Sintered compact and amorphous film

A technology of sintered body and amorphous film, applied in the directions of oxide conductors, non-metallic conductors, ion implantation plating, etc., can solve the problems of small refractive index, small specific resistance, and different composition systems

Inactive Publication Date: 2014-01-22
JX NIPPON MINING & METALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this material is a crystalline film, and the effect of an amorphous film as in the present invention described later cannot be obtained.
In addition, Patent Document 5 discloses an amorphous transparent conductive film with a small refractive index and low specific resistance, but it is different from the composition system of the present invention, and there is a problem that the refractive index and the resistance value cannot be adjusted at the same time.

Method used

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  • Sintered compact and amorphous film
  • Sintered compact and amorphous film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0067] Prepare ZnO powder, Al 2 o 3 Powder, SiO 2 powder and B as a low-melting oxide 2 o 3 powder. Then, these powders were formulated into the proportions described in Table 1, and after they were mixed, the powder materials were placed in a vacuum at a temperature of 1100°C and a pressure of 250kgf / cm 2 Hot pressing sintering under the conditions.

[0068] Then, this sintered body was finished into a sputtering target shape by machining. The volume resistance and relative density of the obtained target were measured, and the results are shown in Table 1. The relative density reached 99.3%, the volume resistance was 2.1 mΩ·cm, and stable DC sputtering was possible.

[0069] In addition, sputtering was performed using the above-mentioned finished target. Set to DC sputtering, sputtering power 500W, containing 2 volume % O 2 Under the sputtering condition of the Ar gas pressure of 0.5Pa, the film is formed as film thickness. The amorphousness, refractive index (wavele...

Embodiment 2

[0072] Prepare ZnO powder, Ga 2 o 3 Powder, SiO 2 powder and B as a low-melting oxide 2 o 3 powder. Then, these powders were formulated into the proportions described in Table 1, and after they were mixed, the powder materials were heated in an argon atmosphere at a temperature of 1100° C. and a pressure of 250 kgf / cm 2 Hot pressing sintering under the conditions. Then, this sintered body was finished into a sputtering target shape by machining. The volume resistance and relative density of the obtained target were measured, and the results are shown in Table 1. The relative density reached 98.5%, the volume resistance was 1.6 mΩ·cm, and stable DC sputtering was possible.

[0073] In addition, sputtering was performed under the same conditions as in Example 1 using the above-mentioned finished target, and the amorphous property, refractive index (wavelength: 550 nm), volume resistivity, and extinction coefficient (wavelength: 450 nm) of the film-formed sample were measur...

Embodiment 3

[0075] Prepare ZnO powder, Al 2 o 3 Powder, GeO 2 powder and B as a low-melting oxide 2 o 3 powder. Then, these powders were formulated into the proportions described in Table 1, and after they were mixed, the powder materials were heated in an argon atmosphere at a temperature of 1100° C. and a pressure of 250 kgf / cm 2 Hot pressing sintering under the conditions. Then, this sintered body was finished into a sputtering target shape by machining. The volume resistance and relative density of the obtained target were measured, and the results are shown in Table 1. The relative density reached 98.6%, the volume resistance was 3.6 mΩ·cm, and stable DC sputtering was possible.

[0076] In addition, sputtering was performed under the same conditions as in Example 1 using the above-mentioned finished target, and the amorphous property, refractive index (wavelength: 550 nm), volume resistivity, and extinction coefficient (wavelength: 450 nm) of the film-formed sample were measur...

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Abstract

The invention provides a sintered compact and an amorphous film. The sintered compact is characterized by comprising zinc (Zn), trivalent metal elements, germanium (Ge) and / or silicon (Si), and oxygen (O), wherein, if the total content of the trivalent metal elements is A mol% in terms of oxides and the total content of Ge and or Si is B mol% in terms of GeO2 and / or SiO2, 15<=A+B<=70. According to the invention, the sintered compact has low bulk resistance and is capable of performing DC sputtering. The sintered compact can be used to form the amorphous film with a low refractive index.

Description

technical field [0001] The present invention relates to a sintered body capable of obtaining a transparent conductive film with good visible light transmittance and conductivity, and an amorphous film with a low refractive index produced using the sintered body. Background technique [0002] Conventionally, as a transparent conductive film, an ITO (Indium-Tin-oxide) film obtained by adding tin to indium oxide is transparent and has excellent conductivity, and has been used in a wide range of applications such as various displays. However, since indium, which is a main component, is expensive, this ITO has a problem in terms of manufacturing cost. [0003] In view of the above circumstances, a film using, for example, zinc oxide (ZnO) has been proposed as a substitute for ITO. A film containing zinc oxide as a main component has the advantage of being inexpensive. It is known that this film has a phenomenon in which the conductivity is enhanced due to the oxygen deficiency ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/01C23C14/34C23C14/08
CPCC04B35/14C04B35/453C04B35/645C04B2235/3286C04B2235/3409C04B2235/3418C23C14/081C23C14/086C23C14/34C04B35/64C04B2235/3284C04B2235/3287H01B1/08
Inventor 奈良淳史
Owner JX NIPPON MINING & METALS CO LTD
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