The application discloses a preparation method of a MEMS sensor and the sensor and belongs to the technical field of sensors. The method comprises the following steps: providing a third
wafer layer, wherein the third
wafer layer is provided with at least one second functional
electrode perpendicular to the third
wafer layer, and a first groove is formed on a surface of the third wafer layer for bonding with a second wafer layer; forming at least one convex support structure in the first groove; and respectively forming a second insulating layer and a third insulating layer on the surface of the third wafer layer and the at least one convex support structure for bonding with the second wafer layer. The convex support structure formed in the first groove can strengthen the structural strength between the second wafer layer and the third wafer layer. Moreover, the third wafer layer is provided with at least one second functional
electrode, so that the space of the third wafer layer can be fully utilized, and the setting requirement of the functional
electrode of the MEMS sensor can be met.