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A kind of positioning doping method of nanomaterials

A nanomaterial and nanotube technology, applied in the field of nanomaterial preparation, can solve the problems of affecting physical properties, low preparation temperature, insufficient diffusion energy of doping precursors, etc., and achieves the effects of strong applicability, simple steps and easy implementation.

Active Publication Date: 2016-04-13
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the low preparation temperature of the liquid-phase method (usually lower than 300°C), the diffusion energy provided to the pre-doped precursor is insufficient, and the dopant ions are not easy to enter the nanomaterial and tend to adhere to the surface, thereby affecting the doping of the nanomaterial and its Physical properties after doping

Method used

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  • A kind of positioning doping method of nanomaterials
  • A kind of positioning doping method of nanomaterials
  • A kind of positioning doping method of nanomaterials

Examples

Experimental program
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Effect test

Embodiment 1

[0036] This implementation is the manufacturing process of the dot array on the quartz substrate, and the specific process is as follows:

[0037] Ultrasonic mixing of zinc sulfide nanoparticles and manganese chloride tetrahydrate or aluminum chloride in ethanol at a molar ratio of 100:1, wherein the mass ratio of zinc sulfide to ethanol is 1:25, and the ultrasonic time is 15 minutes, to make a mixed solution; Spin-coat the mixed solution on a 3cm×3cm quartz substrate with a spin-coating rate of 500rpm and a spin-coating time of 30s, then bake it on a hot plate at 120°C for 1min, repeat the above-mentioned spin-coating steps after cooling, and repeat the spin-coating process for 8 times; the mixture coating after spin coating is irradiated with laser, the laser is 1064nm infrared, the sample is placed at an overfocus of 8mm, the laser irradiation power of each point is 5kW, the laser pulse width is 5ms, and the irradiation is repeated for 5 The second time, the irradiation fre...

Embodiment 2

[0040] This embodiment is a manufacturing process of doping a circular pattern on a curved surface, and the specific process is as follows:

[0041] Ultrasonic mixing of zinc sulfide nanoparticles and manganese chloride tetrahydrate or aluminum chloride in ethanol at a molar ratio of 100:1, wherein the mass ratio of zinc sulfide to ethanol is 1:25, and the ultrasonic time is 15 minutes, to make a mixed solution; The mixed solution was drip-coated on the inner and outer walls of a glass beaker with a capacity of 10mL, and heated on a hot plate at 120°C for 5 minutes to dry the solution; the mixture coating after spin coating was irradiated with laser, the laser was 1064nm infrared, The beaker wall was placed at an overfocus of 8mm, the laser irradiation power at each point was 4kW, the laser pulse width was 4ms, the laser output frequency was 15Hz, and the diameter of the circular pattern was 5mm; the sample was ultrasonically cleaned in ethanol for 10s to remove The mixture, w...

Embodiment 3

[0044] This embodiment is a fabrication process of a pattern with a micron feature size, and the specific process is as follows:

[0045]Zinc sulfide nanoparticles and manganese chloride tetrahydrate are ultrasonically mixed in ethanol with a molar ratio of 100:1, wherein the mass ratio of zinc sulfide and ethanol is 1:25, and the ultrasonic time is 15min to make a mixed solution; the mixed solution is spun Coated on a 3cm×3cm silicon wafer substrate, the spin coating rate was 500rpm, the spin coating time was 30s, and then baked on a hot plate at 120°C for 1min to evaporate the ethanol in the solution; coat the mixture after spin coating Carry out laser irradiation, the laser is 1064nm infrared, the sample is placed at an overfocus of 8mm, the laser irradiation power of each point is 2kW, and the laser pulse width is 2ms; the sample is placed in ethanol and ultrasonically cleaned for 10s to remove the The irradiated mixture forms a luminous point with a diameter of 1 mm; use ...

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Abstract

The invention discloses a positioning and doping method for a nanomaterial. The positioning and doping method comprises the following steps: uniformly mixing the nanomaterial with a doping precursor in a solution, applying a mixture to a substrate and drying to form a mixture layer on the surface of the substrate; performing positioning irradiation on the mixture layer by pulse laser to enable doping elements to be doped with the nanomaterial to form a nanomaterial-doped pattern. According to the positioning and doping method, the doping operation and the pattern preparation of the nanomaterial are achieved in one step through the fixed-point irradiation and the doping effect of the pulse laser; the method provided by the invention can be applied to various fields of light-emitting diodes, field electron emission devices, X-ray imaging, fluorescent labels and the like.

Description

technical field [0001] The invention relates to the field of preparation of nanometer materials, in particular to a method capable of realizing doping and positioning of nanometer materials on a substrate. technical background [0002] Doped nanomaterials have attracted extensive attention due to their different properties from bulk nanomaterials. Through doping, the electrical, optical and magnetic properties of nanomaterials can be changed, making nanomaterials have a wider application prospect. On the other hand, positioning and distributing doped nanomaterials on a specific substrate is crucial to realize the functional application of doped nanomaterials. [0003] At present, the doping methods of nanomaterials mainly include high-temperature calcination method and solution doping method. The high-temperature calcination method is a process in which the matrix material and the dopant precursor are calcined together at a high temperature (temperature above 1000 ° C), an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B3/00B82Y40/00
Inventor 佘峻聪张振锋邓少芝许宁生
Owner SUN YAT SEN UNIV