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A kind of preparation method of self-doped strontium titanate ferroelectric thin film

A ferroelectric thin film, strontium titanate technology, applied in the field of functional materials, can solve the problems of high cost, complex synthesis, low phase transition temperature, etc., and achieve the effect of simple method

Inactive Publication Date: 2015-10-07
HENAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to solve the problems of low phase transition temperature, complex synthesis and high cost in the existing methods. The present invention provides a simpler method that can induce strontium titanate ferroelectric A revolutionary method, that is, a method for preparing self-doped strontium titanate ferroelectric thin films

Method used

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  • A kind of preparation method of self-doped strontium titanate ferroelectric thin film
  • A kind of preparation method of self-doped strontium titanate ferroelectric thin film
  • A kind of preparation method of self-doped strontium titanate ferroelectric thin film

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Embodiment 1

[0023] A method for preparing a self-doped strontium titanate ferroelectric thin film, comprising the following steps: step 1, weighing strontium acetate, butyl titanate and acetylacetone respectively at a molar ratio of 1:1.015:0.7, for use;

[0024] Step 2, all the strontium acetate weighed in step 1 is dissolved in acetic acid with a purity of 99.5%, after forming a transparent and colorless solution, an appropriate amount of ethylene glycol methyl ether is added to make the molar concentration of strontium acetate in the solution reach 0.4mol / L, Stir for 1 h to form solution A, add the weighed butyl titanate to solution A, stir for 30 min to form solution B, for use;

[0025] Step 3, add the acetylacetone weighed in step 1 into solution B, then add an appropriate amount of ethylene glycol methyl ether to dilute solution B until the molar concentration of strontium acetate reaches 0.3mol / L, stir for 6 to 8 hours, filter Remove the impurity produced because of fine dust etc....

Embodiment 2

[0030] A method for preparing a self-doping strontium titanate ferroelectric thin film, comprising the following steps: step 1, respectively weighing strontium acetate, butyl titanate and acetylacetone in a molar ratio of 1:1.02:0.7, for use;

[0031] Step 2, all the strontium acetate weighed in step 1 is dissolved in acetic acid with a purity of 99.5%, after forming a transparent and colorless solution, an appropriate amount of ethylene glycol methyl ether is added to make the molar concentration of strontium acetate in the solution reach 0.4mol / L, Stir for 1 h to form solution A, add the weighed butyl titanate to solution A, stir for 30 min to form solution B, for use;

[0032] Step 3, add the acetylacetone weighed in step 1 into solution B, then add an appropriate amount of ethylene glycol methyl ether to dilute solution B until the molar concentration of strontium acetate reaches 0.3mol / L, stir for 6 to 8 hours, filter Remove the impurity produced because of fine dust etc....

Embodiment 3

[0035] A method for preparing a self-doped strontium titanate ferroelectric thin film, comprising the following steps: step 1, weighing strontium acetate, butyl titanate and acetylacetone respectively at a molar ratio of 1:1.017:0.7, for use;

[0036] Step 2, all the strontium acetate weighed in step 1 is dissolved in acetic acid with a purity of 99.5%, after forming a transparent and colorless solution, an appropriate amount of ethylene glycol methyl ether is added to make the molar concentration of strontium acetate in the solution reach 0.4mol / L, Stir for 1 h to form solution A, add the weighed butyl titanate to solution A, stir for 30 min to form solution B, for use;

[0037] Step 3, add the acetylacetone weighed in step 1 into solution B, then add an appropriate amount of ethylene glycol methyl ether to dilute solution B until the molar concentration of strontium acetate reaches 0.3mol / L, stir for 6 to 8 hours, filter Remove the impurity produced because of fine dust etc....

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Abstract

A self-doped strontium titanate ferroelectric film and a preparation method thereof. The self-doped strontium titanate ferroelectric film is composed of a material with a molecular formula of SrTi1+xO3, wherein the value range of x is 0.015-0.02. The preparation method of the film comprises the following steps: weighing strontium acetate, tetrabutyl titanate, and acetylacetone according to a mole ratio of 1:(1.015-1.02):0.7, completely dissolving strontium acetate in acetic acid, then adding ethylene glycol monomethyl ether, tetrabutyl titanate, and acetylacetone, diluting the solution with ethylene glycol monomethyl ether to obtain a mole concentration of strontium acetate of 0.3 mol / L, stirring to obtain a solution C; dropping the solution C on a substrate in a spin coater, performing spin coating, drying and thermolysis till the thickness of the SrTi1+xO3 dry film reaches 300 nm, and performing annealing to obtain the SrTi1+xO3 film. According to the invention, ferroelectricity is induced by excessive Ti and in an anoxic atmosphere, and ferroelectric hysteresis loops are measured at a temperature above zero or even at room temperature; no introduction of other element is necessary, and the method is simple.

Description

technical field [0001] The invention relates to a ferroelectric thin film in the field of functional materials, in particular to a preparation method of a self-doped strontium titanate ferroelectric thin film. Background technique [0002] Quantum paraelectric strontium titanate (SrTiO) 3 ) as a versatile electronic functional material, it has the advantages of high dielectric constant, low dielectric loss and thermal stability, and is widely used in electronics, machinery and ceramics industries. Ferroelectric thin films have good ferroelectricity, piezoelectricity, pyroelectricity and nonlinear optics. Among them, strontium titanate ferroelectric thin films can be widely used in microelectronics, integrated optical information storage and microelectronic mechanical systems and other fields. The study found that strontium titanate is a typical precursor ferroelectric material. When the temperature drops from room temperature to liquid helium temperature, strontium titanat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/47C04B35/622
Inventor 王晓飞胡秋波李新忠张超王赵武
Owner HENAN UNIV OF SCI & TECH