Grapheme nanometer stripe field-effect tube of three-material heterogeneous grid structure

Abstract

The invention discloses a grapheme nanometer stripe field-effect tube of a three-material heterogeneous grid structure. A conducting channel (1), a source region (2) and a drain region (3) of the field-effect tube are all made of grapheme nanometer stripe materials. Besides the conducting channel (1), the source region (2) and the drain region (3), a grid oxide layer (4) is generated by methods of atomic deposition and the like, a metal electrode layer is reprecipitated outside the grid oxide layer (4) to serve as a grid (G) of the grapheme nanometer stripe field-effect tube of the three-material heterogeneous grid structure, and the grid (G) is made of conducting metal with three different work functions to form the heterogeneous grid of the grapheme nanometer stripe field-effect tube of the three-material heterogeneous grid structure. When the work functions of three materials gradually decrease from a source to a drain, or when a middle work function is the maximum and a work function close to the side of the drain is minimum, the structure can effectively improve performance, and the field-effect tube has lower leakage currents and a higher current switching ratio, and can suppress a drain induced barrier lowering (DIBL) effect.

Description

technical field [0001] The invention relates to the field of graphene nano-ribbon field effect tubes, in particular to the optimization of the structure of the graphene nano-ribbon device to the performance of the device. Background technique [0002] Graphene is a planar material consisting of carbon atoms through sp 2 It is composed of chemical bonds to form a honeycomb arrangement, and it is the only planar material found so far that maintains a stable two-dimensional structure at room temperature. At present, silicon nano-devices have almost reached their limits, and it is difficult to further improve their performance. Thanks to its high carrier mobility, excellent mechanical properties and thermal stability, graphene can well overcome the limitations of silicon material devices when their performance is further improved, and is considered to be the Materials that can replace silicon-based devices in the future. [0003] Graphene nanoribbons can be formed by etching ...

AI Technical Summary

Problems solved by technology

[0007] Technical problem: the purpose of the present invention is to solve the bipolar effect that traditional graphene nanostrip field effect transistors will have, and as the size of the device continues to shrink, there will be a short channel effect that will cause a decline in device performance. The advantages of the mass gate device, three metals with different work functions are used for the gate to form the heterogeneous gate of the MOS, and a graphene nanostrip field effect transistor with a three-material heterogeneous gate structure is proposed

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