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A preparation method of high-purity silicon oxide/silicon carbide nano chain heterostructure

A heterostructure and nanochain technology, applied in chemical instruments and methods, single crystal growth, crystal growth, etc., can solve the problem of low purity of SiC/SiOx nanochain heterostructures, and achieve size distribution and morphology. effect of regulation

Inactive Publication Date: 2015-11-25
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the SiC / SiOx nanochain heterostructures prepared by these methods generally have the problem of low purity.

Method used

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  • A preparation method of high-purity silicon oxide/silicon carbide nano chain heterostructure
  • A preparation method of high-purity silicon oxide/silicon carbide nano chain heterostructure
  • A preparation method of high-purity silicon oxide/silicon carbide nano chain heterostructure

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Experimental program
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Effect test

Embodiment 1

[0024] Weigh 2.0 g of polysilazane (PSN) and 3.0 g of polyvinylpyrrolidone (PVP) and dissolve in 11 g of absolute ethanol, stir and mix at room temperature for 6 hours to obtain a microemulsion with uniform composition. After the microemulsion was allowed to stand, it was incubated at 200° C. for 30 minutes under an air atmosphere to obtain a solid organic precursor. The solid organic precursor is then subjected to 99% Al 2 o 3 In the crucible, the top of the crucible is covered with a layer of carbon paper (for depositing SiC / SiOx nano-chain heterostructures) and then placed in a common tubular atmosphere sintering furnace. The temperature was raised to 1400°C at a rate of 5°C / min, and held for 2 hours for high-temperature pyrolysis, and then cooled with the furnace. Typical scanning electron microscopy (SEM) images of the as-prepared SiC / SiOx nanochain heterostructure at different magnifications are shown in figure 1 It is shown that the prepared material is a high-purity...

Embodiment 2

[0026] Weigh 2.0 g of PSN and 4.0 g of PVP and dissolve them in 10 g of absolute ethanol, stir and mix at room temperature for 6 hours to obtain a microemulsion with uniform composition. After the microemulsion was allowed to stand, it was incubated at 200° C. for 30 minutes under an air atmosphere to obtain a solid organic precursor. The solid organic precursor is then subjected to 99% Al 2 o 3 In the crucible, cover the top of the crucible with a layer of carbon paper and place it in an ordinary tubular atmosphere sintering furnace. Under the protection of a 0.1MPa 99.95% Ar atmosphere, the temperature is raised from room temperature to 1400°C at a rate of 5°C / min, and kept for 2 Hours of high temperature pyrolysis, and then cool with the furnace. Typical scanning electron microscope (SEM) images of the as-prepared SiC / SiOx nanochain heterostructure at different magnifications are shown in Figure 4 As shown, it shows that the prepared material is a high-purity SiC / SiOx n...

Embodiment 3

[0028] Weigh 2.0 g of PSN and 5.0 g of PVP and dissolve them in 9 g of absolute ethanol, stir and mix at room temperature for 6 hours to obtain a microemulsion with uniform composition. After the microemulsion was allowed to stand, it was incubated at 200° C. for 30 minutes under an air atmosphere to obtain a solid organic precursor. The solid organic precursor is then subjected to 99% Al 2 o 3 In the crucible, cover the top of the crucible with a layer of carbon paper and place it in an ordinary tubular atmosphere sintering furnace. Under the protection of a 0.1MPa 99.95% Ar atmosphere, the temperature is raised from room temperature to 1400°C at a rate of 5°C / min, and kept for 2 Hours of high temperature pyrolysis, and then cool with the furnace. A typical scanning electron microscope (SEM) of the as-prepared material at different magnifications is shown in Figure 4 As shown, it shows that the prepared material is a high-purity SiC / SiOx nano-chain heterostructure with a ...

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Abstract

The invention relates to a high purity SiC / SiOx nanometer chain-like heterostructure preparation method, which comprises the following specific steps: (1) organic precursor preparing: dissolving polysilazane (PSN) and polyethylene (PVP) in dehydrated alcohol according to a certain ratio, and carrying out stirring mixing at a room temperature to form a micro-emulsion; (2) organic precursor curing: carrying out thermal insulation on the micro-emulsion for 30 min at a temperature of 200 DEG C in an air atmosphere to obtain a solid state organic precursor; and (3) high temperature pyrolysis: placing the solid state organic precursor in a common tube type atmosphere sintering furnace to carry out high temperature pyrolysis for a certain time at a certain pyrolysis temperature under a protection atmosphere to obtain a SiC / SiOx nanometer chain-like heterostructure. With the present invention, preparation of the high purity SiC / SiOx nanometer chain-like heterostructure having a perfect structure, regulation and control of morphology and size distribution can be achieved, and potential application prospects are provided in the field of optoelectronic nanometer devices and the like.

Description

technical field [0001] The invention relates to a preparation method of a high-purity silicon oxide / silicon carbide nano-chain heterostructure, belonging to the technical field of material preparation. Background technique [0002] SiC semiconductor low-dimensional nanomaterials have excellent electrical properties such as wide band gap, high breakdown voltage, high thermal conductivity, high electron mobility and high electron drift rate, and can be used in harsh working environments such as high temperature, high frequency, high power , optoelectronics and radiation-resistant devices and other fields have attractive application prospects. [0003] SiC nano-heterostructures can obtain unique and rich physical and chemical properties that pure SiC low-dimensional nanomaterials do not have, and have recently attracted widespread attention. Compared with SiC fiber materials and low-dimensional nanomaterials with ordinary structures, SiC / SiOx has a unique reinforcement effect ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B1/10C30B29/62
Inventor 杨为佑侯慧林王霖
Owner NINGBO UNIVERSITY OF TECHNOLOGY
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