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Hydride vapor deposition device and method for improving thickness distribution uniformity of multiple-piece epitaxial materials

A hydride gas phase and thickness distribution technology, which is applied in the manufacture of electrical components, discharge tubes, semiconductors/solid-state devices, etc., can solve problems such as the inability to meet the requirement that the thickness uniformity of the chip is less than ±5%, and achieve improved utilization and High production efficiency, strong economical practicability, and high utilization

Active Publication Date: 2013-12-18
SINO NITRIDE SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But when using this structure to grow three substrates (attached image 3 ), the thick film belt changes from circular to annular, adjust the flow field of metal precursor gas, nitride gas and ID gas in the reaction zone, when the thick film belt is moved to the center of the substrate, the thickness uniformity of the epitaxial layer is the best, But its uniformity can only reach about ±15% (see attached Figure 4 ), which is far from meeting the requirement that the thickness uniformity in the chip is less than ±5% in the subsequent device preparation

Method used

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  • Hydride vapor deposition device and method for improving thickness distribution uniformity of multiple-piece epitaxial materials
  • Hydride vapor deposition device and method for improving thickness distribution uniformity of multiple-piece epitaxial materials
  • Hydride vapor deposition device and method for improving thickness distribution uniformity of multiple-piece epitaxial materials

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Embodiment 1

[0060] The technical scheme of embodiment one:

[0061] 1. Surface pretreatment of sapphire substrate: Place a commercially purchased sapphire substrate that can be directly epitaxy in MOCVD equipment, and pass it into a protective atmosphere, including but not limited to nitrogen, ammonia, inert gas, hydrogen and other gases, at a temperature of 1000 ~1200℃, keep warm for 10~120 minutes;

[0062] 2. Preparation of MOCVD template: After the surface of the sapphire substrate is pretreated, the temperature is lowered to 550-600° C., and a low-temperature buffer layer is grown with a thickness of 30-60 nm. The low-temperature buffer layer is conducive to releasing the stress generated by the epitaxy of the heterogeneous substrate. Then raise the temperature to 900-1100°C to grow a high-temperature GaN / sapphire composite substrate with a GaN thickness of 3-6 μm;

[0063] 3. HVPE secondary epitaxial high-quality thin film: 3 pieces of MOCVD-grown GaN / sapphire templates are attach...

Embodiment 2

[0064] The technical scheme of embodiment two:

[0065] 1. Surface pretreatment of sapphire substrate: Place a commercially purchased sapphire substrate that can be directly epitaxy in MOCVD equipment, and pass it into a protective atmosphere, including but not limited to oxygen, nitrogen, ammonia, inert gas, hydrogen and other gases, Temperature 1000~1200℃, keep warm for 10~120 minutes;

[0066] 2. Preparation of MOCVD template: After the surface of the sapphire substrate is pretreated, the temperature is lowered to 550-600° C., and a low-temperature buffer layer is grown with a thickness of 30-60 nm. The low-temperature buffer layer is conducive to releasing the stress generated by the epitaxy of the heterogeneous substrate. Then raise the temperature to 900-1100°C to grow high-temperature GaN / sapphire template, the thickness of GaN is 3-6μm;

[0067] 3. HVPE secondary epitaxial high-quality thin film: 7 GaN / sapphire templates grown by MOCVD are attached Figure 6 The pos...

Embodiment 3

[0068] The technical scheme of embodiment three:

[0069] 1. Surface pretreatment of sapphire substrate: Place a commercially purchased sapphire substrate that can be directly epitaxy in MOCVD equipment, and pass it into a protective atmosphere, including but not limited to oxygen, nitrogen, ammonia, inert gas, hydrogen and hydrogen chloride, etc. Gas, temperature 1000~1200℃, keep warm for 10~120 minutes;

[0070] 2. Preparation of MOCVD template: After the surface of the sapphire substrate is pretreated, the temperature is lowered to 550-600° C., and a low-temperature buffer layer is grown with a thickness of 30-60 nm. The low-temperature buffer layer is conducive to releasing the stress generated by the epitaxy of the heterogeneous substrate. Then raise the temperature to 900-1100°C to grow high-temperature GaN / sapphire template, the thickness of GaN is 3-6μm;

[0071] 3. HVPE secondary epitaxial high-quality thin film: 19 GaN / sapphire templates grown by MOCVD are attached...

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Abstract

The invention discloses a hydride vapor deposition device and method for improving thickness distribution uniformity of multiple-piece epitaxial materials. The method is used for improving growth uniformity of a large area of multiple-piece GaN thin-film materials. According to the method, a source gas conveying pipeline system of a system is improved, a plurality of sets of concentric circle precursor gas conveying systems formed by a metal precursor gas conveying pipeline, an inert diluent gas conveying pipeline and a nitride precursor conveying pipeline are designed according to the array of a plurality of substrates, therefore, the total distribution probabilities of reaction precursor gases on the surfaces of the substrates can be basically consistent, thus, the thickness uniformity of epitaxial layer thin films of the substrates can be adjusted, and the use ratio of source materials can be improved. The method is simple in process and easy to control, a plurality of pieces can be grown at the same time through one furnace, GaN self-supported substrates for homoepitaxy can be manufactured on a large scale at low cost, and the requirements for optical / microelectronic devices with high photoelectric properties can be met.

Description

technical field [0001] The invention relates to the field of optoelectronic materials and devices, in particular to a method for improving the uniformity of thickness within and between sheets of epitaxial materials grown in one furnace by adjusting the flow field required for growth by improving a vertical hydride vapor phase epitaxy device. Background technique [0002] As an important direct bandgap wide bandgap semiconductor material, GaN-based III-V nitrides are widely used in optoelectronic devices such as light-emitting diodes (LEDs), laser diodes (LDs) and ultraviolet light detectors, as well as microelectronic power devices such as microwaves and power electronics. It has broad application prospects in the field of devices. [0003] Metal Organic Chemical Vapor Deposition (MOCVD) and Hydride Vapor Phase Epitaxy (HVPE) are currently more commonly used epitaxy techniques for preparing GaN materials. Now the MOCVD multi-chip machine technology has developed relatively...

Claims

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Application Information

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IPC IPC(8): H01J37/32H01L21/02H01L21/205
Inventor 刘南柳张国义吴洁君李文辉刘鹏童玉珍
Owner SINO NITRIDE SEMICON
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