Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Alkali metal doping method in mass production of copper indium gallium selenide thin film solar cells

A technology of solar cells and copper indium gallium selenide, which is applied in the field of solar cells, can solve the problems that the photoelectric conversion efficiency of copper indium gallium selenide cells cannot be effectively improved, and achieve low cost of devices and production processes, simple operation, and improved fill factor Effect

Active Publication Date: 2016-07-20
ZHEJIANG SHANGYUE OPTOELECTRONICS TECH
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the different solid solubility of sodium to copper, indium, and gallium materials, this method will limit the lattice growth of copper indium selenide while promoting the lattice growth of copper indium selenide, and cannot effectively improve the copper indium selenium lattice growth. Photoelectric Conversion Efficiency of Gallium Selenium Cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Alkali metal doping method in mass production of copper indium gallium selenide thin film solar cells
  • Alkali metal doping method in mass production of copper indium gallium selenide thin film solar cells
  • Alkali metal doping method in mass production of copper indium gallium selenide thin film solar cells

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] In order to make the technical problems, technical solutions and beneficial effects solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0039] Such as figure 1 Shown, illustrate the flowchart of the alkali metal doping method in a kind of thin film material according to an embodiment of the present invention, comprise following process:

[0040] 1. Cleaning is used to provide transparent glass as a substrate;

[0041] 2. Utilize the sputtering process to cover the back electrode Mo layer on the above-mentioned transparent glass substrate;

[0042] 3. Use the spraying process to spray the CIGS precursor on the basis of the previous steps, thereby depositing and forming a light-absorbing layer including co...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided is an alkali metal doping method in the large-scale production of CIGS (copper, indium, gallium, selenium) thin-film solar cells. The method comprises a step of depositing an Mo metal back electrode layer on a glass substrate, a stainless indium substrate or a flexible substrate; a step of preparing a CIGS optical absorption layer; performing alkali metal element doping and deposition on the CIGS optical absorption layer; a step of performing thermal treatment on the alkali metal thin film formed after the deposition so as to make the alkali metal permeate into a CIGS crystal boundary and to improve characteristics of the crystal boundary; a step of cleaning alkali metal residues; a step of depositing a CdS, ZnS or InS buffer layer on the CIGS thin film after the cleaning of the alkali metal residues; and a step of depositing a high-resistance i-ZnO layer and a high-resistance ZnO:Al window layer, and thus a CIGS solar cell is formed. According to the alkali metal doping method, after annealing, the permeation of the alkali metal does not affect the generation of the CIGS crystal lattices; after the permeation of the alkali metal into the CIGS optical absorption layer, filling factors are substantially improved and the cell photoelectric conversion efficiency is improved when the open circuit voltage is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to an alkali metal doping method in large-scale production of copper indium gallium selenium thin film solar cells. Background technique [0002] Copper indium gallium selenide solar cells, that is, CIGS thin film solar cells, are chalcopyrite crystalline thin film solar cells with the best ratio of four elements: Cu (copper), In (indium), Ga (gallium), and Se (selenium). The key technologies that make up the solar panel. Because this product has many advantages such as strong light absorption capacity, good power generation stability, high conversion efficiency, long daytime power generation time, high power generation, low production cost and short energy recovery cycle, CIGS solar cells are already the future of solar cell products. star, can compete with traditional crystalline silicon solar cells. [0003] Alkali metal doping of the CIGS absorbing layer: refers to doping ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 任宇航任宇珂
Owner ZHEJIANG SHANGYUE OPTOELECTRONICS TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com