Porous medical tantalum implant material and preparation method thereof
An implant material, porous tantalum technology, applied in the field of preparation of medical porous metal materials, can solve the problems of lower mechanical properties of products, limited thickness of tantalum coating, uneven pore size, etc., and achieve high porosity and connected porosity , no cytotoxicity, uniform pore effect
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Embodiment 1
[0027] A preparation of a medical porous tantalum implant material, comprising the steps of:
[0028] (1) Etch the graphite carbon skeleton with a porosity of 85% and a pore diameter of 500 μm with dilute hydrochloric acid (hydrochloric acid concentration is 10%) for 10 minutes, wash it with water and ethanol in turn, dry it with nitrogen, and put it into the reaction chamber;
[0029] (2) Put carbon pentachloride powder with a particle size of 400 mesh into the source tank, heat it to 150°C, and pass it into the reaction chamber with high-temperature argon (300°C) as the carrier gas, and the flow rate of the carrier gas is 100ml / min , the temperature of the reaction chamber is 1050°C, and the vacuum degree of the reaction chamber is 10Pa; while the tantalum pentachloride powder is passed into the reaction chamber with argon as the carrier gas, hydrogen is passed into the reaction chamber at a flow rate of 120ml / min, and the reduction reaction is carried out for 4 hours. The t...
Embodiment 2
[0032] A preparation of a medical porous tantalum implant material, comprising the steps of:
[0033] (1) Etch the graphite carbon skeleton with a porosity of 80% and a pore diameter of 400 μm with dilute hydrochloric acid (hydrochloric acid concentration: 10%) for 10 minutes, wash it with water and ethanol in turn, dry it with nitrogen, and place it in the reaction chamber;
[0034] (2) Put carbon pentachloride powder with a particle size of 400 mesh into the source tank, heat it to 200°C, and pass it into the reaction chamber with high-temperature argon (300°C) as the carrier gas, and the flow rate of the carrier gas is 120ml / min , the temperature of the reaction chamber is 950°C, and the vacuum degree of the reaction chamber is 10Pa; while the tantalum pentachloride powder is passed into the reaction chamber with argon as the carrier gas, hydrogen is passed into the reaction chamber at a flow rate of 120ml / min, and the reduction reaction is carried out for 6 hours. The tant...
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