Preparation method of solar cell cigs target

A technology of solar cells and targets, applied in the manufacture of circuits, electrical components, final products, etc., can solve the problems of high cost and complicated procedures, and achieve the effect of simple equipment, simple procedures and low energy consumption

Active Publication Date: 2016-01-20
GUANGXI HUAXI GRP CO LTD
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  • Description
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AI Technical Summary

Problems solved by technology

In the known technology, the target material and the target back plate are formed separately, and then the target material and the target back plate are bonded to each other by using soldering, brazing, diffusion bonding or epoxy resin bonding technology; The surface of the target backing plate forms a rough surface. After the target is laminated, the target is heated and melted into the rough surface, so that the target and the target backing plate are combined. However, the target and the target backing plate are formed separately. Finally, the joint technology is used to join the two, not only the joint is strong enough, but also the procedure is complicated and the cost is high

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  • Preparation method of solar cell cigs target

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Embodiment Construction

[0028] Combine below figure 1 Introduce the method of the present invention in detail, it comprises the following steps:

[0029] First, prepare copper indium gallium powder, which can be prepared by dry method: after mixing copper powder and indium powder evenly, heat melting, pressurization, cooling, and grinding under vacuum conditions to obtain copper indium alloy powder; copper powder After mixing evenly with gallium powder, heat-melt, pressurize, cool, and grind under vacuum conditions to obtain copper-gallium alloy powder; in order to achieve the required powder particle size, the above-mentioned process should be carried out several times. It can also be prepared by a wet method: put a certain amount of liquid gallium and polyvinylpyrrolidone in a container, add an appropriate amount of distilled water, disperse the liquid gallium particles under the action of ultrasonic dispersion and mechanical stirring, and cool them rapidly after a period of time. Take nano-galliu...

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Abstract

The invention relates to a CIGS (copper indium gallium selenium) absorbing layer of a solar battery, in particular to a preparation method of a solar battery CIGS target material. The preparation method comprises the following steps: preparing copper indium gallium powder; mixing the copper indium gallium powder and selenium powder to obtain a copper indium gallium selenium mixture; placing the mixture into a steel mould and pressurizing to prepare a green body; igniting the green body and reacting to produce a sintering body; ball-milling and crushing the sintering body to obtain CIGS powder; acid-washing and drying the powder; pressing the dry powder to prepare the CIGS target material. According to the preparation method, the copper indium gallium powder is prepared and then is mixed with the selenium powder, so the problem that high toxicity or explosion may occur due to direct mixing of the selenium and the gallium or indium is solved, and the prepared powder has uniform grain size and provides powerful material basis for producing the high-quality target material. Sintering adopts a manner of igniting the green body, so a continuous external heat source is not required, energy consumption is low, equipment is simple, volatile impurities can be evaporated, and the product has high purity.

Description

technical field [0001] The present invention relates to materials for preparing CIGS absorbing layers of solar cells, in particular to methods for preparing CIGS powders. Background technique [0002] The CIGS absorber layer of thin-film solar cells is the core part of solar cells. There are many methods for preparing the absorber layer. For example, the metal or alloy film is coated with sputtering equipment, and then the metal or alloy film is selenized by selenization to form CIGS. Thin-film light absorbing layer, but its photoelectric conversion efficiency is poor; another example is to use CIGS target with sputtering equipment to directly sputter on the substrate to form CIGS absorbing layer. The absorbing layer made by this method has better photoelectricity The industry actively competes to invest in research and development for conversion efficiency. [0003] There are also many methods for manufacturing CIGS targets, such as co-sputtering method, powder metallurgy ...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): C23C14/34H01L31/18
CPCY02P70/50
Inventor陈进中莫经耀吴伯增林东东甘振英
OwnerGUANGXI HUAXI GRP CO LTD