Silicon micro-resonance mode pressure sensor core and manufacturing method
A pressure sensor and resonant technology, applied in the field of sensors, can solve the problems of extremely high flatness of silicon wafers, large residual stress, restrictions; Good stability and long-term stability
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specific Embodiment approach 1
[0051] Specific implementation mode one: the following combination Figure 19 Describe this embodiment, a silicon microresonant pressure sensor core described in this embodiment adopts electrostatic excitation / piezoresistive detection as the working mode, and it includes a lower substrate 1 and an upper substrate 2, a lower substrate 1 and an upper substrate The substrate 2 is bonded as a whole;
[0052] The lower substrate 1 is provided with a resonant beam 1-1, a pressure sensitive diaphragm 1-2, a lower excitation electrode 1-3, a piezoresistor 1-4 and a lower lead pad 1-5; the upper part of the resonant beam 1-1 The surface is provided with the lower excitation electrode 1-3 and the varistor 1-4, and the leads of the lower excitation electrode 1-3 and the varistor 1-4 are drawn out through the lower lead pad 1-5; the pressure sensitive diaphragm 1-2 set at the bottom of the resonant cavity where the resonant beam 1-1 is located;
[0053] The upper substrate 2 is provided...
specific Embodiment approach 2
[0063] Specific implementation mode two: the following combination Figure 1 to Figure 19 Describe this embodiment, the method for making a silicon microresonant pressure sensor core described in Embodiment 1, the method includes the following steps:
[0064] Step 1, making the lower substrate, the specific process is:
[0065] Step 11, select SOI silicon wafer as the lower substrate to be processed, the SOI silicon wafer is provided with an intermediate oxide layer, and the intermediate oxide layer divides the SOI silicon wafer into upper and lower parts,
[0066] performing thermal oxidation treatment on the lower substrate to be treated, forming a silicon dioxide layer on the upper and lower surfaces of the lower substrate to be treated, and obtaining the thermally oxidized lower substrate;
[0067] Step 12, silicon dioxide is patterned by a photolithographic etching process, and then a varistor and its concentrated boron lead, a lower layer excitation electrode and its ri...
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