Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing high-purity nanometer copper by using printed circuit board alkaline etching waste liquid

A technology for printed circuit boards and etching waste liquid, applied in nanotechnology and other directions, can solve the problems of low cost performance of recycled materials, limited large-scale use, low recovery rate, etc., to achieve good anti-oxidation performance, not harsh process conditions, high purity effect

Active Publication Date: 2014-01-01
广东致卓环保科技有限公司
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these methods generally have disadvantages such as complex process, low recovery rate, high cost, and low cost performance of recycled products, which limit their large-scale use in this industry.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing high-purity nanometer copper by using printed circuit board alkaline etching waste liquid
  • Method for preparing high-purity nanometer copper by using printed circuit board alkaline etching waste liquid
  • Method for preparing high-purity nanometer copper by using printed circuit board alkaline etching waste liquid

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Take 50 milliliters of alkaline etching waste liquid and put it into two 25 milliliter centrifuge tubes, and centrifuge; after centrifugation, pour the supernatant liquid of the centrifuge tube into a 200 milliliter beaker, add 5 grams of polyvinylpyrrolidone and 5 grams of ten Hexaalkyltrimethylammonium bromide is used as reactant A solution; Preparation contains 0.1 mol / liter hydrazine hydrate, 0.5 mol / liter gram of sodium hydroxide, 50 milliliters of B solution of 1 mol / liter polyethylene glycol; Pour the solution into the three-necked bottle, adjust the temperature of the constant temperature water bath at 80°C, start stirring, and the stirring speed is about 200 rpm, add solution A dropwise into the three-necked bottle, take it out after the reaction and cool it to room temperature; The solution is poured into two 50 ml centrifuge tubes and centrifuged again to collect the substance in the gel state of the lower layer in the centrifuge tube, and the upper layer is r...

Embodiment 2

[0028] Get 50 milliliters of alkaline etching waste liquid and put it into two 25 milliliter centrifuge tubes, and centrifuge; after centrifugation, pour the supernatant liquid of the centrifuge tube into a 200 milliliter beaker, add 8 grams of polyvinylpyrrolidone and 8 grams of ten Hexaalkyltrimethylammonium bromide is used as reactant A solution; Preparation contains 0.5 mol / liter of hydrazine hydrate, 0.5 mol / liter of sodium hydroxide, 50 milliliters of B solution of 1 mol / liter of polyethylene glycol; Pour the B solution into the three-necked bottle, adjust the temperature of the constant temperature water bath at 90°C, start stirring, and the stirring speed is about 200 rpm, add the A solution dropwise into the three-necked bottle, take it out after the reaction and cool it to room temperature; the reaction of cooling to room temperature Pour the solution into two 50ml centrifuge tubes for centrifugation, collect the substance in the gel state in the lower layer of the ce...

example 3

[0030] Get 100 milliliters of alkaline etching waste liquid and put it into two 50 milliliter centrifuge tubes, and centrifuge; after centrifugation, pour the supernatant liquid of the centrifuge tube into a 200 milliliter beaker, add 8 grams of polyvinylpyrrolidone and 8 grams of ten Hexaalkyltrimethylammonium bromide is used as reactant A solution; Preparation contains 0.25 mol / liter hydrazine hydrate, 1.0 mol / liter gram of sodium hydroxide, 50 milliliters of B solution of 2 mol / liter polyethylene glycol; Pour the solution into the three-necked bottle, adjust the temperature of the constant temperature water bath at 90°C, start stirring, and the stirring speed is about 200 rpm, add solution A dropwise into the three-necked bottle, and take out the reaction solution cooled to room temperature after the reaction; Pour into three 50ml centrifuge tubes for centrifugation, collect the gel state substance in the lower layer of the centrifuge tube, and recover the upper layer liquid...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing high-purity nanometer copper by using printed circuit board alkaline etching waste liquid. The method is characterized by including the following steps: a. taking an appropriate amount of alkaline etching waste liquid and putting the liquid into a centrifuge tube to conduct high-speed centrifugation, adding upper-layer clarified liquor in the centrifuge tube into an ammonium hydroxide adjusting solution, and adding a surface active dispersing agent into the solution to obtain a reactant A; b. preparing a solution B containing hydrazine hydrate, sodium hydroxide and a nanometer copper dispersing accelerant, heating and stirring, and adding the reactant A into the solution B dropwise slowly to conduct reaction; c. cooling to the room temperature after the reaction is finished, transferring to the centrifuge tube to conduct high-speed centrifugal separation and collecting lower-layer solution after separation; d. washing the obtained solution containing high-purity nanometer copper by using absolute ethyl alcohol, and after the last washing, transferring an alcoholic solution containing the nanometer copper into a vacuum rotary evaporator to extract nanometer copper powder. The method is easy to operate and free of large energy consumption and can conduct large-scale production under the existing conditions.

Description

technical field [0001] The invention relates to the technical field of methods for extracting nano-metal copper powder, in particular to a method for preparing high-purity nano-copper powder from alkaline etching waste liquid discharged from printed circuit board factories. Background technique [0002] Due to its size in the range of 100 nanometers, nano-copper powder has a larger specific surface area than ordinary copper powder, and it is precisely because of this that nano-copper particles show excellent characteristics in terms of optical properties, catalytic properties, and electrical conductivity. At present, it has been widely used in industrial products with some characteristics to improve product performance. For example, because nano-copper powder is very small and soft, it is a good lubricating additive. Adding it to the lubricating oil used in automobiles can improve the wear resistance of engine cylinders and pistons. Adding nano-copper powder Lubricating oil...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B22F9/24B82Y40/00
Inventor 范小玲李树泉曾德胜高帅
Owner 广东致卓环保科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com