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A high-efficiency thin-film photovoltaic cell

A thin-film photovoltaic cell, high-efficiency technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve problems such as low efficiency and excessively wide band gap of amorphous silicon materials, achieve low process cost, improve light absorption efficiency, reduce silicon the effect of consumption

Active Publication Date: 2017-02-15
ZHENGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

How to further avoid the problems of too wide band gap and low efficiency of amorphous silicon materials is the key to further improving its performance

Method used

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  • A high-efficiency thin-film photovoltaic cell
  • A high-efficiency thin-film photovoltaic cell
  • A high-efficiency thin-film photovoltaic cell

Examples

Experimental program
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Effect test

Embodiment 1

[0036] The schematic diagram of the structure of the high-efficiency thin-film photovoltaic cell in this embodiment is as follows figure 1 As shown, it includes a top electrode layer 1 made of n-type transparent conductive oxide and a back ohmic contact electrode layer 5, and a p-i-n junction layer is arranged between the top electrode layer 1 and the back ohmic contact electrode layer 5, and the p-i-n junction The layers include heavily doped n-type silicon light absorbing layer 2 , magnesium silicide light absorbing layer 3 and heavily doped p-type silicon light absorbing layer 4 . Among them, the top electrode is a commercially available FTO electrode; the heavily doped p-type silicon light absorbing layer 4 is made of heavily doped polysilicon (the doping element is phosphorus), the thickness is 0.05 microns, and the carrier concentration is 5×10 18 cm -3 ; Magnesium silicide photoabsorbing layer 3 adopts intrinsic magnesium silicide, with a thickness of 2 microns and a c...

Embodiment 2

[0045] The high-efficiency thin-film photovoltaic cell in this embodiment includes a top electrode layer and a back ohmic contact electrode layer made of n-type transparent conductive oxide, and an n-i-p junction layer is arranged between the top electrode layer and the back ohmic contact electrode layer. The n-i-p junction layer includes a heavily doped n-type silicon light absorbing layer, a magnesium silicide light absorbing layer and a heavily doped p-type silicon light absorbing layer. Among them, the top electrode layer is a commercially available AZO electrode, and the heavily doped n-type silicon light absorbing layer is made of heavily doped polysilicon (doped with phosphorus), with a thickness of 0.05 microns and a carrier concentration of 5×10 18 cm -3 , the magnesium silicide photoabsorbing layer adopts intrinsic magnesium silicide, the thickness is 2000 nm, and the carrier concentration is 10 17 cm -3 , the heavily doped p-type silicon layer is made of heavily d...

Embodiment 3

[0053] The high-efficiency thin-film photovoltaic cell in this embodiment includes a top electrode layer and a back ohmic contact electrode layer made of n-type transparent conductive oxide, and a p-i-n junction layer is arranged between the top electrode layer and the back ohmic contact electrode layer. The p-i-n junction layer includes a heavily doped p-type amorphous silicon light absorbing layer, a magnesium silicide light absorbing layer and a heavily doped p-type amorphous silicon light absorbing layer. Among them, the top electrode layer adopts commercially available ITO electrodes; the p-type silicon photosensitive absorption layer adopts heavily doped amorphous silicon (doped element boron), with a thickness of 0.05 microns and a carrier concentration of 5×10 20 cm -3 ; The magnesium silicide photoabsorbing layer is made of intrinsic magnesium silicide, with a thickness of 2 microns and a carrier concentration of 10 12 cm -3 ; The n-type silicon light absorbing laye...

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Abstract

The invention discloses an efficient thin-film photovoltaic cell and belongs to the technical field of photovoltaic cells. According to the efficient thin-film photovoltaic cell of the invention, an environmentally-friendly, low-cost and abundant magnesium silicide (Mg2Si) material is adopted to make a light absorbing layer (i) which is arranged in a traditional pn-type silicon-based photovoltaic cell, such that a photovoltaic cell with a wide (p) / narrow(i) / wide (n)-type energy band structure can be formed, and therefore, light absorption efficiency and photoelectric conversion performance can be greatly improved; the Mg2Si is a semiconductor with a face-centered cubic structure and is mainly composed of raw materials of silicon and magnesium which are non-toxic and free of pollution and are elements among the elements having highest storage quantity on the earth, and therefore, the Mg2Si is a kind of environmentally-friendly, low-cost and abundant material; as silicon, the magnesium silicide (Mg2Si) is a kind of semiconductor having an indirect-transition bandgap characteristic, while, the band gap width of the magnesium silicide (Mg2Si) is smaller than that of the silicon (0.7eV), and the light absorption coefficient of the magnesium silicide (Mg2Si) is three orders of magnitude higher than that of the silicon, and therefore, the thickness of the material can be reduced to a level under a micrometer level.

Description

technical field [0001] The invention specifically relates to a high-efficiency thin-film photovoltaic cell, which belongs to the technical field of photovoltaic cells. Background technique [0002] With the increasing environmental pressure and resource shortage, human beings pay more and more attention to clean, efficient and low-cost renewable resources, especially solar energy. At present, the leading devices in the photovoltaic market are mainly silicon-based products. Usually, a substrate with a thickness of hundreds of microns is used to form a single pn junction to realize photovoltaic energy conversion. Common types include pn homojunction, pin homojunction, and pn heterojunction structures. At the pn junction, electrons and holes are separated by a self-built electric field to form a current. Due to the low light absorption coefficient of crystalline silicon, it is difficult for the cell to be less than 200 microns, and the material consumption and cost are high. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L31/075
CPCH01L31/032H01L31/075Y02E10/548
Inventor 邵国胜胡俊华邓泉荣
Owner ZHENGZHOU UNIV
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