Absorbing layer structure for non-refrigeration long-wave infrared detector
A technology of long-wave infrared and absorbing layers, which is applied in the direction of instruments, measuring devices, scientific instruments, etc., can solve the problems of process incompatibility, difficulty in using line array and area array detectors, short absorption band, etc., and achieve firm adhesion and low specific heat capacity , Strong corrosion resistance
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[0021] Example 1:
[0022] Based on Mn 1.56 Co 0.96 Ni 0.48 O 4 In the thermal film infrared detector, the long-wave infrared absorption layer structure provided by this patent is adopted. Specifically through the following steps.
[0023] (1) Mn 1.56 Co 0.96 Ni 0.48 O 4 Preparation of thermal film
[0024] 1) Using chemical solution method to prepare Mn on amorphous alumina substrate 1.56 Co 0.96 Ni 0.48 O 4 The film has a thickness of approximately 3.5 μm.
[0025] (2) Etching to form electrode structure
[0026] 2) In Mn 1.56 Co 0.96 Ni 0.48 O 4 The surface of the film is patterned by photolithography to form an etching mask.
[0027] 3) Using argon ion / HBr wet etching process to make the photosensitive element of the detector, the area is 0.09mm 2 . Floating glue cleaning.
[0028] 4) Photolithographic patterning on the surface of the film, using dual ion beam sputtering process to deposit 50nm chromium and 200nm gold as the electrodes of the detector. Floating glue cleaning.
[002...
Example Embodiment
[0033] Example 2:
[0034] Based on Mn 1.56 Co 0.96 Ni 0.48 O 4 In the thermal film infrared detector, the long-wave infrared absorption layer structure provided by this patent is adopted. Specifically through the following steps.
[0035] (1) Mn 1.56 Co 0.96 Ni 0.48 O 4 Preparation of thermal film
[0036] 1) Using chemical solution method to prepare Mn on amorphous alumina substrate 1.56 Co 0.96 Ni 0.48 O 4 The film has a thickness of approximately 3.5 μm.
[0037] (2) Etching to form electrode structure
[0038] 2) In Mn 1.56 Co 0.96 Ni 0.48 O 4 The surface of the film is patterned by photolithography to form an etching mask.
[0039] 3) Using argon ion / HBr wet etching process to make the photosensitive element of the detector, the area is 0.09mm 2 . Floating glue cleaning.
[0040] 4) Photolithographic patterning on the surface of the film, using dual ion beam sputtering process to deposit 50nm chromium and 200nm gold as the electrodes of the detector. Floating glue cleaning.
[004...
Example Embodiment
[0045] Example 3:
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