Hydride vapor deposition device and method for improving thickness distribution uniformity of multiple-piece epitaxial materials
A hydride gas phase and thickness distribution technology, which is applied in the manufacture of electrical components, discharge tubes, semiconductors/solid-state devices, etc., can solve problems such as the inability to meet the requirement that the thickness uniformity of the chip is less than ±5%, and achieve improved utilization and High production efficiency, strong economical practicability, and high utilization
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[0060] The technical solution of the first embodiment:
[0061] 1. Surface pretreatment of sapphire substrate: Place a commercially available sapphire substrate that can be directly epitaxially placed in a MOCVD equipment, and pass a protective atmosphere, including but not limited to nitrogen, ammonia, inert gas, hydrogen and other gases, at a temperature of 1000 ~1200℃, keep for 10~120 minutes;
[0062] 2. MOCVD template preparation: After pretreatment of the sapphire substrate surface, the temperature is reduced to 550-600°C, and a low-temperature buffer layer is grown with a thickness of 30-60nm. The low temperature buffer layer is beneficial to release the stress caused by the epitaxy of the heterogeneous substrate. Then the temperature is raised to 900~1100℃ to grow a high temperature GaN / sapphire composite substrate with a thickness of 3~6μm;
[0063] 3. HVPE secondary epitaxy high-quality film: attach 3 GaN / sapphire templates grown by MOCVD Figure 5 Placed on the front sid...
Example Embodiment
[0064] The technical solution of the second embodiment:
[0065] 1. Sapphire substrate surface pretreatment: Place the commercially available sapphire substrate that can be directly epitaxially placed in the MOCVD equipment, and pass it into a protective atmosphere, including but not limited to oxygen, nitrogen, ammonia, inert gas, hydrogen and other gases, The temperature is 1000~1200℃, and the heat preservation is 10~120 minutes;
[0066] 2. MOCVD template preparation: After the surface pretreatment of the sapphire substrate, the temperature is lowered to 550-600℃, and a low-temperature buffer layer is grown with a thickness of 30-60nm. The low temperature buffer layer is beneficial to release the stress caused by the epitaxy of the heterogeneous substrate. Then the temperature is raised to 900~1100℃ to grow a high temperature GaN / sapphire template with a thickness of 3~6μm;
[0067] 3. HVPE secondary epitaxy high-quality film: attach 7 GaN / sapphire templates grown by MOCVD Imag...
Example Embodiment
[0068] The technical solution of the third embodiment:
[0069] 1. Surface pretreatment of sapphire substrate: Place a commercially available sapphire substrate that can be directly epitaxially placed in a MOCVD equipment and pass into a protective atmosphere, including but not limited to oxygen, nitrogen, ammonia, inert gas, hydrogen, and hydrogen chloride, etc. Gas, temperature 1000~1200℃, keep for 10~120 minutes;
[0070] 2. MOCVD template preparation: After the surface pretreatment of the sapphire substrate, the temperature is lowered to 550-600℃, and a low-temperature buffer layer is grown with a thickness of 30-60nm. The low-temperature buffer layer is beneficial to release the stress caused by the epitaxy of the heterogeneous substrate. Then the temperature is raised to 900~1100℃ to grow a high temperature GaN / sapphire template with a thickness of 3~6μm;
[0071] 3. HVPE secondary epitaxial high-quality film: attach 19 GaN / sapphire templates grown by MOCVD Figure 7 Placed o...
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