Semiconductor silicon wafer laser annealing online detection method based on photocarrier radio technology

Abstract

The invention relates to a semiconductor silicon wafer laser annealing online detection method based on a photocarrier radio technology. The semiconductor silicon wafer laser annealing online detection method based on the photocarrier radio technology is characterized in that an optical detection system is added to a semiconductor material laser annealing device to achieve real-time online detection of the laser annealing; the optical detection system comprises an intensity periodically modulated stimulation light beam with photon energy larger than forbidden bandwidth of intrinsic semiconductor materials and a photocarrier infrared radiation signal collection device. According to the semiconductor silicon wafer laser annealing online detection method based on the photocarrier radio technology, laser annealing parameters are adjusted in real time due to comparing with photocarrier radiation signal data of reference samples, an expected annealing effect is achieved, and the annealing efficiency of the semiconductor materials is improved.

Description

technical field [0001] The invention relates to an on-line detection method for laser annealing of semiconductor materials, in particular to an on-line detection method for laser annealing of semiconductor silicon wafers based on photocarrier radiation technology. Background technique [0002] With the continuous reduction of the feature size of the semiconductor process, the ultra-shallow junction process has become a hot spot in the research of semiconductor process technology. In order to reduce the diffusion of impurities to meet the requirements of shallow junctions, it is necessary to use a new annealing technology to activate impurities and repair lattice damage. Compared with conventional thermal annealing, excimer laser annealing (S.Do, S.Kong, Y.Lee, J.Oh, J.Lee, M.Ju, S.Jeon and J.Ku, Ultra-shallow Junction Formation Using In the process of Plasma Doping and Excimer Laser Annealing for Nano-technology CMOS Applications, Journal of the Korean Physical Society.55, ...

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Problems solved by technology

[0003] At present, the commonly used annealing detection techniques mainly include electrochemical methods and optical detection methods, among which transmission electron microscopy (TEM: Transmission Electron Microscopy) and secondary ion mass spectrometry (SIMS: Secondary-Ion-Mass Spectrometry) measurement methods are two representative ones. This electrochemical detection method is destructive to the material because it needs to be in contact with the material during the measurement process. At the same time, the measurement process takes a long time and affects production efficiency.

The US patent No. US6656749B1 proposed to monitor the junction depth of the source-drain junction of laser annealed MOS devices online by measuring the change of light reflection coefficient. Since the influence of temperature field and carrier distribution should be considered during the measurement process, the measurement accuracy will be affected.

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