Method for ultrasonic cleaning of polished sapphire substrate wafer

A sapphire substrate, ultrasonic cleaning technology, applied in the direction of using liquid cleaning methods, cleaning methods and utensils, chemical instruments and methods, etc., can solve the problem of consumption of chemicals and deionized water, many steps of sapphire cleaning technology, and volatile Environmental and other issues, to achieve the effect of saving cleaning time, improving cleaning effect and cleaning efficiency, and reducing surface roughness

Active Publication Date: 2014-01-29
江西伟嘉创展企业管理有限公司
View PDF5 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The purpose of the present invention is to solve the problem that the existing sapphire cleaning technology has many steps, consumes a lot of chemicals and deionized water, and the use of strong acid, strong alkali and strong oxidant is not only dangerous to operate, but also volatile to cause environmental pollution and physical injury to operators. To provide an ultrasonic cleaning method for sapphire substrate wafers after polishing, which avoids the use of strong acid and strong alkali, reduces environmental pollution, and has high cleaning efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] A kind of ultrasonic cleaning method after polishing of sapphire substrate wafer, described ultrasonic cleaning method comprises the following steps:

[0035]a) At 45°C, immerse the polished sapphire substrate material in an ultrasonic cleaning machine equipped with a mixed cleaning solution for ultrasonic cleaning for 10 minutes, ultrasonic power 1.5kw, frequency 50 KHz, and then perform a second cleaning at a frequency of 100KHz Ultrasonic cleaning for 10 minutes; after the second ultrasonic cleaning, let it stand for 10 minutes, and then perform the third ultrasonic cleaning at a frequency of 35KHz for 5 minutes; the mixed cleaning solution is prepared by FA / O chelating agent and surfactant The volume fraction of FA / O type chelating agent in the mixed cleaning solution is 1%, the volume fraction of the surfactant in the mixed cleaning solution is 1‰, and the solvent is deionized water; Oxyethylene ether and polyoxyethylene secondary alkyl alcohol ether are mixed,...

Embodiment 2

[0043] A kind of ultrasonic cleaning method after polishing of sapphire substrate wafer, described ultrasonic cleaning method comprises the following steps:

[0044] a) At 50°C, immerse the polished sapphire substrate material in an ultrasonic cleaning machine equipped with a mixed cleaning solution for ultrasonic cleaning for 12 minutes, ultrasonic power 1.8kw, frequency 40 KHz, and then perform a second cleaning at a frequency of 90KHz Ultrasonic cleaning for 8 minutes; after the second ultrasonic cleaning, let it stand for 8 minutes, and then perform the third ultrasonic cleaning at a frequency of 45KHz for 3 minutes; the mixed cleaning solution is prepared by FA / O chelating agent and surfactant The volume fraction of FA / O type chelating agent in the mixed cleaning solution is 1.5%, the volume fraction of the surfactant in the mixed cleaning solution is 1.2‰, and the solvent is deionized water; Oxyethylene ether and polyoxyethylene secondary alkyl alcohol ether are mixe...

Embodiment 3

[0052] A kind of ultrasonic cleaning method after polishing of sapphire substrate wafer, described ultrasonic cleaning method comprises the following steps:

[0053] a) At 55°C, immerse the polished sapphire substrate material in an ultrasonic cleaning machine equipped with a mixed cleaning solution for ultrasonic cleaning for 20 minutes, ultrasonic power 2kw, frequency 35KHz, and then perform secondary ultrasonication at a frequency of 80 KHz Cleaning for 5 minutes; after the second ultrasonic cleaning, let it stand for 5 minutes, and then perform the third ultrasonic cleaning at a frequency of 50KHz for 2 minutes; the mixed cleaning solution is made of FA / O chelating agent and surfactant; The volume fraction of FA / O type chelating agent in the mixed cleaning solution is 2%, the volume fraction of surfactant in the mixed cleaning solution is 1.5‰, and the solvent is deionized water; the surfactant used is composed of fatty alcohol polyoxygen Vinyl ether and polyoxyethylen...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for ultrasonic cleaning of a polished sapphire substrate wafer and provides a method for conducting cleaning through ultrasound and a solution to remove particles and metal ions and then conducting cleaning through ultrasound and oxidation liquid to remove organic matters. According to removal of the particles and the metal ions, an FA / O type chelating agent and two kinds of non-ionic surface active agents including JFC and AEO are selected and prepared to mixed liquid in proportion and the ultrasonic action is added so that cleaning can be conducted; anodic oxidation liquid obtained through electrolysis of a diamond film (BDD) is selected to remove organic pollution, the oxidation liquid is high in oxidation function, and therefore most organic matters are resolved. According to the method, comprehensive cleaning of the particles, the organic matters and metal impurities is conducted, the number of steps is small, operation is simple, and the method can satisfy the requirement of the new-period micro-electronic cleaning technology.

Description

technical field [0001] The invention belongs to the cleaning technology of wafer surface after CMP, in particular to an ultrasonic cleaning method after polishing of sapphire substrate wafer. [0002] Background technique [0003] As the third-generation semiconductor material after Si and GaAs, GaN has undoubtedly become a milestone in the development process of the LED chip manufacturing industry. At present, vigorously developing GaN-based LED light-emitting materials has become the development trend and focus of the lighting industry in recent years. Since GaN is difficult to prepare bulk materials, thin films must be grown on other substrate materials, so for the manufacture of GaN-based LED chips, the choice of substrate is the primary consideration. There are many kinds of GaN substrate materials, including sapphire, silicon carbide, silicon, magnesium oxide, zinc oxide, etc. Among many materials, sapphire substrate material has become the preferred material for ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B08B3/12B08B3/08
CPCB08B3/08B08B3/12
Inventor 郑伟艳曾锡强
Owner 江西伟嘉创展企业管理有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap