GaN-based light emitting diode and preparation method thereof

Abstract

The invention discloses a GaN-based light emitting diode and a preparation method thereof. The GaN-based light emitting diode includes an X type GaN layer and an X type electrode arranged on the X type GaN layer; a current obstruction area is formed on the X type GaN layer under the X type electrode; the area of the current obstruction area is smaller than that of the X type electrode; and the X type GaN layer is an N type GaN layer or a P type GaN layer, and the X type electrode corresponding to the X type GaN layer is an N type electrode or a P type electrode. The preparation method uses photoetching and plasma dry etching technology, enables a processed surface to from a high-resistance area, finally achieves the purpose of branching guidance of current, and enables invalid light emission of an LED electrode area is greatly reduced.

Description

Technical field: [0001] The invention belongs to the technical field of gallium nitride-based light-emitting diode manufacturing technology, and specifically relates to a gallium nitride-based light-emitting diode and a preparation method thereof. Background technique: [0002] Light Emitting Diode (LED for short) has been developed for decades, and has been widely used in the fields of signal display, backlight and solid-state lighting, bringing various conveniences to human life. LED devices based on III-V compound gallium nitride (GaN) materials (including various alloy material systems obtained by doping its congeners In and Al elements) can cover most of the wavelength bands from deep ultraviolet to visible light. Most LED devices are manufactured by epitaxial growth to form P-type and N-type layer thin film materials, and grow periodic multilayer materials with different energy band structures between the P-type and N-type layers to form the carrier recombination zone....

AI Technical Summary

Problems solved by technology

This process requires the use of chemical vapor deposition, photolithography, and wet etching to prepare a dielectric material layer with a certain thickness on the surface of gallium nitride under the electrode, such as silicon nitride or silicon oxide; due to the multi-interface characteristics of this position Its surface condition is relatively complicated. If the process is not handled properly, it is easy to cause a series of abnormalities in mass production, such as large-area drop-off of electrodes, and cause irreparable losses.

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