4results about How to "Achieve electrical insulation" patented technology

The utility model relates to a heat dissipation insulating transformer in the field of transformers, which comprises a base, an iron core, a coil and a top plate, a framework is arranged on the outer side of the iron core, the coil is wound on the surface of the framework, the framework is made of ceramics, an insulating shell is arranged on the base, the insulating shell is sleeved on the outer side of the coil, and a bottom cover and a top cover are respectively arranged at two ends of the insulating shell. The insulating shell is filled with epoxy resin, the two ends of the framework make contact with the bottom cover and the top cover respectively, the side walls of the bottom cover and the top cover are connected with a heat dissipation assembly, the heat dissipation assembly comprises a heat conduction plate, heat dissipation fins and a heat dissipation fan, the two ends of the heat conduction plate are connected with the bottom cover and the top cover respectively, and the heat dissipation fan is installed on the surface of the heat conduction plate through a support. A heat dissipation air channel is formed between the heat dissipation fan and the heat conduction plate, the heat dissipation fins are arranged in the heat dissipation air channel, a high-heat-conduction ceramic framework is adopted, and on the basis that the insulation performance is guaranteed, the ceramic framework rapidly conducts heat generated when the coil runs to the bottom cover and the top cover which are in contact with the two ends.

This application discloses a power device and its fabrication method. The power device includes a semiconductor device, a first electrode, a second electrode, a filler structure, and a thermal buffer layer. The semiconductor device includes a first surface and a second surface opposite to each other along its thickness direction. The first surface is provided with a first electrode and a control electrode, and the second surface is provided with a second electrode. The first electrode is in contact with the first electrode. The second electrode is in contact with the second electrode. The filler structure is disposed between the control electrode and the first electrode. The wall surface of the filler structure facing the first electrode is flush with or protrudes from the wall surface of the first electrode facing the first electrode. The filler structure includes a solid insulating element, and the thermal resistance of the solid insulating element is less than or equal to the thermal resistance of air. The thermal buffer layer is sandwiched between the control electrode and the filler structure. The control electrode forms contact with the first electrode at least through the thermal buffer layer and the solid insulating element. The thermal expansion coefficient of the thermal buffer layer is between the thermal expansion coefficient of the control electrode and the thermal expansion coefficient of the solid insulating element.

The application discloses a preparation method of a MEMS sensor and the sensor and belongs to the technical field of sensors. The method comprises the following steps: providing a third wafer layer, wherein the third wafer layer is provided with at least one second functional electrode perpendicular to the third wafer layer, and a first groove is formed on a surface of the third wafer layer for bonding with a second wafer layer; forming at least one convex support structure in the first groove; and respectively forming a second insulating layer and a third insulating layer on the surface of the third wafer layer and the at least one convex support structure for bonding with the second wafer layer. The convex support structure formed in the first groove can strengthen the structural strength between the second wafer layer and the third wafer layer. Moreover, the third wafer layer is provided with at least one second functional electrode, so that the space of the third wafer layer can be fully utilized, and the setting requirement of the functional electrode of the MEMS sensor can be met.

The invention relates to a power transmission module. The power transmission module includes a first busbar and a second busbar disposed opposite the first busbar. The heat dissipation structure is arranged between the two busbars or arranged on the outer sides of the busbars so as to dissipate heat of the busbars. In one embodiment, the heat dissipation structure is arranged between the two busbars, so that a single heat dissipation structure can be used for dissipating heat of the two busbars at the same time, and the cost of the heat dissipation structure is further reduced. In addition, the insulating part can be arranged between the two busbars and / or between the busbars and the heat dissipation structure so as to achieve electrical insulation.