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Preparation method of high temperature resistant capacitor

A technology for capacitors and high temperature resistance, which is applied in the direction of capacitors, electrolytic capacitors, capacitor components, etc., can solve problems such as output waveform distortion, capacitor failure, and capacitor leakage current increase, so as to improve electrical performance parameters, improve high temperature resistance, and improve effect of thickness

Active Publication Date: 2016-05-11
CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The operating temperature of tantalum electrolytic capacitors manufactured by this traditional method is usually lower than 125°C, but in industries such as oil drilling, geological exploration, and space vehicles, the operating environment temperature of equipment is often much higher than 125°C, so capacitors are often affected by ambient temperature. If it is too high, it will fail, resulting in distortion of the output waveform, malfunction of the circuit, and even damage to the equipment
For this reason, the applicant proposed a "preparation method of high-temperature electrolytic capacitor anodic oxide film" in the invention patent with the patent number "ZL200810068913.1". Although the working temperature of the capacitor prepared by this method has been greatly improved (It can work normally in the environment of 200°C); but when the working temperature is higher than 200°C (200-230°C), the leakage current of the capacitor will rise sharply, and the normal operation of the circuit cannot be guaranteed

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] 1) The anode tantalum block is immersed in phosphoric acid with a concentration of 1% by volume at 70°C for electrochemical treatment, and the voltage is raised to 1.9 times the rated voltage of the capacitor at a boost current density of 0.06mA / CV;

[0036] 2) Put the electrochemically treated anode tantalum block into water at 60-80°C for 100-120 minutes, take it out and dry it, and put it in a vacuum of 2x10 -3 Heat treatment in a vacuum furnace above Torr at a temperature of 320°C for 60 minutes;

[0037] 3) Soak the heat-treated anode tantalum block in sulfuric acid with a concentration of 38% by mass for 30 minutes;

[0038] 4) The anode tantalum block soaked in sulfuric acid is immersed in an electrolyte solution mixed with phosphoric acid and ethylene glycol at a temperature of 160°C for 2 hours, and the applied voltage is 1.1 times the rated voltage of the capacitor; the electrolyte The volume percent concentration of phosphoric acid in the medium is 15%, the ...

Embodiment 2

[0045] The steps are the same as in Example 1; wherein, the temperature of phosphoric acid in step 1) is 90°C, the concentration of phosphoric acid is 0.1%, the boost current density is 0.65mA / CV, and the voltage is 1.5 times the rated voltage of the capacitor; the heat treatment temperature in step 2) The temperature of the electrolyte in step 4) is 180°C, the electrochemical treatment time is 1 hour, the voltage is 1.4 times the rated voltage of the capacitor, the phosphoric acid concentration in the electrolyte is 1%, and the The concentration of ethylene glycol solution is 70%, and the rest is water; the volume ratio of deionized water to sulfuric acid in step 6) is 2:1; the addition of modifying additive in step 7) is 1 / 1 of the weight of deionized water 10 times; in step 8), the amount of hydrogen suppressor added is 1 / 9 times the weight of deionized water.

Embodiment 3

[0047]The steps are the same as in Example 1; wherein, the temperature of phosphoric acid in step 1) is 80°C, the concentration of phosphoric acid is 0.5%, the boost current density is 0.35mA / CV, and the voltage is 1.7 times the rated voltage of the capacitor; the heat treatment temperature in step 2) 360°C, heat treatment time 45 minutes; the temperature of the electrolyte in step 4) is 175°C, the electrochemical treatment time is 1.5 hours, the voltage is 1.2 times the rated voltage of the capacitor, the phosphoric acid concentration in the electrolyte is 8.5%, and the The concentration of ethylene glycol solution is 62%, and the rest is water; the volume ratio of deionized water to sulfuric acid in step 6) is 3:1; the amount of modified additive added in step 7) is 1 / 8 times the weight of deionized water ; In step 8), the amount of hydrogen suppressant added is 1 / 11 times of the weight of deionized water.

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Abstract

The invention discloses a method for preparing a high-temperature-resistant capacitor, which belongs to a method for manufacturing a capacitor and aims to provide a method for manufacturing a capacitor that can withstand temperatures below 230°C. The method is to immerse the anode tantalum block in phosphoric acid according to the conventional method for electrochemical treatment, then conduct vacuum heat treatment on the anode tantalum block prepared with a dielectric oxide film and then soak it in sulfuric acid, and immerse the anode tantalum block soaked in sulfuric acid in the electrolyte for For the second electrochemical treatment, the anode tantalum blocks that have undergone the second electrochemical treatment are washed and dried for later use; deionized water, sulfuric acid, modified additives, and hydrogen remover are mixed in proportion to prepare an electrolyte, and the electrolyte is mixed with The spare anode tantalum block is packaged in the casing according to the conventional method to obtain a capacitor. The electrolytic capacitor manufactured by the method of the invention can work continuously and normally for 500 hours in a high-temperature environment of 200-230 DEG C, and is an indispensable electronic component in a power filter circuit.

Description

technical field [0001] The invention relates to a method for manufacturing an electrolytic capacitor, in particular to a method for manufacturing a high-temperature resistant capacitor. Background technique [0002] Electrolytic capacitors are one of the most widely used electronic components. At present, the manufacturing method of tantalum electrolytic capacitors is: immerse the anode tantalum block that has been sintered in high temperature vacuum in acidic aqueous solution for electrochemical treatment, so that a layer of tantalum pentoxide dielectric oxide film is formed on the surface of the anode tantalum block, and then the anode The tantalum block is put into a metal shell filled with liquid or gel working electrolyte for welding and packaging, and finally the anode lead wire is welded. The operating temperature of tantalum electrolytic capacitors manufactured by this traditional method is usually lower than 125°C, but in industries such as oil drilling, geological...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/00H01G9/035H01G9/07H01G9/145
Inventor 鄢波张选红王刚潘平华彭丹
Owner CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD