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Oxide thin film transistor and manufacturing method thereof

A technology of oxide thin film and manufacturing method, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, semiconductor device, etc., and can solve the problem of unstable performance of IGZO thin film transistor

Active Publication Date: 2014-01-29
SHENZHEN DANBANG INVESTMENT GROUP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] But the performance of current IGZO thin film transistors is not stable

Method used

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  • Oxide thin film transistor and manufacturing method thereof
  • Oxide thin film transistor and manufacturing method thereof
  • Oxide thin film transistor and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0032] The stacked oxide semiconductor layer in this embodiment is composed of an IGZO thin film layer (1:1:1:4) and a spacer layer. The spacer layer is an alloy of Hf and Nd, where the atomic number ratio of Nd:Hf is 2%. The spacer layer target and the IGZO (1:1:1:4) target were installed at two different target positions, and the spacer layer and the IGZO thin film layer were stacked by radio frequency sputtering.

[0033] Argon is used as the sputtering gas, the sputtering pressure is between 0.1Pa-10.0Pa, the substrate temperature is maintained at room temperature to 150°C during sample growth, the sputtering power is 40-200W, and the background vacuum of the sputtering chamber is less than 1× 10 -7 Torr, the total thickness of the prepared stacked oxide semiconductor film is 50nm, and the order of sputtering coating is the first IGZO thin film layer (20nm), the hafnium neodymium alloy thin film layer (10nm) and the second IGZO thin film layer (20nm). Anneal in air for 3...

Embodiment 2

[0046] The stacked oxide semiconductor in this embodiment is composed of IGZO (1:1:1:4) and spacer layers therebetween. The spacer layer is an alloy of hafnium oxide and neodymium oxide, where the atomic number ratio of Nd:Hf is 5%. The spacer layer target and the IGZO (1:1:1:4) target were installed on two different target positions, and the spacer layer and the IGZO layer were stacked by radio frequency sputtering.

[0047] Argon is used as the sputtering gas, the sputtering pressure is between 0.1Pa-10.0Pa, the substrate temperature is maintained at room temperature to 150°C during sample growth, the sputtering power is 40-200W, and the background vacuum of the sputtering chamber is less than 1× 10 -7 Torr, the total thickness of the prepared stacked oxide semiconductor film is 60nm, and the sputtering coating sequence is the first IGZO thin film layer (25nm), the hafnium neodymium alloy thin film layer (10nm) and the second IGZO thin film layer (25nm). The stacked films ...

Embodiment 3

[0057] The stacked oxide semiconductor in this embodiment is composed of IGZO thin film layers (1:1:1:4) and spacer layers between the thin film layers. The spacer layer is an alloy of hafnium oxide and neodymium oxide, where the atomic number ratio of Nd:Hf is 1%. The spacer layer target and the IGZO (1:1:1:4) target were installed on two different target positions, and the spacer layer and the IGZO layer were stacked by radio frequency sputtering.

[0058] Argon is used as the sputtering gas, the sputtering pressure is between 0.1Pa-10.0Pa, the substrate temperature is maintained at room temperature to 150°C during sample growth, the sputtering power is 40-200W, and the background vacuum of the sputtering chamber is less than 1× 10 -7 The total thickness of the prepared stacked oxide semiconductor film is 40nm, and the sputtering coating sequence is the first IGZO thin film layer (10nm), the first hafnium neodymium alloy thin film layer (5nm), and the second IGZO thin film ...

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Abstract

The invention discloses an oxide thin film transistor and a manufacturing method of the oxide thin film transistor. The transistor comprises a source electrode, a drain electrode and an IGZO thin film layer and further comprises a hafnium neodymium alloy thin film layer, wherein a first surface of the IGZO thin film layer makes contact with the source electrode and the drain electrode, and the other surface back on to the first surface of the IGZO thin film layer makes contact with the hafnium neodymium alloy thin film layer. The oxide thin film transistor has stable electrical properties.

Description

【Technical field】 [0001] The invention relates to the field of transistors, in particular to an oxide thin film transistor and a manufacturing method thereof. 【Background technique】 [0002] In the past ten years, the liquid crystal display device with silicon-based TFT as the driving unit has achieved rapid development due to its advantages of small size, light weight, and high quality, and has become the mainstream information display terminal. However, with the improvement of people's performance requirements for display device resolution, response speed, and stability, TFTs with silicon materials as the active layer have exposed a series of problems. (generally less than 0.5cm 2 / (Vs)), unable to achieve high-resolution display; the production process of low-temperature polysilicon TFT technology is complicated, the equipment investment is high, and the panel faces insurmountable problems such as poor uniformity, low yield rate, and high production cost. Further develo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/221H01L29/06H01L29/423H01L21/36
CPCH01L29/24H01L29/66969H01L29/7869
Inventor 刘萍
Owner SHENZHEN DANBANG INVESTMENT GROUP
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