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Monoclinic-phase vanadium dioxide epitaxial film and preparation method thereof

A technology of vanadium dioxide and epitaxial thin film, which is applied in the field of monoclinic phase vanadium dioxide epitaxial thin film and its preparation, which can solve the problem of uniformity of gas distribution, relatively large influence of reactor structure, prone to particle problems, and lack of large-area uniformity good and other problems, to achieve a remarkable effect of macroscopic phase transition characteristics

Active Publication Date: 2014-02-05
UNIV OF SCI & TECH OF CHINA
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

This method can prepare a monoclinic vanadium dioxide crystal film with good crystallinity, but the surface of the film is often prone to particle problems, and the large-area uniformity is not good
[0007] The chemical vapor deposition method is to use the chemical reaction of the gaseous precursor substance on the gas phase or gas-solid interface to form a solid deposit on the solid substrate to prepare a monoclinic vanadium dioxide film. This method has high preparation efficiency, but The process is greatly affected by factors such as temperature, gas flow rate, gas flow rate, gas distribution uniformity, and reactor structure, and stability and uniformity have yet to be resolved.

Method used

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  • Monoclinic-phase vanadium dioxide epitaxial film and preparation method thereof
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  • Monoclinic-phase vanadium dioxide epitaxial film and preparation method thereof

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preparation example Construction

[0036] The invention provides a method for preparing a monoclinic vanadium dioxide epitaxial film, which comprises the following steps: in a vacuum condition, a vanadium atom beam and an oxygen atom beam are sprayed onto a substrate for reaction, and epitaxial growth obtains a monoclinic phase two Vanadium oxide epitaxial film.

[0037] The monoclinic vanadium dioxide epitaxial film prepared by the method of the present invention has higher quality and larger size, and has remarkable macroscopic phase transition characteristics.

[0038] All the raw materials of the present invention have no special restrictions on their sources, as long as they are purchased on the market.

[0039] The present invention adopts molecular beam epitaxy method to prepare monoclinic vanadium dioxide epitaxial film. In order to ensure the high quality of the film, it is preferable to clean the substrate first to remove oil and impurities on the surface; the substrate is preferably single crystal Al 2 O 3 ...

Embodiment 1

[0058] The single crystal Al with a diameter of about two inches 2 O 3 The substrate is pretreated, first put it in ethanol, and then use an ultrasonic device to clean for 10 minutes to remove surface oil and impurities, and finally dry with nitrogen, then put it into the sample chamber of the molecular beam epitaxy equipment.

[0059] Single crystal Al 2 O 3 The substrate is transferred to the growth chamber of the molecular beam epitaxy equipment, and the vacuum degree of the growth chamber is 3.0*10 -7 Pa. The substrate was rotated at a constant speed at a rate of 4 revolutions / min, and at the same time, the substrate was heated at a heating rate of 20°C / min, and the temperature was raised to 450°C.

[0060] Then open the oxygen valve to pass in high-purity oxygen with a purity of 99.9999%, adjust the gas flowmeter to keep the oxygen flow at 1.5sccm, turn on the RF radio frequency source, adjust the radio frequency power to fully dissociate the oxygen into a highly reactive oxyge...

Embodiment 2

[0070] Single crystal TiO 2 The substrate is pretreated, first put it in ethanol, and then use an ultrasonic device to clean for 20 minutes to remove surface oil and impurities, and finally dry with nitrogen, then put it into the sample chamber of the molecular beam epitaxy equipment.

[0071] Single crystal TiO 2 The substrate is transferred to the growth chamber of the molecular beam epitaxy equipment, and the vacuum degree of the growth chamber is 2.5*10 -7 Pa, then the substrate is rotated at a constant speed at a rate of 5 revolutions / min, while the substrate is heated at a heating rate of 25°C / min, and the temperature is raised to 430°C.

[0072] Then open the oxygen valve to pass in high-purity oxygen with a purity of 99.9999%, adjust the gas flowmeter to maintain the oxygen flow rate at 1.8sccm, turn on the RF radio frequency source, and adjust the radio frequency power to fully dissociate the oxygen into a highly reactive oxygen atom beam. Open the baffle of the RF source, ...

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Abstract

The invention provides a monoclinic-phase vanadium dioxide epitaxial film and a preparation method thereof. The preparation method comprises the following steps of spraying a vanadium atomic beam and an oxygen atomic beam on a substrate under a vacuum condition for reacting, and carrying out epitaxial growth to obtain the monoclinic-phase vanadium dioxide epitaxial film. The monoclinic-phase vanadium dioxide epitaxial film prepared by the invention is relatively high in quality, relatively large in size and remarkable in macroscopic phase change characteristic.

Description

Technical field [0001] The invention belongs to the technical field of functional film preparation, and in particular relates to a monoclinic phase vanadium dioxide epitaxial film and a preparation method thereof. Background technique [0002] Functional film material is a novel material that has developed rapidly in recent years. According to its function, it can be divided into water treatment film, solar cell film, flat panel display film, optical film, etc. In recent years, due to the rapid development of technologies such as spectral interference, laser and space optics, optical films have received more and more attention from researchers. And the optical film is developing in the direction of integrating light, spot, heat and other functions into one, forming a trend of multi-purpose film. Monoclinic vanadium dioxide thin film is exactly this kind of thin film material with photoelectric conversion characteristics. [0003] Vanadium dioxide is a typical semiconductor-metal ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/02C30B29/16
Inventor 邹崇文陈实樊乐乐吴自玉
Owner UNIV OF SCI & TECH OF CHINA
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