Preparation method and use of nano-SiC whisker
A whisker and carbon source technology, which is applied in the field of preparing high-quality silicon carbide whiskers, can solve the problems of limited yield of SiC whiskers, and achieve the effects of improving purity, improving industrial production capacity, and optimizing yield
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example 1
[0029] Example 1 : Preparation of smooth SiC whiskers
[0030] 3 grams of commercial carbon source and 3 grams of lime were mixed uniformly by ball milling (the ratio of ball to material is 20:1). The mixture was molded under 300MPa pressure, put into an atmosphere furnace, heated to 1500°C at a rate of 10°C / min, and kept at this temperature for 200 minutes, after cooling to room temperature, the product was collected. The product was heat treated (700°C) in air for 60 minutes. Finally, purified SiC whiskers are obtained.
example 2
[0031] Example 2 : Preparation of Beaded SiC Whiskers
[0032] 3 grams of commercial carbon source and 5 grams of lime were mixed uniformly by ball milling (the ratio of ball to material was 20:1). The mixture was molded under 300MPa pressure, put into an atmosphere furnace, heated to 1500°C at a rate of 10°C / min, and kept at this temperature for 100 minutes, and the product was collected after cooling to room temperature. The product was heat treated (700°C) in air for 60 minutes. Finally, purified beaded SiC whiskers were obtained.
example 3
[0033] Example 3 : SiC whisker dispersion system
[0034] Disperse SiC whiskers in water by an ultrasonic disperser, and it is worth SiC whisker dispersion liquid. Add 0.06 g of SiC whiskers into 150 g of water, and disperse them through ultrasonic vibration to form a whisker dispersion.
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