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A kind of doped metal oxide semiconductor solar cell and its preparation method

A technology of oxide semiconductors and solar cells, applied in semiconductor devices, circuits, photovoltaic power generation, etc., can solve the problem of fewer polymer and nano-ZnO composite photovoltaic cells, and achieve good application prospects and good photoelectric performance

Active Publication Date: 2016-01-13
GUANGZHOU QIANSHUN IND MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the work in this area mainly focuses on the research on conjugated devices such as inorganic nanocrystals CdSe, CdS, TiO2, etc., while the research on polymer and nano-ZnO composite photovoltaic cells is relatively less

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  • A kind of doped metal oxide semiconductor solar cell and its preparation method
  • A kind of doped metal oxide semiconductor solar cell and its preparation method
  • A kind of doped metal oxide semiconductor solar cell and its preparation method

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specific Embodiment approach

[0033] The following examples are to further illustrate the present invention, rather than limit the present invention. Those skilled in the art can make appropriate changes according to needs from the content disclosed in the description and the claims of this application, and these changes are included in the scope of the present invention.

[0034] figure 1 It is a structural schematic diagram of a doped metal oxide semiconductor solar cell provided by the present invention, and the cell structure includes from top to bottom:

[0035] A transparent conductive glass layer 11 can be ITO (indium tin oxide) glass, FTO (fluorine-doped tin oxide) glass or AZO (Al-doped ZnO) glass.

[0036] A doped ZnO thin film layer 12, the doping element can be one or more of Sn, Cs, Cu, Gr, Cd.

[0037] A polymer light absorbing layer 13, which can be polythiophene or MEH-PPV layer.

[0038] An electron blocking layer 14, which can be MoO 3 layer;

[0039] A metal electrode layer 15 may b...

Embodiment 1

[0044] (1) Add zinc acetate to absolute ethanol to make the concentration of zinc acetate 0.75mol / L, add cesium acetate (the molar ratio of cesium ions to zinc ions is 5:95), add monoethanolamine (the number of moles is cesium ions and zinc ions The sum of moles of ions), heated and stirred in a water bath at 50°C for 1 hour to form a clear and transparent sol;

[0045] (2) UV-treat the cleaned transparent conductive glass for 20 minutes, and spin-coat the prepared sol on the transparent conductive glass. The spin-coating speed of the sol spin-coating is 3000 rpm. Dry for 30min, then heat-treat at 300°C for 3h to obtain a doped ZnO thin film layer, the thickness of the doped ZnO thin film layer is 100nm, the XRD diffraction image of the cesium-doped ZnO thin film layer is as follows figure 2 Shown in curve 21.

[0046] (3) The concentration of P3HT (polythiophene) solution is 1.75% (m / V), that is, each ml of dichlorobenzene contains 17.5mg of P3HT. After stirring the P3HT so...

Embodiment 2

[0050] (1) Add zinc acetate to absolute ethanol to make the concentration of zinc acetate 0.1mol / L, add cesium acetate (the molar ratio of cesium ions to zinc ions is 5:95), add monoethanolamine (the number of moles is cesium ions and zinc ions The sum of moles of ions), heated and stirred in a water bath at 50°C for 1 hour to form a clear and transparent sol;

[0051] (2) UV-treat the cleaned transparent conductive glass for 20 minutes, and spin-coat the prepared sol on the transparent conductive glass. The spin-coating speed of the sol spin-coating is 1000 rpm. Dry for 20min, then heat-treat at 500°C for 2h to obtain a doped ZnO thin film layer, the thickness of the doped ZnO thin film layer is 30nm, the XRD diffraction image of the cesium-doped ZnO thin film layer is as follows figure 2 Shown in curve 22.

[0052] (3) The concentration of P3HT (polythiophene) solution is 1.75% (m / V), that is, each ml of dichlorobenzene contains 17.5mg of P3HT. After stirring the P3HT solu...

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Abstract

The invention discloses a semiconductor solar cell doped with metal oxide and a preparation method of the semiconductor solar cell. The semiconductor solar cell is formed by sequentially stacking a transparent electroconductive glass layer, a doped ZnO thin film layer, a polymer light absorbing layer, an electron blocking layer and a metal electrode layer. The doped ZnO thin film layer is prepared by the following method including: a, adding zinc acetate, metal salt corresponding to doped elements and monoethanolamine into anhydrous ethanol, and performing water-bath heating and stirring to form clear and transparent sol, wherein the doped elements are one or multiple of Sn, Cs, Cu, Gr and Cd; b, subjecting transparent electroconductive glass after being cleaned well to UV processing, rotationally coating the prepared sol on the transparent electroconductive glass, drying at 100-200 DEG C for 10-30 minutes, performing thermal processing at 300-600 DEG C for 1-3h, and obtaining the doped ZnO thin film layer laid on the transparent electroconductive glass. The semiconductor solar cell doped with the metal oxide has good photoelectric performance.

Description

Technical field: [0001] The invention belongs to the field of electronic devices, and in particular relates to a doped metal oxide semiconductor solar cell and a preparation method thereof. Background technique: [0002] At present, the main purpose of domestic and foreign research on the preparation and doping of ZnO thin films is to increase the light transmittance of ZnO thin films to obtain good transparent conductive films and to change their forbidden band width to obtain semiconductor materials with suitable properties. At present, the doping of ZnO materials is mainly are n-type doped and p-type doped. N-type doping is mainly group III elements (such as B, Al, Ga, In, etc.), especially the most research on doping Al. The outermost layer of the main group III element has three electrons, and the divalent ions of Zn are replaced by trivalent ions, and an extra electron appears to become a donor impurity. The extra electrons only need a small amount of energy to get r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0296H01L31/18
CPCH01L31/02963H01L31/07H01L31/1836Y02E10/50Y02P70/50
Inventor 田耕
Owner GUANGZHOU QIANSHUN IND MATERIAL