鹏鹏姜颖锋雍海波
Owner NANJING UNIV OF INFORMATION SCI & TECH
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