Method for preparing monodisperse spherical nano ZnO

A nano-zinc oxide, monodisperse technology, applied in zinc oxide/zinc hydroxide, nanotechnology, nanotechnology and other directions, can solve the problems of expensive equipment, high production cost, high temperature and high pressure, etc. Effect

Inactive Publication Date: 2014-01-01
CHANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the gas-phase method and liquid-phase method are mainly used to prepare nano-zinc oxide, such as spray pyrolysis method, arc plasma method, sol-gel method, homogeneous precipitation method, hydrothermal method, etc.; The quality is high, but the equipment is expensive, the production cost is high, and the experimental conditions are harsh; compared with the gas-phase method, the liquid-phase method has the advantages of simple process, easy operation, low equipment requirements, and easy mass production. Good activity, precise and controllable product composition, and more industrial prospects; although Shuang Xu et al. synthesized spherical nano-ZnO by hydrothermal method, the particle size is large, reaching micron level, and this method requires high temperature and high pressure, which is not suitable for industrial Production; In this study, we adopted a direct one-step precipitation method, which does not need to obtain the precursor and then calcine the crystals as in the traditional method, but directly uses surfactants in the solution system to control the morphology and particle size of ZnO particles, successfully Preparation of Monodisperse Spherical Nano-ZnO Powder

Method used

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  • Method for preparing monodisperse spherical nano ZnO
  • Method for preparing monodisperse spherical nano ZnO
  • Method for preparing monodisperse spherical nano ZnO

Examples

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Effect test

Embodiment 1

[0024] Prepare 0.4M zinc salt aqueous solution and 4M NaOH aqueous solution; dissolve 15g PEG-6000 in 20mL distilled water, heat and stir until completely dissolved; mix 20mL PEG-6000 solution with 30mL zinc salt solution, place in 250mL In a round-bottomed flask, heat in a water bath at 95°C and stir for 0.5 h; measure 50 mL of NaOH solution, quickly add it to the mixed solution, and at the same time adjust the stirring speed to 600 rpm, keep stirring in a constant temperature water bath at 95°C for 2.5 h, after the reaction is complete, Cool to room temperature, filter, wash with ethanol and distilled water several times, and dry in an oven at 60°C for 6 hours to obtain zinc oxide powder.

Embodiment 2

[0026] Prepare 0.4M zinc salt aqueous solution and 4M NaOH aqueous solution, dissolve 15g PEG-6000 in 20mL distilled water, heat and stir until completely dissolved, mix 20mL PEG-6000 solution with 30mL zinc salt solution, place in 250mL In a round bottom flask, heat in a water bath at 95°C, stir for 0.5h, measure 50mL of NaOH solution, quickly add it to the mixed solution, and at the same time adjust the stirring speed to 700 rpm, keep stirring in a constant temperature water bath at 95°C for 3.5h, after the reaction is complete, Cool to room temperature, filter, wash with ethanol and distilled water several times, and dry in an oven at 60°C for 6 hours to obtain zinc oxide powder.

Embodiment 3

[0028] Prepare 0.4M zinc salt aqueous solution and 4M NaOH aqueous solution, dissolve 8g PEG-6000 in 10.67mL distilled water, heat and stir until completely dissolved, mix 10.67mL PEG-6000 solution with 16mL zinc salt solution, set In a 250mL round bottom flask, heat in a water bath at 95°C, stir for 0.5h, measure 26.675mL of NaOH solution, quickly add it to the mixed solution, and at the same time adjust the stirring speed to 800 rpm, keep stirring in a constant temperature water bath at 95°C for 4h, until the reaction is complete Afterwards, cool to room temperature, filter, wash with ethanol and distilled water several times, and dry in an oven at 60°C for 6 hours to obtain zinc oxide powder.

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Abstract

The invention belongs to the field of semiconductor inorganic materials, and particularly relates to a method for preparing monodisperse spherical nano ZnO. The method particularly comprises the following steps: weighing and dissolving PEG-6000 in distilled water, adding 0.75g of PEG-6000 per 1 ml of distilled water, heating and stirring to enable the PEG-6000 to be completely dissolved; mixing the PEG-6000 solution with 0.4 M of a zinc salt solution, heating in water bath at the temperature of 95 DEG C, and stirring at the same time so as to enable the solutions to be fully mixed; weighing 4 M of a NaOH aqueous solution, adding the aqueous solution into the mixed solution quickly, stirring fiercely at the same time, performing constant temperature bath at the temperature of 95 DEG C, and continuously stirring for 2-4 hours; cooling the mixture to the indoor temperature after completion of reaction, filtering, washing by adopting ethyl alcohol and distilled water, and placing the obtained mixture into a drying oven for drying so as to obtain white ZnO powder. The method has the advantages that the zinc salt, NaOH and the PEG-6000 are used as the raw materials, a one-step method is adopted to prepare spherical nano ZnO with the particle diameter of 30 nanometers, the ZnO is good in dispersity and narrow in particle size distribution, and the method has the excellent prospect for preparing ZnO voltage-dependent functional materials.

Description

technical field [0001] The invention belongs to the field of semiconductor inorganic materials, and in particular relates to a method for preparing monodisperse spherical nanometer zinc oxide. Background technique [0002] ZnO is an important multifunctional semiconductor material, which has a direct bandgap width of 3.37eV and a large exciton binding energy of 60meV. At the nanometer scale, the specific surface area of ​​the particles increases sharply, making nano-ZnO exhibit the characteristics of bulk materials. The surface effect, quantum size effect, etc. that do not have, exhibit many special properties; in addition, ZnO is the leader among semiconductor oxides due to its excellent performance, and is widely used in gas sensors, piezoresistors and various optical devices; usually, ZnO Anisotropic growth is easy to form non-spherical low-dimensional nanostructures, such as nanowires, nanotubes, nanobelts, etc., and it is difficult to form spherical ZnO particles. For ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02B82Y30/00B82Y40/00
Inventor 王茂华周芙张波
Owner CHANGZHOU UNIV
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