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Organic light-emitting device and preparation method thereof

An electroluminescent device and a luminescent technology, which are applied in the direction of organic semiconductor devices, the manufacture/processing of organic semiconductor devices, and electric solid-state devices, etc., can solve the problems of low light extraction performance, total reflection loss, and poor refractive index, etc., and achieve light output. high efficiency effect

Inactive Publication Date: 2014-03-26
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Application Information

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Problems solved by technology

[0003] In traditional light-emitting devices, only about 18% of the light inside the device can be emitted to the outside, while the rest will be consumed outside the device in other forms, and there is a difference in refractive index between the interfaces (such as between glass and ITO). The difference between the refractive index, the refractive index of glass is 1.5, ITO is 1.8, the light from ITO reaches the glass, and total reflection will occur), which causes the loss of total reflection, resulting in lower overall light extraction performance

Method used

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  • Organic light-emitting device and preparation method thereof
  • Organic light-emitting device and preparation method thereof
  • Organic light-emitting device and preparation method thereof

Examples

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preparation example Construction

[0034] Please also see figure 2 , the preparation method of the organic electroluminescent device 100 of an embodiment, it comprises the following steps:

[0035] Step S110 , preparing the metal oxide layer 20 on the back surface of the anode 30 by vapor deposition.

[0036] The anode 30 is indium tin oxide glass (ITO), aluminum zinc oxide glass (AZO) or indium zinc oxide glass (IZO), preferably ITO. A conductive layer is formed on one side of the anode 30 , the side on which the conductive layer is formed is the front side, and the side on which the conductive layer is not formed is the back side.

[0037] In this embodiment, the anode 30 is pretreated before the metal oxide layer 20 is vapor-deposited on the back surface of the anode 30 . The pretreatment of the anode 30 is as follows: the anode 30 is first subjected to photolithography treatment, cut into the required size, and then ultrasonically cleaned with detergent, deionized water, acetone, ethanol, and isopropanon...

Embodiment 1

[0053] The structure prepared in this example is TiO 2 / MoO 3 / ITO glass / V 2 o 5 / NPB / ADN / TAZ / Ag organic electroluminescent devices.

[0054] First use detergent, deionized water, and ultrasonic for 15 minutes to remove the organic pollutants on the glass surface, then prepare a scattering layer on the back of the conductive anode substrate (the side in contact with the air), and first evaporate the metal oxide layer , the material is MoO 3 , with a thickness of 25nm, and then spin-coated to prepare a titanium dioxide layer, TiO 2 Firstly, it is calcined at 450 degrees for 30 minutes, and then it is ground into powder and configured into a solution with a mass fraction of 35%, and the solvent is water. Add 5ml of acetylacetone, 2ml of triton, stir well, then spin coat on MoO 3 On top, dried to a thickness of 15 μm. Evaporated hole injection layer: the material is V 2 o 5 , with a thickness of 30nm; evaporated hole transport layer: the material is NPB, with a thickness...

Embodiment 2

[0059] The structure prepared in this example is TiO 2 / CaO / AZO glass / WO 3 / TCTA / Alq 3 / TPBi / Au organic electroluminescent devices.

[0060] Firstly, the AZO glass substrate is washed with detergent, deionized water, and ultrasonic for 15 minutes to remove organic pollutants on the glass surface, and then a scattering layer is prepared on the back of the conductive anode substrate, and a metal oxide layer is prepared by evaporation. The material is CaO, the thickness 10nm, and then spin-coated to prepare a titanium dioxide layer, TiO 2 Firstly, it is calcined at 400 degrees for 60 minutes, and then it is ground into powder and configured into a solution with a mass fraction of 50%, and the solvent is n-butanol. Add 10ml of acetylacetone and 1ml of Triton, stir well, then spin-coat on CaO, then dry, with a thickness of 30μm. Evaporated hole injection layer: the material is WO 3 , with a thickness of 20nm; evaporated hole transport layer: the material is TCTA, with a thickn...

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Abstract

An organic light-emitting device comprises a titanium dioxide layer, a metallic oxide layer, an anode, a hole injection layer, a hole transfer layer, a light emitting layer, an electron transfer layer and a cathode which are sequentially stacked, wherein the anode is made from indium tin oxide glass, aluminum-zinc oxide glass or indium-zinc oxide glass, the metallic oxide layer is made from molybdenum trioxide, tungsten trioxide, calcium oxide or vanadium pentoxide. The luminous efficiency of the organic light-emitting device is relatively high. The invention further provides a preparation method of the organic light-emitting device.

Description

technical field [0001] The invention relates to an organic electroluminescence device and a preparation method thereof. Background technique [0002] The luminescence principle of organic electroluminescent devices is based on the action of an external electric field, electrons are injected from the cathode to the lowest unoccupied molecular orbital (LUMO) of organic matter, and holes are injected from the anode to the highest occupied molecular orbital (HOMO) of organic matter. Electrons and holes meet, recombine, and form excitons in the light-emitting layer. Excitons migrate under the action of an electric field, transfer energy to the light-emitting material, and excite electrons to transition from the ground state to the excited state. The excited state energy is deactivated by radiation to generate photons , releasing light energy. [0003] In traditional light-emitting devices, only about 18% of the light inside the device can be emitted to the outside, while the res...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52H01L51/50H01L51/56
CPCH10K50/81H10K71/00H10K2102/00
Inventor 周明杰王平黄辉陈吉星
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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