A carbon-based field-effect transistor and its preparation method

Abstract

The invention discloses a carbon-based field effect transistor and a preparing method of the transistor. The carbon-based field effect transistor comprises a semiconductor substrate, an insulating layer formed on the semiconductor substrate, a conductive channel formed on the insulating layer, a source electrode and a drain electrode which are formed at the two ends of the conductive channel respectively, a composite gate dielectric layer formed between the source electrode and the drain electrode and on the conductive channel, and a gate electrode formed on the composite gate dielectric layer. The problem that a gate dielectric film with a high dielectric constant can not directly grow on the conductive channel formed by a carbon-based material by means of atomic layer deposition is solved. Polyvinyl phenol provides a nucleation center for the atomic layer deposition, meanwhile does not cause remarkable decreasing of carrier mobility of the carbon-base material, and does not cause reduction of device performance.

Description

technical field [0001] The invention relates to a field-effect transistor and a preparation method thereof, a carbon-based field-effect transistor and a preparation method thereof, and belongs to the technical field of nanoelectronics. Background technique [0002] Nanoelectronics based on carbon materials, especially those based on carbon nanotubes (CarbonNanotube) and graphene (Graphene), are considered to have great application prospects and great potential to replace silicon-based materials. Since the successful development of carbon nanotubes in 1991 and graphene in 2004, carbon-based electronics has made great progress. Carbon-based electronics have attracted more and more attention because of their small size, high speed, low power consumption, and simple process. [0003] The performance of field effect transistors is affected by two most important factors, one is the material properties, which determine the potential of device performance; the other is the gate die...

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Problems solved by technology

However, no matter which treatment method is used, an additional scattering mechanism will be introduced to the carbon material, which will reduce the carrier mobility and degrade the device performance.

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