Unlock instant, AI-driven research and patent intelligence for your innovation.

Device and method for producing zone-melting polycrystalline silicon rods through silane process

A technology for polycrystalline silicon rods and production areas, which is applied to the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of high energy consumption, difficult purification, and complicated purification of trichlorosilane, and achieve low energy consumption. , high purity, not easy to silicon crack effect

Inactive Publication Date: 2014-05-14
ZHEJIANG ZHONGNING SILICON IND
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the zone melting polysilicon rods produced by this technology have high purity and no silicon cracks, but because of the complicated purification process of trichlorosilane, the purification is difficult and the energy consumption is very high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device and method for producing zone-melting polycrystalline silicon rods through silane process
  • Device and method for producing zone-melting polycrystalline silicon rods through silane process
  • Device and method for producing zone-melting polycrystalline silicon rods through silane process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] After the silicon core is broken down in the hydrogen atmosphere of the furnace with the silicon core installed, 6N high-purity silane and 6N high-purity hydrogen are mixed in the mixer according to the ratio of the molar concentration of silane to 10%, and the mixed gas passes through a 150°C After the preheater performs preheating and removes boron and phosphorus compound impurities, it enters the reduction furnace with a furnace pressure of 0.6Mpa for thermal decomposition reaction. After the gas reaction is complete, the tail gas comes out of the reduction furnace. After preliminary cooling, analysis, three-stage filtration and compression of the tail gas cooler, the hydrogen silane is separated by a liquid nitrogen separation system at -170°C, and the silane is separated from the bottom of the gas-liquid separation tank. After separation, it re-enters the silane collection system, and the hydrogen is purified by the 4A molecular sieve adsorption tower of aluminum ox...

Embodiment 2

[0026] After the silicon core is broken down in the hydrogen atmosphere of the furnace with the silicon core installed, the 6N high-purity silane and high-purity hydrogen are mixed in the mixer according to the ratio of the molar concentration of silane to 10%. After the heater is preheated and the boron and phosphorus compound impurities are removed, it enters the reduction furnace with a furnace pressure of 0.2Mpa for thermal decomposition reaction. After the gas reaction is complete, the tail gas comes out of the reduction furnace. After preliminary cooling, analysis, three-stage filtration and compression of the tail gas cooler, the hydrogen silane is separated by a liquid nitrogen separation system at -170°C, and the silane is separated from the bottom of the gas-liquid separation tank. After separation, it re-enters the silane collection system, and the hydrogen is purified by an activated carbon adsorption tower and then re-enters the reduction furnace. During the depos...

Embodiment 3

[0028] After the silicon core is broken down in the hydrogen atmosphere of the furnace with the silicon core installed, the 6N high-purity silane and high-purity hydrogen are mixed in the mixer according to the ratio of the molar concentration of silane to 8%. After the heater is preheated and the boron and phosphorus compound impurities are removed, it enters the reduction furnace with a furnace pressure of 0.5Mpa for thermal decomposition reaction. After the gas reaction is complete, the tail gas comes out of the reduction furnace. After preliminary cooling, analysis, three-stage filtration and compression of the tail gas cooler, the hydrogen silane is separated by a liquid nitrogen separation system at -170°C, and the silane is separated from the bottom of the gas-liquid separation tank. After separation, it re-enters the silane collection system, and the hydrogen is purified by an activated carbon adsorption tower and then re-enters the reduction furnace. During the deposi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
electrical resistivityaaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a device and a method for producing zone-melting polycrystalline silicon rods through a silane process. The device comprises a feeding system, a reduction system, a tail gas system and a tail gas cooling system, wherein the feeding system comprises a preheater, a mixer, a hydrogen flowmeter and a silane flowmeter; the reduction system comprises a reduction furnace; the tail gas system comprises a tail gas cooler, a tail gas filter, an analytic system, a coarse filter, a fine filter, a compressor and a compressor outlet filter; the tail gas cooling system comprises a heat exchanger, a liquid nitrogen system cooler, a gas-liquid separator, an adsorption column, a silane heater and a reduction furnace inlet filter. The device can be used for producing the zone-melting polycrystalline silicon rods with the purity above 11N grades in the end; the zone-melting polycrystalline silicon rods have high purity and good compression resistance and abrasion resistance, and silicon cracking is unlikely to occur in the zone-melting polycrystalline silicon rods; the prepared zone-melting polycrystalline silicon rods can be directly used as zone-melting monocrystalline feeding rods; the energy consumption in a technological process is lower than that of the prior art; the products completely meet the operating requirements of integrated circuits and semiconductor industries.

Description

technical field [0001] The invention relates to the application of polycrystalline silicon rods as feed rods in a single crystal silicon regional smelting method, in particular to a device and method for melting polycrystalline silicon rods in a silane method production region. Background technique [0002] Zone melting polysilicon rod is the highest quality product among polysilicon products, and it is a necessity in new energy and high-tech fields. It can be used not only in solar photovoltaic cells but also in high-precision semiconductor devices such as integrated circuits. It has an irreplaceable role. Moreover, the market demand is even greater. The global annual demand is about 10,000 tons, and China accounts for about one-fifth. The annual demand is about 1,500 tons, and the annual demand is growing at a rate of 30%. [0003] As for the production method of zone melting polysilicon rods, at present, the technologies of REC in the United States and Wacker in Germany ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/14C30B29/06
Inventor 陈德伟郑安雄廖敏
Owner ZHEJIANG ZHONGNING SILICON IND