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A kind of annealing method used in sapphire processing

A processing process and technology of sapphire, applied in the field of annealing, can solve the problems of high brittleness of sapphire thin slices, poor processing, limited use range, etc., and achieve the effects of effectively removing product stress, reducing production costs, and achieving considerable economic benefits.

Active Publication Date: 2017-04-12
ZHEJIANG SHANGCHENG SCI&TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, artificially grown sapphire has high brittleness and low impact resistance, which also limits its application range.
The artificially grown crystal has a large stress and has a symmetrical cracking surface. It will shatter on its own after a little knocking, which is not conducive to arbitrary cutting and processing. In order to meet the special needs of optical devices, annealing of the crystal is essential.
[0005] In the current sapphire processing process, some of the commonly used annealing processes are heating and cooling in stages, the temperature control program is complicated and the cycle is lengthy; some of them do not completely remove the stress generated by the gemstone during processing, resulting in poor post-processing. These annealing processes or Is it an increase in production costs or a reduction in the yield of gemstone wafers?

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] An annealing method for sapphire processing, comprising the following steps:

[0024] Step 1, place the sapphire crystal in an annealing furnace, and seal the furnace cavity; vacuumize to remove the air and mixed impurities in the furnace cavity, and continue to fill with high-purity nitrogen for protection, and the nitrogen flow rate is stable at 5L / min;

[0025] In step 2, the temperature is gradually increased for 8 hours to 1450 ° C, and the heating rate is higher than 3 ° C / min. Under this heating rate, the crystal is heated more uniformly and reaches the set temperature.

[0026] Step 3, keep the temperature at 1450°C for 8 hours;

[0027] Step 4, set the temperature to cool slowly, the cooling rate is 1.25℃ / min, and the program sets the temperature to drop from 1450℃ to 250℃ for 16 hours. After reaching 250℃, the program is closed, and the furnace is still continuously filled with nitrogen, and the temperature is lowered to 150℃. Turn off the nitrogen and open t...

Embodiment 2

[0029] The difference from Example 1 is that the nitrogen flow is stable at 6L / min. The applicant has studied and found that when the nitrogen flow rate is 6L / min, the gas turbulence and turbulence are less, and at the same time, the best fluid heating and cooling environment can be provided. Disturbance and turbulent flow phenomena can cause roughness and unevenness on the crystal surface, which is detrimental to stable stress relief.

Embodiment 3

[0031] The difference from Example 1 is that the nitrogen flow is stable at 10L / min. The applicant found that the gas flow rate of 10L / min has faster heating and cooling efficiency, but it will produce turbulent flow and turbulent flow. Only when the volume of the furnace cavity exceeds 300L, the turbulent flow and turbulence phenomenon are small.

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PUM

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Abstract

During sapphire processing, grinding causes relatively large stress, and consequently the angularity of a product is increased and the polishing difficulty is substantially increased. The invention aims at the above disadvantages in the prior art and provides a convenient practical annealing method applied to sapphire processing, and the method is mainly used for sapphire wafers subjected to cutting and grinding. By performing the annealing treatment on the sapphire wafers, the processing stress during cutting and grinding can be effectively removed; and the processing stress of the wafers employing the method for annealing is basically eliminated, the annealing of the wafers is uniform, the angularity of the wafers subjected to annealing is small, and the later-period polishing processing is facilitated.

Description

technical field [0001] The present invention relates to an annealing method used in sapphire processing. [0002] technical background [0003] Sapphire (sapphire) is composed of aluminum oxide (Al2O3), which is composed of three oxygen atoms and two aluminum atoms combined in a covalent bond type, and its crystal structure is a hexagonal lattice structure. It is often used in A-Plane, C-Plane and R-Plane. Due to the wide optical transmission band of sapphire, it has good light transmittance from near-ultraviolet (190nm) to mid-infrared. Therefore, it is widely used in optical components. It has the characteristics of high speed of sound, high temperature resistance, corrosion resistance, high hardness, high light transmittance, and high melting point (2045 ° C), so it is often used as a material for optoelectronic components, but sapphire It is a rather difficult material to process. [0004] Artificially grown sapphire has good wear resistance, and its hardness is second...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/02C30B29/20
Inventor 吴云才
Owner ZHEJIANG SHANGCHENG SCI&TECH