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A kind of network low energy level p-type polymer semiconductor material and its preparation method and application

A compound and reaction technology, applied in the field of reticulated low-energy p-type polymer semiconductor materials and their preparation and application, can solve the problems of few reports on two-dimensional reticulated polymer materials, and achieve cheap raw materials and good repeatability. , the effect of extending the scope of application

Active Publication Date: 2015-10-28
孟鸿
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Now the mainstream of market research and development is one-dimensional linear polymer materials, and there are few reports on two-dimensional network polymer materials.

Method used

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  • A kind of network low energy level p-type polymer semiconductor material and its preparation method and application
  • A kind of network low energy level p-type polymer semiconductor material and its preparation method and application
  • A kind of network low energy level p-type polymer semiconductor material and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] Example 1. Preparation of poly 1,2,5,6-tetrathienyl-3,4-diphenyldithienoacene (PTTDPT) represented by formula 8

[0069]

[0070] Formula 8

[0071] The reaction equation is as figure 1 shown.

[0072] (1) Synthesis of 1-methyl-2,5-dithienyl-3,4-benzophenonylpyrrole (Formula 1)

[0073] In a 150mL two-necked flask, vacuum argon. Then add 80mL of glacial acetic acid and 2.69g (10mmol) of N-methyl-N-benzoylphenylglycine in sequence, stir at room temperature for 30min, then add 2.64g (11mmol) of 1,2-dithienoylacetylene dropwise, heat up to reflux and stir 5h, terminate the reaction. Wash with water and saturated sodium bicarbonate solution in sequence, and filter to obtain 3.85 g (yield: 80%) of a tan product, which is the compound shown in Formula 1.

[0074] (2) Synthesis of N-methyl-2,5-dithienyl-3,4-diphenylthienopyrrole (Formula 2)

[0075] In a 250mL two-necked flask, vacuum argon. Then add 120mL of benzene and 4.51g (10mmol) of 1-methyl-2,5-diphenyl-3,4-di...

Embodiment 2

[0089] Example 2. Thin film field effect device and performance of poly 1,2,5,6-tetrathienyl-3,4-diphenyldithienoacene (PTTDPT)

[0090] (1) Preparation of semiconductor devices

[0091] Silicon wafer cleaning: Cut the silicon wafer with the silicon dioxide inorganic insulating layer into small pieces of suitable size, put it in a beaker, add a mixed solvent of hydrogen peroxide and concentrated sulfuric acid with a ratio of about 3:7, and heat it in an electric furnace for about 40 minutes , Pour off the solvent acid solution, rinse off the residual concentrated sulfuric acid and hydrogen peroxide with deionized water, then use deionized water and isopropanol to sonicate for about 10 minutes, and finally blow dry quickly with nitrogen.

[0092] Device preparation: PTPTDTP was deposited on a silicon wafer with 300nm silicon dioxide by spin coating, the solution used was 2mg / ml toluene solution, the speed was 3000 rpm, and the thickness of the organic semiconductor layer obtain...

Embodiment 3

[0096] Example 3. Preparation of the compound represented by formula 9 poly-1,2,3,45,6-hexaphenyldithienoacene (PHPDPT)

[0097]

[0098] Formula 9

[0099] (1) Synthesis of 1-methyl-2,5-diphenyl-3,4-di-p-bromobenzophenonylpyrrole (Formula 1’)

[0100] In a 150mL two-necked flask, vacuum argon. Then add glacial acetic acid 80mL N-methyl-N-benzoylphenylglycine 2.69g (10mmol) successively, stir at room temperature for 30min, then add 1,2-di-p-bromobenzoylacetylene 4.31g (11mmol) dropwise, heat up to reflux and stir 5h, terminate the reaction. Wash with water and saturated sodium bicarbonate solution successively, and filter to obtain 4.78 g (80% yield) of a tan product, which is the compound shown in formula 1'.

[0101] (2) Synthesis of N-methyl-2,5-diphenyl-3,4-di-p-bromophenylthienopyrrole (Formula 2')

[0102] In a 250mL two-necked flask, vacuum argon. Then add 120mL of benzene and 5.99g (10mmol) of compound 1' in sequence, raise the temperature to 60°C, stir and add...

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Abstract

The invention discloses a net-shaped low-energy polymer p-type semiconductor material as well as a preparation method and an application thereof. The semiconductor material has the structural formula shown in the formula I, wherein Ar and R are both selected form an alkyl, an aromatic radical or the aromatic radical substituted by the alkyl; the alkyl is a straight chain alkyl or a branched chain alkyl with the carbon atom number ranging from 1 to 16; the aromatic radical is a phenyl, a fluorenyl, a thienyl, the phenyl containing fluorine, a heterocyclic radical containing nitrogen or the heterocyclic radical containing silicon; X and Y are both selected from O, N, S or Se at random; h is a natural number ranging from 1 to 7; m is the natural number ranging from 5 to 100 at random. A compound shown in the formula I can serve as an organic semiconductor photoelectric material used for preparing an organic semiconductor optoelectronic component such as an organic field effect transistor and used as an organic semiconductor material layer in the organic semiconductor optoelectronic component. The organic semiconductor optoelectronic component formed by the compound provided by the invention is high in sensitivity, good in accuracy and good in repeatability.

Description

technical field [0001] The invention relates to a network low energy level p-type polymer semiconductor material and its preparation method and application. Background technique [0002] Organic electronic devices have attracted the attention of academia and industry all over the world for their easy processing, low cost, and high adaptability. As the most basic element of electronic circuits, the development of organic field effect transistors has become a current research hotspot. [0003] Materials are the basis and core of organic electronic devices, and the performance of some organic semiconductor materials has reached a level comparable to that of inorganic semiconductors. For example, the mobility of pentacene (PAN) organic thin film devices has exceeded 5cm 2 V -1 the s -1 (Kelley, T.W.; Muyres, D.V.; Baude, P.F.; Smith, T.P.; Jones, T.D. Mater. Res. Soc. Symp. Proc. 2003, 771, 169.). However, the cost and stability of this material are still far behind that of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08G61/12H01L51/54H01L51/30H01L51/46
CPCY02E10/549
Inventor 孟鸿张小涛苑晓
Owner 孟鸿